Researcher Profile and Settings

Researcher

• Name

  YIN You

Affiliation

• Department of Electronics and Infomatics，Mathematics and Physics, Professor

Profile and Settings

• Name

  Yin, You

• Profile

  You Yin is a professor at the Division of Electronics and Informatics of Gunma University (Oct. 2021-current). He received his M.S. degree from Dalian University of Technology (China) in 2000, and his Ph. D. degree from Shanghai Jiao Tong University (China) in 2003. Afterwards, he was a post-doctoral researcher in Satellite Venture Business Laboratory, Gunma University, Japan. He was a special researcher in Nano-Material Systems Department, Gunma University after 2006. Since 2008, He has been an assistant professor at the Department of Production Science & Technology (Nov. 2008-Mar. 2013) and the Division of Electronics and Informatics of Gunma University (Apr. 2013-Oct. 2018) and an associate professor at the Division of Electronics and Informatics of Gunma University (Nov. 2018-Sep. 2021). His current research interests are (1) Micro/nano-electronic devices: Synaptic devices, Phase-change memory (PCM), Resistive random access memory (RRAM), Quantum dot solar cells; (2) Nano-fabrication: Electron beam lithography, Self assembly; (3) Nano-metrology: Scanning probe microscopy, Atomic force microscopy, Scanning tunneling microscopy.

Alternate Names

• You Yin,尹 友
• You Yin
• 尹 友

ホームページ

• URI

  http://yinlab.ei.st.gunma-u.ac.jp/index.html, Yin lab's Homepage

• URI

  http://yinlab.ei.st.gunma-u.ac.jp/Jin.html

Affiliation

• Gunma University, Graduate School of Science and Technology, Associate Professor
• Gunma University, Graduate School of Science and Technology, Professor

Affiliation

• Affiliation

  Graduate School of Science and Technology

• Job title

  Associate Professor

Education

• May 2003, Shanghai Jiao Tong University, Doctor, Completion, Abroad

Degree

• PhD
• PhD
• PhD
• PhD, Shanghai Jiao Tong University

Association Memberships

• THE JAPAN SOCIETY OF APPLIED PHYSICS
• 2013 5th International Conference on Mechanical and Electrical Technology (ICMET 2013)

Research Experience

• 01 Oct. 2021, 9999, Professor, Prof lv
• Nov. 2008, Mar. 2013, Gunma University Division of Electronics and Informatics, Faculty of Science and Technology, Assistant Professor, Assistant prof lv
• Nov. 2018, Sep. 2021, Gunma University, Gunma University, Division of Electronics and Informatics, Faculty of Science and Technology, Associate professor, Associate prof lecturer lv
• Apr. 2013, Oct. 2018, Gunma University, Graduate School of Science and Technology, Department of Electronics and Infomatics, Mathematics and Physics, Assistant professor, Assistant prof lv
• Apr. 2006, Oct. 2008, Gunma University, Researcher postdoc lv
• Jul. 2003, Mar. 2006, Gunma University, Researcher postdoc lv
• Oct. 2021, 9999, Gunma University Division of Electronics and Informatics, Faculty of Science and Technology, Professor, Prof lv

Research Activities

Research Areas

• Nanotechnology/Materials, Nanomaterials
• Nanotechnology/Materials, Applied materials
• Nanotechnology/Materials, Crystal engineering
• Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering
• Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment

Research Themes

• Advanced nano-device, Advanced materials, Nonvolatile memory, Multi-level storage, Solar cell, Nano-fabrication and so on, Micro/Nanodevice, 0103 (Japanese Only)

Published Papers

• Electromagnetic Analysis of Antenna Used for Optical Rectenna, K. Yanagisawa, T. Akahane, and Y. Yin, 2021, Journal of Mechanical and Electrical Intelligent System
• Proposal of a Novel Operation Method to Precisely Control Synaptic Strength for Phase-Change Artificial Synapse, Y. Yin, 2021, Journal of Mechanical and Electrical Intelligent System
• Nanofabrication for Quantum dot solar Cell with High Conversion Efficiency, Y. Yin, 2021, Journal of Mechanical and Electrical Intelligent System, 4, 36, 41
• Winner-Takes-All mechanism realized by memristive neural network, J. J. Wang; Q. Yu; S. G. Hu; Yanchen Liu; Rui Guo; T. P. Chen; Y. Yin; Y. Liu, 09 Dec. 2019, Applied Physics Letters, 115, 24, Scientific journal

