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OZAKI Shunji
Department of Electronics and Infomatics, Mathematics and Physics
Associate Professor
Last Updated :2024/03/28

Researcher Profile and Settings

Researcher

  • Name

    OZAKI Shunji

Profile and Settings

  • Name

    Ozaki, Shunji

Foreign language

  • Use in presentation

    English

  • Use in publication

    English

Affiliation

  • Gunma University, Associate Professor

Education

  • 1998, Osaka University, Graduate School, Division of Engineering
  • 1993, Gunma University, Faculty of Engineering
  • 1998, Osaka University
  • 1993, Gunma University

Degree

  • (BLANK)

Research Experience

  • Gunma University, Associate Professor, Associate prof lecturer lv

Research Activities

Research Areas

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering

Research Interests

  • SEMICONDUCTORS

Published Papers

  • Optical absorption and photoluminescence in defect-stannite-type semiconductor ZnGa2Se4, S. Ozaki and S. Mukada, 2020, Advanced Engineering Forum, 38, 10, 16
  • Growth of Ga2O3 nanowires by a vapor transport method and their optical transmittance spectra, S. Ozaki and Y. Nakahata, 2020, Advanced Engineering Forum, 38, 3, 9
  • Growth of ZnSe nanowires on quartz substrates and their photomodulated transmittance spectra, Ozaki, S. ; Matsumoto, K., 2019, J. Phys. Chem. Solids
  • Growth of ZnSe Nanowires and their Photoluminescence Spectra, Ozaki, S.; Matsumoto, K, 2018, Key Engineering Materials
  • Photoreflectance spectroscopy of the chalcopyrite semiconductor AgInS2 for ordinary and extraordinary rays, Ozaki, S.; Horikoshi, Y., 2016, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    DOI
  • Optical properties and electronic energy-band structure of Cu2ZnSnS4, S. Ozaki, K. Hoshina, and Y. Usami, 2015, Physica Status Solidi C
    DOI
  • Optical constants and electronic energy-band structure of AgGaSe2, Ozaki, Shunji; Hori, Takehito, 2014, JAPANESE JOURNAL OF APPLIED PHYSICS
    DOI
  • Photomodulated transmittance spectroscopy of vacuum-evaporated AgGaTe2 films, Ozaki, Shunji; Ogura, Takayuki, 2014, JAPANESE JOURNAL OF APPLIED PHYSICS
    DOI
  • Positive temperature variation of the bandgap energy in the single-crystalline chalcopyrite semiconductor AgInS2, Ozaki, Shunji; Horikoshi, Yoshimichi, 2014, JOURNAL OF APPLIED PHYSICS
    DOI
  • Growth of large quantity ZnO nanowires and their optical properties, S. Ozaki and K. Morozumi, Dec. 2014, Key Engineering Materials
    DOI
  • Optical absorption and photoreflectance spectroscopy of the single-crystalline chalcopyrite semiconductor AgGaSe2, Hori, Takehito; Ozaki, Shunji, 2013, JOURNAL OF APPLIED PHYSICS
    DOI
  • Growth of SiOx nanowires by simple vapor transport method and their optical properties, Y. Hakamada and S. Ozaki, 2013, Key Engineering Materials
    DOI
  • Optical properties and electronic band structure of Cu2ZnSnSe4 kesterite semiconductor, S. Ozaki and T. Namba, 2012, Physica status solidi (c)
  • Optical properties and electronic band structure of AgGaTe2 chalcopyrite semiconductor, S. Arai, S. Ozaki, and S. Adachi, 2010, Applied Optics
  • Optical properties of single-crystalline chalcopyrite semiconductor AgInSe2, K. Koitabashi, S. Ozaki, and S. Adachi, 2010, J. Appl. Phys.
  • Ellipsometric and thermoreflectance spectroscopy of the defect-chalcopyrite semiconductor CdIn2Te4, Y. Take, S. Ozaki, and S. Adachi, 2007, Phys. Rev. B
  • Temperature dependence of the lowest-direct-bandgap energy in the ternary chalcopyrite semiconductor AgInSe2, S. Ozaki and S. Adachi, 2007, J. Mater. Sci: Mater. Electron
  • Optical properties and electronic energy-band structure of CdIn2Te4, S. Ozaki, Y. Take, and S. Adachi, 2007, J. Mater. Sci: Mater. Electron
  • Optical absorption and photoluminescence in the ternary chalcopyrite semiconductor AgInSe2, ADACHI SADAO, 2006, J. Appl. Phys.
  • Positive temperature variation of the bandgap energy in AgGaSe2, ADACHI SADAO, 2006, Phys. Status Solidi A
  • Optical properties and electronic band structure of AgInSe2, ADACHI SADAO, 2006, Physica Status Solidi A
  • Optical absorption and photoluminescence in the ternary chalcopyrite semiconductor AgInSe2, S. Ozaki and S. Adachi, 2006, J. Appl. Phys.
  • Positive temperature variation of the bandgap energy in AgGaSe2, S. Ozaki, M. Sasaki, and S. Adachi, 2006, Physica status solidi (a)
  • Optical properties and electronic band structure of AgInSe2, S. Ozaki and S. Adachi, 2006, Physica status solidi (a)
  • Photoluminescence and photomodulated transmittance spectroscopy of ZnO nanowires, ADACHI SADAO, 2005, Phys. Status Solidi A
  • Thermoreflectance spectroscopy of CdGa2Te4, ADACHI SADAO, 2005, Phys. Rev. B
  • Optical absorption and emission in the defect-chalcopyrite semiconductor CdGa2Te4, ADACHI SADAO, 2005, J. Appl. Phys.
  • Photoluminescence and photomodulated transmittance spectroscopy of ZnO nanowires, S. Ozaki, T. Tsuchiya, Y. Inokuchi, and S. Adachi, 2005, Physica status solidi (a)
  • Thermoreflectance spectroscopy of CdGa2Te4, M. Sasaki, S. Ozaki, and S. Adachi, 2005, Phys. Rev. B
  • Optical absorption and emission in the defect-chalcopyrite semiconductor CdGa2Te4, S. Ozaki, K. Muto, H. Nagata, and S. Adachi, 2005, J. Appl. Phys.
  • Temperature dependence of electroreflectance spectroscopy in Ga0.5In0.5P alloy, ADACHI SADAO, 2004, Semicond. Sci. Technol.
  • Temperature dependence of electroreflectance spectroscopy in Ga0.5In0.5P alloy, H. Noguchi, S. Ozaki, S. Adachi, and K. Ohtsuka, 2004, Semicond. Sci. Technol.
  • Photoreflectance spectroscopy of ZnO for ordinary and extraordinary rays, ADACHI SADAO, 2003, Jpn. J. Appl. Phys.
  • Optical absorption and photoluminescence in the defect-chalcopyrite-type semiconductor ZnIn2Te4, ADACHI SADAO, 2003, Phys. Rev. B
  • Modeling the optical constants of cubic ZnS in the 0-20 eV spectral region, ADACHI SADAO, 2003, J. Physics: Condensed Matter
  • Optical properties and electronic band structure of CdGa2Te4, ADACHI SADAO, 2003, J. Phys. Chem. Solids
  • Optical absorption and photoluminescence in the defect-chalcopyrite-type semiconductor ZnIn2Te4, S. Ozaki, S. Boku, and S. Adachi, 2003, Phys. Rev. B
  • Modeling the optical constants of cubic ZnS in the 0-20 eV spectral region, T. Tsuchiya, S. Ozaki, and S. Adachi, 2003, J. Physics: Condensed Matter
  • Photoreflectance spectroscopy of ZnO for ordinary and extraordinary rays, S. Ozaki, T. Mishima, and S. Adachi, 2003, Jpn. J. Appl. Phys.
  • Optical properties and electronic band structure of CdGa2Te4, S. Ozaki, K. Muto, and S. Adachi, 2003, J. Phys. Chem. Solids
  • Model dielectric function for amorphous semiconductors, ADACHI SADAO / OZAKI SHUNJI, 2002, Phys. Rev. B
  • Photoreflectance spectroscopy of wurtzite CdS, ADACHI SADAO, 2002, J. Appl. Phys.
  • Photoreflectance study in the E0 and E0+Δ0 transition regions of GaP, ADACHI SADAO, 2002, J. Appl. Phys.
  • Photoreflectance study in the E0 and E0+D0 transition regions of GaP, T. Mishima, M. Miura, S. Ozaki, and S. Adachi, 2002, J. Appl. Phys.
  • Photoreflectance spectroscopy of wurtzite CdS, A. Imada, S. Ozaki, and S. Adachi, 2002, J. Appl. Phys.
  • Optical properties and electronic band structure of ZnI2Te4, ADACHI SADAO, 2001, Phys. Rev. B
  • Optical properties and electronic band structure of ZnIn2Te4, S. Ozaki and S. Adachi, 2001, Phys. Rev. B
  • Optical properties of bulk amorphous semiconductor ZnIn2Te4, ADACHI SADAO, 1999, J. Appl. Phys.
  • Effect of ionized impurities on electron tunneling in GaAs/AlGaAs triple quantum wells, J.H. Park / OZAKI SHUNJI / N. Mori / C. Hamaguchi, 1999, Superlattices and Microstructures
  • Optical properties of bulk amorphous semiconductor ZnIn2Te4, Y. Matsumoto, S. Ozaki, and S. Adachi, 1999, J. Appl. Phys.
  • Observation of resonant optical-phonon assisted tunneling in asymmetric double quantum wells, OZAKI SHUNJI / J.M. Feng / J.H. Park / S. Osako / H. Kubo / M. Morifuji / N. Mori / C. Hamaguchi, 1998, J. Appl. Phys.
  • Photoluminescence Study of Photoexcited Electrons in Asymmetric Double Quantum Wells, J. H. Park / J. M. Feng / OZAKI SHUNJI / N. Mori / C. Hamaguchi, 1997, Technology Reports of Osaka University
  • Optical-phonon assisted tunneling in an asymmetric double-quantum-well structure, J.M. Feng / OZAKI SHUNJI / J.H. Park / H. Kubo / N. Mori / C. Hamaguchi, 1997, Physica Status Solidi (b)
  • Resonant optical-phonon assisted tunneling in an asymmetric double-quantum-well structure, J.M. Feng / J.H. Park / OZAKI SHUNJI / H. Kubo / N. Mori / C. Hamaguchi, 1997, Semicond. Sci. Technol.
  • Wannier-Stark resonances in Zener tunneling diodes with GaAs/AlAs superlattices, K. Murayama / H. Nagasawa / OZAKI SHUNJI / M. Morifuji / C. Hamaguchi / A. Di Carlo / P. Vogl / G. Bohm / G. Weimann, 1996, Superlattices and Microstructures
  • Ellipsometric and thermoreflectance spectra of (AlxGa1-x)0.5In0.5P alloys, ADACHI SADAO, 1996, J. Appl. Phys.
  • Electroreflectance study of (AlxGa1-x)0.5In0.5P alloys, ADACHI SADAO, 1996, Jpn. J. Appl. Phys.
  • Ellipsometric and thermoreflectance spectra of (AlxGa1-x)0.5In0.5P alloys, S. Ozaki, S. Adachi, M. Sato, and K. Ohtsuka, 1996, J. Appl. Phys.
  • Electroreflectance study of (AlxGa1-x)0.5In0.5P alloys, S. Adachi, S. Ozaki, M. Sato, and K. Ohtsuka, 1996, Jpn. J. Appl. Phys.
  • Spectroscopic Ellipsometry and Thermoreflectance of GaAs, ADACHI SADAO, 1995, J. Appl. Phys.
  • Spectroscopic ellipsometry and thermoreflectance of GaAs, S. Ozaki and S. Adachi, 1995, J. Appl. Phys.
  • Optical Constants of Amorphous Ga2Te3 and In2Te3, ADACHI SADAO, 1994, Jpn. J. Appl. Phys.
  • Optical Constants of ZnSxSe1-x Ternary Alloys, ADACHI SADAO, 1994, J. Appl. Phys.
  • Optical Constants of ZnSxSe1-x Ternary Alloys , S. Ozaki and S. Adachi, 1994, J. Appl. Phys.
  • Optical Constants of Amorphous Ga2Te3 and In2Te3, S. Ozaki, K. Takada, and S. Adachi, 1994, Jpn. J. Appl. Phys.
  • Optical constants of amorphous Ga2Se3, ADACHI SADAO, 1993, Jpn. J. Appl. Phys.
  • Optical Constants of ZnSexTe1-x Ternary Alloys, ADACHI SADAO, 1993, Jpn. J. Appl. Phys.
  • Optical constants of cubic ZnS, ADACHI SADAO, 1993, Jpn. J. Appl. Phys.
  • Optical constants of ZnSexTe1-x ternary alloys, S. Ozaki and S. Adachi, 1993, Jpn. J. Appl. Phys.
  • Optical constants of cubic ZnS, S. Ozaki and S. Adachi, 1993, Jpn. J. Appl. Phys.
  • Optical constants of amorphous Ga2Se3, S. Adachi and S. Ozaki, 1993, Jpn. J. Appl. Phys.