  DOI
• Extremely small proximity effect in 30keV electron beam drawing with thin calixarene resist for 20 x 20 nm(2) pitch dot arrays, Sumio Hosaka; Zulfakri Mohamad; Masumi Shira; Hirotaka Sano; You Yin; Akihira Miyachi; Hayato Sone, Feb. 2008, APPLIED PHYSICS EXPRESS, 1, 2, 027003 1-3, Scientific journal

  DOI
• Ultramultiple-level storage in TiN/SbTeN double-layer cell for high-density nonvolatile memory, You Yin; Naoya Higano; Hayato Sone; Sumio Hosaka, Apr. 2008, APPLIED PHYSICS LETTERS, 92, 16, 163509 1-3, Scientific journal

  DOI
• Multilevel storage in lateral top-heater phase-change memory, You Yin; Kazuhiro Ota; Naoya Higano; Hayato Sone; Sumio Hosaka, Aug. 2008, IEEE ELECTRON DEVICE LETTERS, 29, 8, 876, 878, Scientific journal

  DOI
• Nano-dot and -pit arrays with a pitch of 25 nm x 25 nm fabricated by EB drawing, RIE and nano-imprinting for 1 Tb/in(2) storage, Sumio Hosaka; Zulfakri Mohamad; Masumi Shirai; Hirotaka Sano; You Yin; Akihira Miyachi; Hayato Sone, May 2008, MICROELECTRONIC ENGINEERING, 85, 5-6, 774, 777, Scientific journal

  DOI
• Associative memory realized by a reconfigurable memristive Hopfield neural network, S. G. Hu; Y. Liu; Z. Liu; T. P. Chen; J. J. Wang; Q. Yu; L. J. Deng; Y. Yin; Sumio Hosaka, Jun. 2015, NATURE COMMUNICATIONS, 6, 7522, Scientific journal

  DOI
• Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current, You Yin; Tao Wang, Jul. 2015, IEEE TRANSACTIONS ON ELECTRON DEVICES, 62, 7, 2184, 2189, Scientific journal

  DOI
• The effect of h-BN buffer layers in bilayer graphene on Co (111), Can Li; Yan Liu; Bin Zhang; Tao Wang; Qing Guo; Kuang Sheng; You Yin, May 2015, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 66, 10, 1631, 1636, Scientific journal

  DOI
• Oxygen-doped Sb2Te3 for high-performance phase-change memory, You Yin; Shota Morioka; Shun Kozaki; Ryoya Satoh; Sumio Hosaka, Sep. 2015, APPLIED SURFACE SCIENCE, 349, 230, 234, Scientific journal

  DOI
• Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-Change Nanostructures with an Extremely Low Switching Current, Woon Ik Park; Jong Min Kim; Jae Won Jeong; Yoon Hyoung Hur; Young Joong Choi; Se-Hun Kwon; Seungbum Hong; You Yin; Yeon Sik Jung; Kwang Ho Kim, Apr. 2015, CHEMISTRY OF MATERIALS, 27, 7, 2673, 2677, Scientific journal

  DOI
• Bandgap engineering of monolayer MoS2 under strain: A DFT study, Can Li; Bowen Fan; Weiyi Li; Luowei Wen; Yan Liu; Tao Wang; Kuang Sheng; You Yin, Jun. 2015, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 66, 11, 1789, 1793, Scientific journal

  DOI
• Tunable bandgap of monolayer black phosphorus by using vertical electric field: A DFT study, Tao Wang; Yan Liu; Qing Guo; Bin Zhang; Kuang Sheng; Can Li; You Yin, Mar. 2015, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 66, 6, 1031, 1034, Scientific journal