MISC

  • Optical properties and electronic energy-band structure of Cu2ZnSnS4, Shunji Ozaki,Keiji Hoshina,Yuji Usami, 2015, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 6, 12, 6, 717, 720
    DOI
  • Optical properties and electronic energy-band structure of Cu2ZnSnS4, Shunji Ozaki,Keiji Hoshina,Yuji Usami, 2015, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 6, 12, 6, 717, 720
    DOI
  • Growth of SiOx Nanowires by Simple Vapor Transport Method and Their Optical Properties, Yuto Hakamada,Shunji Ozaki, 2013, ADVANCED MICRO-DEVICE ENGINEERING III, 534, 141, +
    DOI
  • Growth of SiOx Nanowires by Simple Vapor Transport Method and Their Optical Properties, Yuto Hakamada,Shunji Ozaki, 2013, ADVANCED MICRO-DEVICE ENGINEERING III, 534, 141, +
    DOI
  • Optical absorption and photoreflectance spectroscopy of the single-crystalline chalcopyrite semiconductor AgGaSe2, Takehito Hori,Shunji Ozaki, May 2013, JOURNAL OF APPLIED PHYSICS, 113, 17, 173516
    DOI
  • Optical absorption and photoreflectance spectroscopy of the single-crystalline chalcopyrite semiconductor AgGaSe2, Takehito Hori,Shunji Ozaki, May 2013, JOURNAL OF APPLIED PHYSICS, 113, 17, 173516
    DOI
  • Optical properties and electronic band structure of AgGaTe2 chalcopyrite semiconductor, Shinya Arai,Shunji Ozaki,Sadao Adachi, Feb. 2010, APPLIED OPTICS, 49, 5, 829, 837
    DOI
  • Optical properties and electronic band structure of AgGaTe2 chalcopyrite semiconductor, Shinya Arai,Shunji Ozaki,Sadao Adachi, Feb. 2010, APPLIED OPTICS, 49, 5, 829, 837
    DOI
  • Optical properties of single-crystalline chalcopyrite semiconductor AgInSe2, Keisuke Koitabashi,Shunji Ozaki,Sadao Adachi, Mar. 2010, JOURNAL OF APPLIED PHYSICS, 107, 5, 053516-1-10
    DOI
  • Optical properties of single-crystalline chalcopyrite semiconductor AgInSe2, Keisuke Koitabashi,Shunji Ozaki,Sadao Adachi, Mar. 2010, JOURNAL OF APPLIED PHYSICS, 107, 5, 053516-1-10
    DOI
  • Optical absorption and photoluminescence in the ternary chalcopyrite semiconductor AgInSe2, Shunji Ozaki,Sadao Adachi, Dec. 2006, JOURNAL OF APPLIED PHYSICS, 100, 11, 113526-1-8
    DOI
  • Optical properties and electronic band structure of AgInSe2, Shunji Ozaki,Sadao Adachi, Sep. 2006, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 203, 11, 2919, 2923
    DOI
  • Positive temperature variation of the bandgap energy in AgGaSe2, Shunji Ozaki,Manabu Sasaki,Sadao Adachi, Sep. 2006, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 203, 11, 2648, 2652
    DOI
  • Positive temperature variation of the bandgap energy in AgGaSe2, Shunji Ozaki,Manabu Sasaki,Sadao Adachi, Sep. 2006, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 203, 11, 2648, 2652
    DOI
  • OPTICAL-CONSTANTS OF ZNSXSE1-X TERNARY ALLOYS, S OZAKI,S ADACHI, Jun. 1994, JOURNAL OF APPLIED PHYSICS, 75, 11, 7470, 7475
    DOI
  • OPTICAL-CONSTANTS OF ZNSXSE1-X TERNARY ALLOYS, S OZAKI,S ADACHI, Jun. 1994, JOURNAL OF APPLIED PHYSICS, 75, 11, 7470, 7475
    DOI
  • Ellipsometric and thermoreflectance spectroscopy of the defect-chalcopyrite semiconductor CdIn2Te4, Yoshinari Take,Shunji Ozaki,Sadao Adachi, Jul. 2007, PHYSICAL REVIEW B, 76, 3, 035202
    DOI
  • SPECTROSCOPIC ELLIPSOMETRY AND THERMOREFLECTANCE OF GAAS, S OZAKI,S ADACHI, Sep. 1995, JOURNAL OF APPLIED PHYSICS, 78, 5, 3380, 3386
    DOI
  • Thermoreflectance spectroscopy of CdGa2Te4, M Sasaki,S Ozaki,S Adachi, Jul. 2005, PHYSICAL REVIEW B, 72, 4, 045218-1-6
    DOI
  • Thermoreflectance spectroscopy of CdGa2Te4, M Sasaki,S Ozaki,S Adachi, Jul. 2005, PHYSICAL REVIEW B, 72, 4, 045218-1-6
    DOI
  • Optical absorption and emission in the defect-chalcopyrite semiconductor CdGa2Te4, S Ozaki,KI Muto,H Nagata,S Adachi, Feb. 2005, JOURNAL OF APPLIED PHYSICS, 97, 4, 043507-1-7
    DOI
  • Optical absorption and emission in the defect-chalcopyrite semiconductor CdGa2Te4, S Ozaki,KI Muto,H Nagata,S Adachi, Feb. 2005, JOURNAL OF APPLIED PHYSICS, 97, 4, 043507-1-7
    DOI
  • Optical absorption and emission in the defect-chalcopyrite semiconductor CdGa2Te4, S Ozaki,KI Muto,H Nagata,S Adachi, Feb. 2005, JOURNAL OF APPLIED PHYSICS, 97, 4, 043507-1-7
    DOI
  • Photoluminescence and photomodulated transmittance spectroscopy of ZnO nanowires, S Ozaki,T Tsuchiya,Y Inokuchi,S Adachi, May 2005, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 202, 7, 1325, 1335
    DOI
  • Photoluminescence and photomodulated transmittance spectroscopy of ZnO nanowires, S Ozaki,T Tsuchiya,Y Inokuchi,S Adachi, May 2005, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 202, 7, 1325, 1335
    DOI
  • Optical properties of the bulk amorphous semiconductor ZnIn2Te4, Y Matsumoto,S Ozaki,S Adachi, Oct. 1999, JOURNAL OF APPLIED PHYSICS, 86, 7, 3705, 3708
    DOI
  • Optical properties of the bulk amorphous semiconductor ZnIn2Te4, Y Matsumoto,S Ozaki,S Adachi, Oct. 1999, JOURNAL OF APPLIED PHYSICS, 86, 7, 3705, 3708
    DOI
  • Optical properties and electronic band structure of Cu2ZnSnSe4 kesterite semiconductor, Shunji Ozaki,Toru Namba, 2012, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 12, 9, 12, 2403, 2406
    DOI
  • Photoreflectance spectroscopy of wurtzite CdS, A Imada,S Ozaki,S Adachi, Aug. 2002, JOURNAL OF APPLIED PHYSICS, 92, 4, 1793, 1798
    DOI
  • Photoreflectance spectroscopy of wurtzite CdS, A Imada,S Ozaki,S Adachi, Aug. 2002, JOURNAL OF APPLIED PHYSICS, 92, 4, 1793, 1798