  DOI
• Flexible One Diode-One Phase Change Memory Array Enabled by Block Copolymer Self-Assembly, Beom Ho Mun; Byoung Kuk You; Se Ryeun Yang; Hyeon Gyun Yoo; Jong Min Kim; Woon Ik Park; You Yin; Myunghwan Byun; Yeon Sik Jung; Keon Jae Lee, Apr. 2015, ACS NANO, 9, 4, 4120, 4128, Scientific journal

  DOI
• Material engineering in phase-change memory for low power consumption and multi-level storage, You Yin; Tomoyuki Noguchi; Hiroki Ohno; Sumio Hosaka, 2009, 2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009), 449, 452, International conference proceedings

  DOI
• Multilevel Storage in N-Doped Sb2Te3-Based Lateral Phase Change Memory with an Additional Top TiN Layer, You Yin; Kazuhiro Ota; Tomoyuki Noguchi; Hiroki Ohno; Hayato Sone; Sumio Hosaka, Apr. 2009, JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 4, 04C063 1-5, Scientific journal

  DOI
• Nano magnetic column arrays fabrication for patterned media in magnetic recording using EB lithography and ion milling, Sumio Hosaka; Yasunari Tanaka; Masumi Shirai; Zulfakri Mohamad; You Yin; Yuji Kondo; Jun Ariake, 2009, 2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009), 140, +, International conference proceedings

  DOI
• Programming margin enlargement by material engineering for multilevel storage in phase-change memory, You Yin; Tomoyuki Noguchi; Hiroki Ohno; Sumio Hosaka, Sep. 2009, APPLIED PHYSICS LETTERS, 95, 13, 133503 1-3, Scientific journal

  DOI
• Simulation of Fine Resist Profile Formation by Electron Beam Drawing and Development with Solubility Rate Based on Energy Deposition Distribution, Hui Zhang; Takuya Komori; Yulong Zhang; You Yin; Sumio Hosaka, Dec. 2013, JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 12, 126504, Scientific journal

  DOI
• A Novel Phase-Change Memory with a Separate Heater Characterized by Constant Resistance for Multilevel Storage, Rosalena Irma Alip; Ryota Kobayashi; Yu Long Zhang; Zulfakri Mohamad; You Yin; Sumio Hosaka, 2013, ADVANCED MICRO-DEVICE ENGINEERING III, 534, 136, 140, International conference proceedings

  DOI
• Improved Observation Contrast of Block-Copolymer Nanodot Pattern Using Carbon Hard Mask (CHM), Takashi Akahane; Takuya Komori; Jing Liu; Miftakhul Huda; Zulfakri Bin Mohamad; You Yin; Sumio Hosaka, 2013, ADVANCED MICRO-DEVICE ENGINEERING III, 534, 126, +, International conference proceedings

  DOI
• Effect of Salty Development on Forming HSQ Resist Nanodot Arrays with a Pitch of 15x15 nm(2) by 30-keV Electron Beam lithography, Takuya Komori; Hui Zhang; Takashi Akahane; Zulfakri Mohamad; You Yin; Sumio Hosaka, 2013, ADVANCED MICRO-DEVICE ENGINEERING III, 534, 113, +, International conference proceedings

  DOI
• Volume-change-free GeTeN films for high-performance phase-change memory, You Yin; Hui Zhang; Sumio Hosaka; Yang Liu; Qi Yu, Dec. 2013, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 46, 50, 505311, Scientific journal

  DOI
• Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media, Zulfakri Mohamad; Rosalena Irma Alip; Takuya Komori; Takashi Akahane; Hui Zhang; Miftakhul Huda; You Yin; Sumio Hosaka, 2013, ADVANCED MICRO-DEVICE ENGINEERING III, 534, 118, +, International conference proceedings

  DOI
• Multi-Level Storage in Lateral Phase-Change Memory: from 3 to 16 Resistance Levels, You Yin; Rosalena Irma Alip; Yulong Zhang; Ryota Kobayashi; Sumio Hosaka, 2013, ADVANCED MICRO-DEVICE ENGINEERING III, 534, 131, +, International conference proceedings

  DOI
• Design of an electronic synapse with spike time dependent plasticity based on resistive memory device, S. G. Hu; H. T. Wu; Y. Liu; T. P. Chen; Z. Liu; Q. Yu; Y. Yin; Sumio Hosaka, Mar. 2013, JOURNAL OF APPLIED PHYSICS, 113, 11, 114502, Scientific journal