    DOI
  • Photoreflectance study in the E-0 and E-0+Delta(0) transition regions of GaP, T Mishima,M Miura,S Ozaki,S Adachi, Apr. 2002, JOURNAL OF APPLIED PHYSICS, 91, 8, 4904, 4909
    DOI
  • Photoreflectance study in the E-0 and E-0+Delta(0) transition regions of GaP, T Mishima,M Miura,S Ozaki,S Adachi, Apr. 2002, JOURNAL OF APPLIED PHYSICS, 91, 8, 4904, 4909
    DOI
  • Photoreflectance study in the E-0 and E-0+Delta(0) transition regions of GaP, T Mishima,M Miura,S Ozaki,S Adachi, Apr. 2002, JOURNAL OF APPLIED PHYSICS, 91, 8, 4904, 4909
    DOI
  • Optical properties and electronic band structure of CdGa2Te4, S Ozaki,K Muto,S Adachi, Sep. 2003, JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 64, 9-10, 1935, 1939
    DOI
  • Optical properties and electronic band structure of CdGa2Te4, S Ozaki,K Muto,S Adachi, Sep. 2003, JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 64, 9-10, 1935, 1939
    DOI
  • Optical properties and electronic band structure of CdGa2Te4, S Ozaki,K Muto,S Adachi, Sep. 2003, JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 64, 9-10, 1935, 1939
    DOI
  • Modelling the optical constants of cubic ZnS in the 0-20 eV spectral region, T Tsuchiya,S Ozaki,S Adachi, Jun. 2003, JOURNAL OF PHYSICS-CONDENSED MATTER, 15, 22, 3717, 3730
    DOI
  • Modelling the optical constants of cubic ZnS in the 0-20 eV spectral region, T Tsuchiya,S Ozaki,S Adachi, Jun. 2003, JOURNAL OF PHYSICS-CONDENSED MATTER, 15, 22, 3717, 3730
    DOI
  • Photoreflectance spectroscopy of ZnO for ordinary and extraordinary rays, S Ozaki,T Mishima,S Adachi, Sep. 2003, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 42, 9A, 5465, 5471
    DOI
  • Photoreflectance spectroscopy of ZnO for ordinary and extraordinary rays, S Ozaki,T Mishima,S Adachi, Sep. 2003, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 42, 9A, 5465, 5471
    DOI
  • Temperature dependence of electroreflectance spectroscopy in Ga0.5In0.5P alloy, H Noguchi,S Ozaki,S Adachi,K Ohtsuka, Jul. 2004, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19, 7, 807, 812
    DOI
  • Temperature dependence of electroreflectance spectroscopy in Ga0.5In0.5P alloy, H Noguchi,S Ozaki,S Adachi,K Ohtsuka, Jul. 2004, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19, 7, 807, 812
    DOI
  • Temperature dependence of electroreflectance spectroscopy in Ga0.5In0.5P alloy, H Noguchi,S Ozaki,S Adachi,K Ohtsuka, Jul. 2004, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19, 7, 807, 812
    DOI
  • Temperature dependence of electroreflectance spectroscopy in Ga0.5In0.5P alloy, H Noguchi,S Ozaki,S Adachi,K Ohtsuka, Jul. 2004, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19, 7, 807, 812
    DOI
  • Photoreflectance spectroscopy of the chalcopyrite semiconductor AgInS2 for ordinary and extraordinary rays, S. Ozaki,Y. Horikoshi, Jun. 2016, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 122, 6, 628
    DOI
  • Photoreflectance spectroscopy of the chalcopyrite semiconductor AgInS2 for ordinary and extraordinary rays, S. Ozaki,Y. Horikoshi, Jun. 2016, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 122, 6, 628
    DOI
  • Electroreflectance study of (AlxGa1-x)(0.5)In0.5P alloys, S Adachi,S Ozaki,M Sato,K Ohtsuka, Feb. 1996, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 35, 2A, 537, 542
    DOI
  • Electroreflectance study of (AlxGa1-x)(0.5)In0.5P alloys, S Adachi,S Ozaki,M Sato,K Ohtsuka, Feb. 1996, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 35, 2A, 537, 542
    DOI
  • Electroreflectance study of (AlxGa1-x)(0.5)In0.5P alloys, S Adachi,S Ozaki,M Sato,K Ohtsuka, Feb. 1996, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 35, 2A, 537, 542
    DOI
  • Electroreflectance study of (AlxGa1-x)(0.5)In0.5P alloys, S Adachi,S Ozaki,M Sato,K Ohtsuka, Feb. 1996, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 35, 2A, 537, 542
    DOI
  • Ellipsometric and thermoreflectance spectra of (AlxGa1-x)(0.5)In0.5P alloys, S Ozaki,S Adachi,M Sato,K Ohtsuka, Jan. 1996, JOURNAL OF APPLIED PHYSICS, 79, 1, 439, 445
    DOI
  • Ellipsometric and thermoreflectance spectra of (AlxGa1-x)(0.5)In0.5P alloys, S Ozaki,S Adachi,M Sato,K Ohtsuka, Jan. 1996, JOURNAL OF APPLIED PHYSICS, 79, 1, 439, 445
    DOI
  • Ellipsometric and thermoreflectance spectra of (AlxGa1-x)(0.5)In0.5P alloys, S Ozaki,S Adachi,M Sato,K Ohtsuka, Jan. 1996, JOURNAL OF APPLIED PHYSICS, 79, 1, 439, 445
    DOI
  • Ellipsometric and thermoreflectance spectra of (AlxGa1-x)(0.5)In0.5P alloys, S Ozaki,S Adachi,M Sato,K Ohtsuka, Jan. 1996, JOURNAL OF APPLIED PHYSICS, 79, 1, 439, 445
    DOI
  • Optical constants and electronic energy-band structure of AgGaSe2, Shunji Ozaki,Takehito Hori, Jul. 2014, JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 7, 71202
    DOI
  • Optical constants and electronic energy-band structure of AgGaSe2, Shunji Ozaki,Takehito Hori, Jul. 2014, JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 7, 71202
    DOI
  • Positive temperature variation of the bandgap energy in the single-crystalline chalcopyrite semiconductor AgInS2, Shunji Ozaki,Yoshimichi Horikoshi, Feb. 2014, JOURNAL OF APPLIED PHYSICS, 115, 5, 53526
    DOI
  • Positive temperature variation of the bandgap energy in the single-crystalline chalcopyrite semiconductor AgInS2, Shunji Ozaki,Yoshimichi Horikoshi, Feb. 2014, JOURNAL OF APPLIED PHYSICS, 115, 5, 53526
    DOI
  • Photomodulated transmittance spectroscopy of vacuum-evaporated AgGaTe2 films, Shunji Ozaki,Takayuki Ogura, May 2014, JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 5, 05FW02
    DOI
  • Photomodulated transmittance spectroscopy of vacuum-evaporated AgGaTe2 films, Shunji Ozaki,Takayuki Ogura, May 2014, JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 5, 05FW02
    DOI
  • Growth of Large Quantity ZnO Nanowires and Their Optical Properties, Shunji Ozaki,Kouichi Morozumi, 2014, ADVANCED MICRO-DEVICE ENGINEERING IV, 596, 121, 125
    DOI
  • Growth of Large Quantity ZnO Nanowires and Their Optical Properties, Shunji Ozaki,Kouichi Morozumi, 2014, ADVANCED MICRO-DEVICE ENGINEERING IV, 596, 121, 125
    DOI
  • Optical absorption and emission in the defect-chalcopyrite semiconductor CdGa2Te4, ADACHI SADAO, 2005, 97, 043507-1-7
    DOI
  • Photoluminescence and photomodulated transmittance spectroscopy of ZnO nanowires, ADACHI SADAO, 2005, 202, 1325, 1335
    DOI
  • Positive temperature variation of the bandgap energy in AgGaSe2, ADACHI SADAO, 2006, 203, 2648, 2652
    DOI
  • Optical properties and electronic band structure of AgInSe2, ADACHI SADAO, 2006, 203, 2919, 2923
    DOI
  • Model dielectric function for amorphous semiconductors, ADACHI SADAO,OZAKI SHUNJI, 2002, 66, pp. 153201-1-4
  • Optical absorption and photoluminescence in the defect-chalcopyrite-type semiconductor ZnIn2Te4, ADACHI SADAO, 2003, 68, 235201-1-7
  • Photoreflectance spectroscopy of wurtzite CdS, ADACHI SADAO, 2002, 92, 1793, 1798
    DOI
  • Optical absorption and photoluminescence in the ternary chalcopyrite semiconductor AgInSe2, ADACHI SADAO, 2006, 100, 113526-1-8
    DOI
  • Optical properties and electronic band structure of ZnI2Te4, ADACHI SADAO, 2001, 64, 085208-1-7
  • Thermoreflectance spectroscopy of CdGa2Te4, ADACHI SADAO, 2005, 72, 045218-1-6
    DOI
  • Temperature dependence of the lowest-direct-bandgap energy in the ternary chalcopyrite semiconductor AgInSe2, S. Ozaki,S. Adachi, 2007, 18, S25
    DOI
  • Optical properties and electronic energy-band structure of CdIn2Te4, S. Ozaki,Y. Take,S. Adachi, 2007, 18, S347
    DOI
  • Optical constants of amorphous Ga2Se3, ADACHI SADAO, 1993, 32,, 4446, 4448
  • Photoluminescence Study of Photoexcited Electrons in Asymmetric Double Quantum Wells, J. H. Park,J. M. Feng,OZAKI SHUNJI,N. Mori,C. Hamaguchi, 1997, 47, pp.55-60
  • Optical properties of bulk amorphous semiconductor ZnIn2Te4, ADACHI SADAO, 1999, 86, pp.3705-3708
    DOI
  • Effect of ionized impurities on electron tunneling in GaAs/AlGaAs triple quantum wells, J.H. Park,OZAKI SHUNJI,N. Mori,C. Hamaguchi, 1999, 25, pp.445-451
    DOI
  • Observation of resonant optical-phonon assisted tunneling in asymmetric double quantum wells, OZAKI SHUNJI,J.M. Feng,J.H. Park,S. Osako,H. Kubo,M. Morifuji,N. Mori,C. Hamaguchi, 1998, 83, pp.962-965
    DOI
  • Optical-phonon assisted tunneling in an asymmetric double-quantum-well structure, J.M. Feng,OZAKI SHUNJI,J.H. Park,H. Kubo,N. Mori,C. Hamaguchi, 1997, 204, pp.412-415
    DOI
  • Wannier-Stark resonances in Zener tunneling diodes with GaAs/AlAs superlattices, K. Murayama,H. Nagasawa,OZAKI SHUNJI,M. Morifuji,C. Hamaguchi,A. Di Carlo,P. Vogl,G. Bohm,G. Weimann, 1996, 20, pp.493-498
    DOI
  • Optical Constants of ZnSxSe1-x Ternary Alloys, ADACHI SADAO, 1994, 75, 7470, 7475
    DOI
  • Optical constants of cubic ZnS, ADACHI SADAO, 1993, 32, 5008, 5013
    DOI
  • Resonant optical-phonon assisted tunneling in an asymmetric double-quantum-well structure, J.M. Feng,J.H. Park,OZAKI SHUNJI,H. Kubo,N. Mori,C. Hamaguchi, 1997, 12, pp.1116-1120
    DOI
  • Optical Constants of Amorphous Ga2Te3 and In2Te3, ADACHI SADAO, 1994, 33, 6213, 6217
    DOI
  • Optical Constants of ZnSexTe1-x Ternary Alloys, ADACHI SADAO, 1993, 32, 2620, 2625
    DOI
  • Optical absorption and photoluminescence in the ternary chalcopyrite semiconductor AgInSe2, S. Ozaki,S. Adachi, 2006, 100, 113526-1-8
    DOI
  • Optical properties and electronic band structure of AgInSe2, S. Ozaki,S. Adachi, 2006, 203, 2919, 2923
    DOI
  • Photoluminescence and photomodulated transmittance spectroscopy of ZnO nanowires, S. Ozaki,T. Tsuchiya,Y. Inokuchi,S. Adachi, 2005, 202, 1325, 1335
    DOI
  • Optical absorption and photoluminescence in the defect-chalcopyrite-type semiconductor ZnIn2Te4, S. Ozaki,S. Boku,S. Adachi, 2003, 68, 235201-1-7
  • Optical Constants of ZnSxSe1-x Ternary Alloys, S. Ozaki,S. Adachi, 1994, 75, 7470, 7475
    DOI
  • Optical constants of ZnSexTe1-x ternary alloys, S. Ozaki,S. Adachi, 1993, 32, 2620, 2625
    DOI
  • Optical constants of cubic ZnS, S. Ozaki,S. Adachi, 1993, 32, 5008, 5013
    DOI
  • Spectroscopic ellipsometry and thermoreflectance of GaAs, S. Ozaki,S. Adachi, 1995, 78, 3380, 3386
    DOI
  • Optical properties and electronic band structure of CdGa2Te4, S. Ozaki,K. Muto,S. Adachi, 2003, 64, 1935, 1939
    DOI
  • Optical properties and electronic band structure of ZnIn2Te4, S. Ozaki,S. Adachi, 2001, 64, 085208-1-7
  • Optical constants of amorphous Ga2Se3, S. Adachi,S. Ozaki, 1993, 32, 4446, 4448
  • Thermoreflectance spectroscopy of CdGa2Te4, M. Sasaki,S. Ozaki,S. Adachi, 2005, 72, 045218-1-6
    DOI