  DOI
• Piezoresistive Acceleration Sensor with High Sensitivity and High Responsiveness, Shintaro Kurokami; Zulfakri Mohamad; You Yin; Sumio Hosaka; Takahiro Fuju; Yoshiharu Sueyoshi; Haruki Okano, 2013, ADVANCED MICRO-DEVICE ENGINEERING III, 534, 169, +, International conference proceedings

  DOI
• Possibility of Forming 18-nm-Pitch Ultrahigh Density Fine Dot Arrays for 2 Tbit/in.(2) Patterned Media Using 30-keV Electron Beam Lithography, Sumio Hosaka; Yasunari Tanaka; Masumi Shirai; Zulfakri Mohamad; You Yin, 2010, JAPANESE JOURNAL OF APPLIED PHYSICS, 49, 4, 046503 1-3, Scientific journal

  DOI
• Observation of Si Pattern Sidewall Using Inclination Atomic Force Microscope for Evaluation of Line Edge Roughness, Sumio Hosaka; Hirokazu Koyabu; Masamichi Noro; Katsuyuki Takizawa; Hayato Sone; You Yin, Jul. 2010, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 10, 7, 4522, 4527, Scientific journal

  DOI
• Memory effect in metal-chalcogenide-metal structures for ultrahigh-density nonvolatile memories, Y Yin; H Sone; S Hosaka, Jun. 2006, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45, 6A, 4951, 4954, Scientific journal

  DOI
• Electrical properties of phase change and channel current control in ultrathin phase-change channel transistor memory by annealing, Y Yin; A Miyachi; D Niida; H Sone; S Hosaka, Apr. 2006, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45, 4B, 3238, 3242, Scientific journal

  DOI
• Simulation of proposed confined-chalcogenide phase-change random access memory for low reset current by finite element modelling, You Yin; Hayato Sone; Sumio Hosaka, Aug. 2006, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45, 8A, 6177, 6181, Scientific journal

  DOI
• A novel lateral phase-change random access memory characterized by ultra low RESET current and power consumption, You Yin; Akihira Miyachi; Daisuke Niida; Hayato Sone; Sumio Hosaka, Jul. 2006, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 45, 24-28, L726, L729, Scientific journal

  DOI
• Finite element analysis of dependence of programming characteristics of phase-change memory on material properties of chalcogenides, You Yin; Hayato Sone; Surnio Hosaka, Nov. 2006, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45, 11, 8600, 8603, Scientific journal

  DOI
• In situ SEM observation of grain formation and growth induced by electrical pulses in lateral Ge(2)Sb(2)Tes phase-change memory, You Yin; Daisuke Niida; Kazuhiro Ohta; Akihira Miyachi; Masahiro Asai; Naoya Higano; Hayato Sone; Sumio Hosaka, 2007, MATERIALS AND PROCESSES FOR NONVOLATILE MEMORIES II, 997, 331, +, International conference proceedings
• Nano-dot arrays with a bit pitch and a track pitch of 25 nm formed by EB writing for 1 Tb/in(2) storage, Sumio Hosaka; Hirotaka Sano; Masumi Shirai; You Yin; Hayato Sone, May 2007, MICROELECTRONIC ENGINEERING, 84, 5-8, 802, 805, Scientific journal

  DOI
• Characteristics of N-doped Sb2Te3 films by X-ray diffraction and resistance measurement for phase-change memory, You Yin; Naoya Higano; Kazuhiro Ohta; Akihira Miyachi; Masahiro Asai; Daisuke Niida; Hayato Sone; Sumio Hosaka, 2007, MATERIALS AND PROCESSES FOR NONVOLATILE MEMORIES II, 997, 287, +, International conference proceedings
• Prototypical lateral multi-state phase-change memory with a multi-layer medium, Y. Yin; N. Higano; K. Ota; H. Sone; S. Hosaka, 2007, EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS, 149, 152, International conference proceedings

  DOI
• Prototype of phase-change channel transistor for both nonvolatile memory and current control, Sumio Hosaka; Kunihiro Miyauchi; Takuro Tamura; You Yin; Hayato Sone, Mar. 2007, IEEE TRANSACTIONS ON ELECTRON DEVICES, 54, 3, 517, 523, Scientific journal