  • Optical Constants of Amorphous Ga2Te3 and In2Te3, S. Ozaki,K. Takada,S. Adachi, 1994, 33, 6213, 6217
    DOI
  • Photoreflectance study in the E0 and E0+Δ0 transition regions of GaP, ADACHI SADAO, 2002, J. Appl. Phys., 91, 4904, 4909
    DOI
  • Model dielectric function for amorphous semiconductors, ADACHI SADAO,OZAKI SHUNJI, 2002, Phys. Rev. B, 66, pp. 153201-1-4
  • Modeling the optical constants of cubic ZnS in the 0-20 eV spectral region, ADACHI SADAO, 2003, J. Physics: Condensed Matter, 15, 3717, 3730
    DOI
  • Photoreflectance spectroscopy of ZnO for ordinary and extraordinary rays, ADACHI SADAO, 2003, Jpn. J. Appl. Phys., 42, 5465, 5471
    DOI
  • Optical absorption and photoluminescence in the defect-chalcopyrite-type semiconductor ZnIn2Te4, ADACHI SADAO, 2003, Phys. Rev. B, 68, 235201-1-7
  • Optical properties and electronic band structure of ZnI2Te4, ADACHI SADAO, 2001, Phys. Rev. B, 64, 085208-1-7
  • Ellipsometric and thermoreflectance spectroscopy of the defect-chalcopyrite semiconductor CdIn2Te4, Y. Take,S. Ozaki,S. Adachi, 2007, Phys. Rev. B, 76, 035202
    DOI
  • Temperature dependence of the lowest-direct-bandgap energy in the ternary chalcopyrite semiconductor AgInSe2, S. Ozaki,S. Adachi, 2007, J. Mater. Sci: Mater. Electron, 18, S25
    DOI
  • Optical properties and electronic energy-band structure of CdIn2Te4, S. Ozaki,Y. Take,S. Adachi, 2007, J. Mater. Sci: Mater. Electron, 18, S347
    DOI
  • Optical constants of amorphous Ga2Se3, ADACHI SADAO, 1993, Jpn. J. Appl. Phys., 32,, 4446, 4448
  • Photoluminescence Study of Photoexcited Electrons in Asymmetric Double Quantum Wells, J. H. Park,J. M. Feng,OZAKI SHUNJI,N. Mori,C. Hamaguchi, 1997, Technology Reports of Osaka University, 47, pp.55-60
  • Optical properties of bulk amorphous semiconductor ZnIn2Te4, ADACHI SADAO, 1999, J. Appl. Phys., 86, pp.3705-3708
    DOI
  • Effect of ionized impurities on electron tunneling in GaAs/AlGaAs triple quantum wells, J.H. Park,OZAKI SHUNJI,N. Mori,C. Hamaguchi, 1999, Superlattices and Microstructures, 25, pp.445-451
    DOI
  • Observation of resonant optical-phonon assisted tunneling in asymmetric double quantum wells, OZAKI SHUNJI,J.M. Feng,J.H. Park,S. Osako,H. Kubo,M. Morifuji,N. Mori,C. Hamaguchi, 1998, J. Appl. Phys., 83, pp.962-965
    DOI
  • Optical-phonon assisted tunneling in an asymmetric double-quantum-well structure, J.M. Feng,OZAKI SHUNJI,J.H. Park,H. Kubo,N. Mori,C. Hamaguchi, 1997, Physica Status Solidi (b), 204, pp.412-415
    DOI
  • Wannier-Stark resonances in Zener tunneling diodes with GaAs/AlAs superlattices, K. Murayama,H. Nagasawa,OZAKI SHUNJI,M. Morifuji,C. Hamaguchi,A. Di Carlo,P. Vogl,G. Bohm,G. Weimann, 1996, Superlattices and Microstructures, 20, pp.493-498
    DOI
  • Spectroscopic Ellipsometry and Thermoreflectance of GaAs, ADACHI SADAO, 1995, J. Appl. Phys., 78, 3380, 3386
    DOI
  • Optical constants of cubic ZnS, ADACHI SADAO, 1993, Jpn. J. Appl. Phys., 32, 5008, 5013
    DOI
  • Resonant optical-phonon assisted tunneling in an asymmetric double-quantum-well structure, J.M. Feng,J.H. Park,OZAKI SHUNJI,H. Kubo,N. Mori,C. Hamaguchi, 1997, Semicond. Sci. Technol., 12, pp.1116-1120
    DOI
  • Optical Constants of Amorphous Ga2Te3 and In2Te3, ADACHI SADAO, 1994, Jpn. J. Appl. Phys., 33, 6213, 6217
    DOI
  • Optical Constants of ZnSexTe1-x Ternary Alloys, ADACHI SADAO, 1993, Jpn. J. Appl. Phys., 32, 2620, 2625
    DOI
  • Optical properties and electronic band structure of Cu2ZnSnSe4 kesterite semiconductor, S. Ozaki,T. Namba, 2012, Physica status solidi (c), 9, 2403, 2406
  • Optical absorption and photoluminescence in the ternary chalcopyrite semiconductor AgInSe2, S. Ozaki,S. Adachi, 2006, J. Appl. Phys., 100, 113526-1-8
    DOI
  • Positive temperature variation of the bandgap energy in AgGaSe2, S. Ozaki,M. Sasaki,S. Adachi, 2006, Physica status solidi (a), 203, 2648, 2652
    DOI
  • Optical properties and electronic band structure of AgInSe2, S. Ozaki,S. Adachi, 2006, Physica status solidi (a), 203, 2919, 2923
    DOI
  • Optical absorption and photoluminescence in the defect-chalcopyrite-type semiconductor ZnIn2Te4, S. Ozaki,S. Boku,S. Adachi, 2003, Phys. Rev. B, 68, 235201-1-7
  • Modeling the optical constants of cubic ZnS in the 0-20 eV spectral region, T. Tsuchiya,S. Ozaki,S. Adachi, 2003, J. Physics: Condensed Matter, 15, 3717, 3730
    DOI
  • Photoreflectance spectroscopy of ZnO for ordinary and extraordinary rays, S. Ozaki,T. Mishima,S. Adachi, 2003, Jpn. J. Appl. Phys., 42, 5465, 5471
    DOI
  • Optical constants of ZnSexTe1-x ternary alloys, S. Ozaki,S. Adachi, 1993, Jpn. J. Appl. Phys., 32, 2620, 2625
    DOI
  • Optical constants of cubic ZnS, S. Ozaki,S. Adachi, 1993, Jpn. J. Appl. Phys., 32, 5008, 5013
    DOI
  • Spectroscopic ellipsometry and thermoreflectance of GaAs, S. Ozaki,S. Adachi, 1995, J. Appl. Phys., 78, 3380, 3386
    DOI
  • Photoreflectance spectroscopy of wurtzite CdS, A. Imada,S. Ozaki,S. Adachi, 2002, J. Appl. Phys., 92, 1793, 1798
    DOI
  • Optical properties and electronic band structure of ZnIn2Te4, S. Ozaki,S. Adachi, 2001, Phys. Rev. B, 64, 085208-1-7
  • Optical constants of amorphous Ga2Se3, S. Adachi,S. Ozaki, 1993, Jpn. J. Appl. Phys., 32, 4446, 4448
  • Optical Constants of Amorphous Ga2Te3 and In2Te3, S. Ozaki,K. Takada,S. Adachi, 1994, Jpn. J. Appl. Phys., 33, 6213, 6217
    DOI

Books etc

  • ＯＨＭ大学テキスト 量子物理, 2012

Presentations

  • AgIn(SxSe1-x)2半導体混晶の育成とバンドギャップエネルギーの評価, 河野弘希, 尾崎俊二, 第83回応用物理学会秋季学術講演会, 22 Sep. 2022
  • Temperature dependence of the bandgap energy in chalcopyrite semiconductor AgGaxIn1-xS2, Shunji Ozaki and Motoaki Sano, The 15th Asia Pacific Physics Conference (APPC15), 23 Aug. 2022, English, International conference
  • CuxAg1-xInSe2半導体の結晶成長とバンドギャップエネルギーの評価, 牛越勇渡, 尾崎俊二, 第82回応用物理学会秋季学術講演会, 23 Sep. 2021
  • AgGaxIn1-xS2半導体結晶の育成と光学的評価, 佐野元昭, 尾崎俊二, 第82回応用物理学会秋季学術講演会, 23 Sep. 2021
  • ガス輸送気相成長法によるSnO2ナノワイヤーの作製と評価, 潮見侑汰, 尾崎俊二, 第82回応用物理学会秋季学術講演会, 10 Sep. 2021
  • Crystal growth and evaluation of Ga2O3 nanowires, 5th International Symposium of Gunma University Medical Innovation and 9th International Conference on Advanced Micro-Device Engineering, 2018
  • Characterization of Cu2ZnSnS4 bulk crystals grown by spark plasma sintering method, 21th International Conference on Ternary and Multinary Compounds, 2018
  • SPS法によるCu2ZnSnS4バルク結晶の作製と評価Ⅲ, 第81回応用物理学会秋季学術講演会, 2020
  • ZnSナノワイヤーの作製と評価, 第81回応用物理学会秋季学術講演会, 2020
  • CuxAg1−xGaS2半導体結晶の育成とバンドギャップエネルギーの評価, 第81回応用物理学会秋季学術講演会, 2020
  • Cu2GeSe3半導体結晶の育成と評価, 第79回応用物理学会秋季学術講演会, 2018
  • ZnGa2Se4半導体結晶の育成と光学特性, 第79回応用物理学会秋季学術講演会, 2018
  • Ga2O3ナノワイヤーの作製と評価, 第79回応用物理学会秋季学術講演会, 2018
  • SPS法によるCu2ZnSnS4バルク結晶の作製と評価, 第65回応用物理学会春季学術講演会, 2018
  • Optical properties and electronic band structure of CdGa2Te4, 13th International Conference on Ternary and Multinary Compounds, 2002
  • PL and photomodulated absorption spectroscopy of ZnO nanowires, International Workshop on Modulation Spectroscopy of Semiconductor Structures, 2004
  • Positive temperature variation of the bandgap energy in AgGaSe2, 15th International Conference on Ternary and Multinary Compounds, 2006
  • Optical properties and electronic energy-band structure of AgInSe2, 15th International Conference on Ternary and Multinary Compounds, 2006
  • Wannier-Stark states in semiconductor superlattices, Third International Symposium on Nanostructures and Mesoscopic Systems, 1996
  • Evidence for LO phonon assisted tunneling in asymmetric double quantum wells, March Meeting of The American Physical Society, 1997
  • Optical-phonon assisted tunneling in an asymmetric double-quantum-well structure, 10th International Conference on Nonequilibrium Carrier Dynamics in Semiconductor, 1997
  • Effect of ionized impurities on electron tunneling in GaAs/AlGaAs triple quantum wells, 11th International Conference on Superlattices, Microstructures, and Microdevices, 1998
  • Crystal Growth and Optical Properties of AgInSe2 Chalcopyrite Semiconductor, International Conference on Advanced Micro-Device Engineering (AMDE), 2009
  • Optical Properties of Ternary Chalcopyrite Semiconductor AgGaSe2, International Conference on Advanced Micro-Device Engineering (AMDE), 2010
  • Synthesis of SiOx Nanowires by Simple Vapor Transport Method, International Conference on Advanced Micro-Device Engineering (AMDE), 2010
  • Crystal Growth and Optical Properties of Chalcopyrite Semiconductor AgInS2, International Conference on Advanced Micro-Device Engineering (AMDE), 2011
  • Synthesis of SiOx Nanowires by Simple Vapor Transport Method and Optical Properties, International Conference on Advanced Micro-Device Engineering (AMDE), 2011
  • Optical Properties and Electronic Band Structure of Cu2ZnSnSe4, International Conference on Advanced Micro-Device Engineering (AMDE), 2011
  • Growth of ZnO nanowires by simple vapor transport method, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
  • Optical properties of AgGaTe2 films, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
  • Optical properties of chalcopyrite semiconductor AgInS2, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
  • Optical properties and electronic band structure of Cu2ZnSnSe4 kesterite semiconductor, International Conference on Optical and Optoelectronic Properties of Materials and Applications, 2012
  • Optical Properties of Vacuum Evaporated AgGaTe2 Thin Films, 2013 JSAP-MRS Joint Symposia, 2013
  • Crystal Growth and Optical Properties of Chalcopyrite Semiconductor AgGaS2, 5h International Conference on Advanced Micro-Device Engineering (AMDE), 2013
  • Crystal growth and optical properties of Cu2SnSe4 semiconductor, 5h International Conference on Advanced Micro-Device Engineering (AMDE), 2013
  • Crystal Growth and Optical Properties of Cu2ZnSnS4, 5h International Conference on Advanced Micro-Device Engineering (AMDE), 2013
  • Growth of ZnSe nanowires by Simple Vapor Transport Method, 5h International Conference on Advanced Micro-Device Engineering (AMDE), 2013
  • Positive Temperature Variation of the Bandgap Energy in AgInS2 Chalcopyrite Semiconductor, 5h International Conference on Advanced Micro-Device Engineering (AMDE), 2013
  • Optical Properties and Electronic Band Structure of Cu2ZnSnS4, 19th International Conference on Ternary and Multinary Compounds, 2014
  • Crystal growth and optical properties of Cu2ZnSnSe4 semiconductor, 6h International Conference on Advanced Micro-Device Engineering (AMDE), 2014
  • Growth of ZnTe nanowires by simple vapor transport method, 6h International Conference on Advanced Micro-Device Engineering (AMDE), 2014
  • Crystal growth of Cu2ZnSnS4 by vapor transport method, 6h International Conference on Advanced Micro-Device Engineering (AMDE), 2014
  • Growth of ZnSe nanowires and their optical properties, 3rd International Symposium of Gunma University Medical Innovation and 8th International Conference on Advanced Micro-Device Engineering (GUMI&AMDE 2016), 2016
  • アモルファス半導体ZnGa2Te4の光学特性, 第48回応用物理学関係連合講演会, 2001
  • 六方晶ZnOのフォトリフレクタンス測定, 第49回応用物理学関係連合講演会, 2002
  • ZnIn2Te4の光学特性(2), 第49回応用物理学関係連合講演会, 2002
  • CdGa2Te4化合物半導体の光学特性, 第49回応用物理学関係連合講演会, 2002
  • 立方晶ZnSのMDF解析, 第49回応用物理学関係連合講演会, 2002
  • 空孔化合物半導体の光学特性, 平成14年度応用物理学会関西支部セミナー「半導体における量子伝導現象(第1回)」, 2003
  • CdGa2Te4半導体の光学特性(2), 第50回応用物理学関係連合講演会, 2003
  • ZnIn2Te4半導体の光吸収及びフォトルミネッセンス測定, 第51回応用物理学関係連合講演会, 2004
  • CdGa2Te4半導体のサーモリフレクタンススペクトル解析, 第65回応用物理学会学術講演会, 2004
  • CdIn2Te4半導体の光学特性, 第52回応用物理学関係連合講演会, 2005
  • 化合物半導体AgInTe2の光学特性, 第53回応用物理学関係連合講演会, 2006
  • ZnIn2Te4の光学特性とエネルギーバンド構造, 第48回応用物理学関係連合講演会, 2001
  • ZnOナノワイヤーの作製とその光学的評価, 第51回応用物理学関係連合講演会, 2004
  • CdGa2Te4半導体のピエゾリフレクタンススペクトル解析, 第52回応用物理学関係連合講演会, 2005
  • CdIn2Te4半導体におけるサーモリフレクタンススペクトルの温度依存性, 第67回応用物理学会学術講演会, 2006
  • Optical properties and electronic band structure of CdGa2Te4, 13th International Conference on Ternary and Multinary Compounds, 2002