  DOI
• Lateral SbTeN based multi-layer phase change memory for multi-state storage, You Yin; Hayato Sone; Sumio Hosaka, Dec. 2007, MICROELECTRONIC ENGINEERING, 84, 12, 2901, 2906, Scientific journal

  DOI
• Scanning electron microscope for in situ study of crystallization of Ge(2)Sb(2)Te(5) in phase-change memory, You Yin; Daisuke Niida; Kazuhiro Ota; Hayato Sone; Sumio Hosaka, Dec. 2007, REVIEW OF SCIENTIFIC INSTRUMENTS, 78, 12, 126101 1-3, Scientific journal

  DOI
• Characterization of nitrogen-doped Sb2Te3 films and their application to phase-change memory, You Yin; Hayato Sone; Sumio Hosaka, Sep. 2007, JOURNAL OF APPLIED PHYSICS, 102, 6, Scientific journal

  DOI
• A chalcogenide-based device with potential for multi-state storage, You Yin; Hayato Sone; Sumio Hosaka, Jun. 2007, MICROELECTRONICS JOURNAL, 38, 6-7, 695, 699, Scientific journal

  DOI
• Thickness dependences of phase change and channel current control in phase-change channel transistor, Y. Yin; A. Miyachi; D. Niida; H. Sone; S. Hosaka, 2005, 2005 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, PROCEEDINGS, 617, 620, International conference proceedings

  DOI
• Dependences of electrical properties of thin GeSbTe and AgInSbTe films on annealing, Y Yin; H Sone; S Hosaka, Aug. 2005, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44, 8, 6208, 6212, Scientific journal

  DOI
• Low-Reset-Current Ring-Confined-Chalcogenide Phase Change Memory, You Yin; Sumio Hosaka, Oct. 2012, JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 10, 104202 1-5, Scientific journal

  DOI
• Controlled promotion of crystallization for application to multilevel phase-change memory, You Yin; Sumio Hosaka, Jun. 2012, APPLIED PHYSICS LETTERS, 100, 25, 253503 1-4, Scientific journal

  DOI
• Formation of 12-nm Nanodot Pattern by Block Copolymer Self-Assembly Technique, Miftakhul Huda; Takuro Tamura; You Yin; Sumio Hosaka, 2012, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING II, 497, 122, 126, International conference proceedings

  DOI
• Controllable Crystallization in Phase-Change Memory for Low-Power Multilevel Storage, You Yin; Sumio Hosaka, Jun. 2012, JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 6, 064101 1-4, Scientific journal

  DOI
• Material Engineering for Low Power Consumption and Multi-Level Storage in Lateral Phase-Change Memory, You Yin; Rosalena Irma Alip; Yulong Zhang; Sumio Hosaka, 2012, MECHATRONICS AND INTELLIGENT MATERIALS II, PTS 1-6, 490-495, 3286, 3290, International conference proceedings

  DOI
• Estimation of Nanometer-sized EB patterning using Energy deposition distribution in Monte Carlo Simulation, Hui Zhang; Takuro Tamura; You Yin; Sumio Hosaka, 2012, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING II, 497, 127, +, International conference proceedings

  DOI
• Coercive force enhanced by nanometer-sizing of magnetic column and measured by X-ray magnetic circular dichroism (XMCD), Sumio Hosaka; Zulfakri Mohamad; Takashi Akahane; You Yin; Hiroshi Sakurai; Yuji Kondo; Jun Ariake; Naoki Honda; Motohiro Suzuki, 2012, MECHATRONICS AND INTELLIGENT MATERIALS II, PTS 1-6, 490-495, 292, +, International conference proceedings

  DOI
• Pico-Newton controlled step-in mode NC-AFM using a quadrature frequency demodulator and a slim probe in air for CD-AFM, Sumio Hosaka; Takayuki Takizawa; Daisuke Terauchi; You Yin; Hayato Sone, 2012, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING II, 497, 95, 100, International conference proceedings