  • PL and photomodulated absorption spectroscopy of ZnO nanowires, International Workshop on Modulation Spectroscopy of Semiconductor Structures, 2004
  • Positive temperature variation of the bandgap energy in AgGaSe2, 15th International Conference on Ternary and Multinary Compounds, 2006
  • Optical properties and electronic energy-band structure of AgInSe2, 15th International Conference on Ternary and Multinary Compounds, 2006
  • GaPのフォトリフレクタンス測定, 第48回応用物理学関係連合講演会, 2001
  • Ga0.5In0.5Pのエレクトロリフレクタンススペクトルの温度依存性, 第49回応用物理学関係連合講演会, 2002
  • 六方晶CdSにおけるフォトリフレクタンススペクトルの温度依存性, 第49回応用物理学関係連合講演会, 2002
  • CdGa2Te4半導体の光学特性(3), 第51回応用物理学関係連合講演会, 2004
  • AgInSe2半導体のバンドギャップエネルギーの異常な温度依存性, 第52回応用物理学関係連合講演会, 2005
  • AgGaTe2半導体の光学特性, 第54回応用物理学関係連合講演会, 2007
  • AgGaTe2半導体のサーモリフレクタンススペクトル解析, 第56回応用物理学関係連合講演会, 2009
  • ZnSe薄膜の光学特性, 第53回応用物理学会学術講演会, 1992
  • ZnSeTeの光学特性, 第40回応用物理学関係連合講演会, 1993
  • ZnSの光学定数, 第54回応用物理学会学術講演会, 1993
  • ZnSxSe1-xの光学定数, 第41回応用物理学関係連合講演会, 1994
  • アルカリ溶液によるGaAs, GaP自然酸化膜の除去, 第55回応用物理学会学術講演会, 1994
  • a-In2Te3, a-Ga2Te3の光学定数, 第55回応用物理学会学術講演会, 1994
  • (AlxGa1-x)0.5In0.5Pのエレクトロリフレクタンス測定, 第42回応用物理学関係連合講演会, 1995
  • GaP, InPのサーモリフレクタンススペクトルのMDF解析, 第42回応用物理学関係連合講演会, 1995
  • (AlxGa1-x)0.5In0.5Pの温度変調反射スペクトルのMDF解析, 第42回応用物理学関係連合講演会, 1995
  • Ga0.5In0.Pのエレクトロリフレクタンス測定, 第56回応用物理学会学術講演会, 1995
  • (GaAs)6/(AlAs)6超格子におけるワニエ・シュタルク効果, 第43回応用物理学関係連合講演会, 1996
  • 非対称二重量子井戸におけるルミネッセンスの電界効果, 第57回応用物理学会学術講演会, 1996
  • 非対称二重量子井戸における共鳴フォノントンネリング, 平成8年度重点領域研究「量子位相エレクトロニクス」, 第8回定期研究会, 量子構造の形成と物性, 1996
  • 非対称二重量子井戸における非平衡LOフォノンの観測, 第44回応用物理学関係連合講演会, 1997
  • CO2レーザ照射時の非対称2重量子井戸構造におけるホットキャリア効果, 第58回応用物理学会学術講演会, 1997
  • 超格子におけるミニバンド状態からワニエ・シュタルク状態への遷移, 第45回応用物理学関係連合講演会, 1998
  • ZnIn2Te4の光学特性, 第60回応用物理学会学術講演会, 1999
  • Wannier-Stark states in semiconductor superlattices, Third International Symposium on Nanostructures and Mesoscopic Systems, 1996
  • Evidence for LO phonon assisted tunneling in asymmetric double quantum wells, March Meeting of The American Physical Society, 1997
  • Optical-phonon assisted tunneling in an asymmetric double-quantum-well structure, 10th International Conference on Nonequilibrium Carrier Dynamics in Semiconductor, 1997
  • Effect of ionized impurities on electron tunneling in GaAs/AlGaAs triple quantum wells, 11th International Conference on Superlattices, Microstructures, and Microdevices, 1998
  • AgGaTe2半導体の光学定数, 第55回応用物理学関係連合講演会, 2008
  • AgInSe2半導体の光学特性, 第69回応用物理学会学術講演会, 2008
  • Cu2GeSe3半導体のバンドギャップエネルギーの特異な温度依存特性, 第69回応用物理学会学術講演会, 2008
  • ガス輸送気相成長法によるSiOxナノワイヤーの作製と光学特性, 第69回応用物理学会学術講演会, 2008
  • 気相成長法によるZnGa2O4ナノワイヤーの作製と光学的評価, 第69回応用物理学会学術講演会, 2008
  • AgGaSe2半導体の光学特性, 第70回応用物理学会学術講演会, 2009
  • ガス輸送気相成長法によるZn2SnO4ナノワイヤーの作製と光学的評価, 第70回応用物理学会学術講演会, 2009
  • Crystal Growth and Optical Properties of AgInSe2 Chalcopyrite Semiconductor, International Conference on Advanced Micro-Device Engineering (AMDE), 2009
  • Optical Properties of Ternary Chalcopyrite Semiconductor AgGaSe2, International Conference on Advanced Micro-Device Engineering (AMDE), 2010
  • Synthesis of SiOx Nanowires by Simple Vapor Transport Method, International Conference on Advanced Micro-Device Engineering (AMDE), 2010
  • Crystal Growth and Optical Properties of Chalcopyrite Semiconductor AgInS2, International Conference on Advanced Micro-Device Engineering (AMDE), 2011
  • Synthesis of SiOx Nanowires by Simple Vapor Transport Method and Optical Properties, International Conference on Advanced Micro-Device Engineering (AMDE), 2011
  • Optical Properties and Electronic Band Structure of Cu2ZnSnSe4, International Conference on Advanced Micro-Device Engineering (AMDE), 2011
  • ガス輸送気相成長法によるZnSeナノワイヤーの作製と光学特性, 第58回応用物理学関係連合講演会, 2011
  • AgInS2半導体結晶の育成と光学特性, 第73回応用物理学会学術講演会, 2012
  • ガス輸送気相成長法によるZnSeナノ結晶の作製, 第60回応用物理学会春季学術講演会, 2013
  • Growth of ZnO nanowires by simple vapor transport method, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
  • Optical properties of AgGaTe2 films, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
  • Optical properties of chalcopyrite semiconductor AgInS2, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
  • AgGaS2半導体のバンドギャップエネルギーの特異な温度依存性, 第60回応用物理学会春季学術講演会, 2013
  • Optical properties and electronic band structure of Cu2ZnSnSe4 kesterite semiconductor, International Conference on Optical and Optoelectronic Properties of Materials and Applications, 2012
  • Cu2ZnSnS4半導体結晶の育成と光学特性及びバンド構造評価, 第60回応用物理学会春季学術講演会, 2013
  • ガス輸送気相成長法によるZnTeナノ結晶の作製と光学特性, 第74回応用物理学会秋季学術講演会, 2013
  • CuxAg1-xInS2半導体結晶の育成と評価, 第76回応用物理学会秋季学術講演会, 2015
  • Optical Properties of Vacuum Evaporated AgGaTe2 Thin Films, 2013 JSAP-MRS Joint Symposia, 2013
  • Crystal Growth and Optical Properties of Chalcopyrite Semiconductor AgGaS2, 5h International Conference on Advanced Micro-Device Engineering (AMDE), 2013
  • Crystal growth and optical properties of Cu2SnSe4 semiconductor, 5h International Conference on Advanced Micro-Device Engineering (AMDE), 2013
  • Crystal Growth and Optical Properties of Cu2ZnSnS4, 5h International Conference on Advanced Micro-Device Engineering (AMDE), 2013
  • Growth of ZnSe nanowires by Simple Vapor Transport Method, 5h International Conference on Advanced Micro-Device Engineering (AMDE), 2013
  • Positive Temperature Variation of the Bandgap Energy in AgInS2 Chalcopyrite Semiconductor, 5h International Conference on Advanced Micro-Device Engineering (AMDE), 2013
  • Optical Properties and Electronic Band Structure of Cu2ZnSnS4, 19th International Conference on Ternary and Multinary Compounds, 2014
  • Crystal growth and optical properties of Cu2ZnSnSe4 semiconductor, 6h International Conference on Advanced Micro-Device Engineering (AMDE), 2014
  • Growth of ZnTe nanowires by simple vapor transport method, 6h International Conference on Advanced Micro-Device Engineering (AMDE), 2014
  • Crystal growth of Cu2ZnSnS4 by vapor transport method, 6h International Conference on Advanced Micro-Device Engineering (AMDE), 2014
  • AgInS2半導体バンドギャップエネルギーの正の温度変化, 第61回応用物理学会春季学術講演会, 2014
  • Growth of ZnSe nanowires and their optical properties, 3rd International Symposium of Gunma University Medical Innovation and 8th International Conference on Advanced Micro-Device Engineering (GUMI&AMDE 2016), 2016
  • ZnIn2Se4半導体結晶の育成と光学特性, 第77回応用物理学会秋季学術講演会, 2016
  • AgGaS2半導体結晶の育成と光学的異方性, 第77回応用物理学会秋季学術講演会, 2016
  • Cu2ZnSnS4半導体バルク結晶の育成とバンド構造評価, 第78回応用物理学会秋季学術講演会, 2017
  • ZnIn2S4半導体結晶の育成と光学特性, 第78回応用物理学会秋季学術講演会, 2017
  • ガス輸送気相成長法によるZnSeナノワイヤーの作製と評価, 第63回応用物理学会春季学術講演会, 2016

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