  DOI
• Influence of Phase-Change Materials and Additional Layer on Performance of Lateral Phase-Change Memories, You Yin; Sumio Hosaka, 2012, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING II, 497, 106, 110, International conference proceedings

  DOI
• Fabrication of 5-nm-Sized Nanodots Using Self-Assembly of Polystyrene-Poly(dimethylsiloxane), Miftakhul Huda; Jing Liu; You Yin; Sumio Hosaka, Jun. 2012, JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 6, Scientific journal

  DOI
• Electron Beam Lithography of 15 x 15 nm(2) Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer, Takuya Komori; Hui Zhang; Takashi Akahane; Zulfakri Mohamad; You Yin; Sumio Hosaka, Jun. 2012, JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 6, Scientific journal

  DOI
• Guide Pattern Functionalization for Regularly Arranged PS-PDMS Self-Assembled Nanodot Pattern by Brush Treatment, Takashi Akahane; Miftakhul Huda; Takuro Tamura; You Yin; Sumio Hosaka, 2012, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING II, 497, 116, 121, International conference proceedings

  DOI
• Random-Access Multilevel Storage in Phase-Change Memory by Staircase-Like Pulse Programming, Ryota Kobayashi; Tomoyuki Noguchi; You Yin; Sumio Hosaka, 2012, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING II, 497, 111, 115, International conference proceedings

  DOI
• Crystal Growth Suppression by N-Doping into Chalcogenide for Application to Next-Generation Phase-Change Memory, You Yin; Sumio Hosaka, 2012, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING II, 497, 101, 105, International conference proceedings

  DOI
• Fabrication of high-density In3Sb1Te2 phase change nanoarray on glass-fabric reinforced flexible substrate, Jong Moon Yoon; Dong Ok Shin; You Yin; Hyeon Kook Seo; Daewoon Kim; Yong In Kim; Jung Ho Jin; Yong Tae Kim; Byeong-Soo Bae; Sang Ouk Kim; Jeong Yong Lee, Jun. 2012, NANOTECHNOLOGY, 23, 25, 255301 1-9, Scientific journal

  DOI
• Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory, Jong Moon Yoon; Hu Young Jeong; Sung Hoon Hong; You Yin; Hyoung Seok Moon; Seong-Jun Jeong; Jun Hee Han; Yong In Kim; Yong Tae Kim; Heon Lee; Sang Ouk Kim; Jeong Yong Lee, 2012, JOURNAL OF MATERIALS CHEMISTRY, 22, 4, 1347, 1351, Scientific journal

  DOI
• Realization of transient memory-loss with NiO-based resistive switching device, S. G. Hu; Y. Liu; T. P. Chen; Z. Liu; Q. Yu; L. J. Deng; Y. Yin; Sumio Hosaka, Nov. 2012, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 109, 2, 349, 352, Scientific journal

  DOI
• Estimation of pattern resolution using NaCl high-contrast developer by Monte Carlo simulation of electron beam lithography, Hui Zhang; Miftakhul Huda; Takuya Komori; Yulong Zhang; You Yin; Sumio Hosaka, Jun. 2014, MICROELECTRONIC ENGINEERING, 121, 142, 146, Scientific journal

  DOI
• Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation, Hui Zhang; YuLong Zhang; Sumio Hosaka; You Yin, May 2013, American Journal of Nanoscience and Nanotechnology, 1, 11, 16, Scientific journal

  DOI
• Coercive Force Reduced by Nanometer-sized Dot Pitch in CoPt Magnetic Dot Arrays for Patterned Media Measured by Micro X-Ray Magnetic Circular Dichroism, Zulfakri Bin Mohamad; Takashi Akahane; Takuya Komori; Hui Zhang; Rosalena Irma Alip; Motohiro Suzuki; M. Takagi; Naomi Kawamura; You Yin; Sumio Hosaka, 2012, Jurnal Teknologi, 59, SUPPL.3, 37, 39, Scientific journal
• Scanning tunneling microscopy and in situ spectroscopy of ultra thin Ti films and nano sized TiOx dots induced by STM, Y Yin; JF Jiang; QY Cai; BC Cai, Oct. 2002, APPLIED SURFACE SCIENCE, 199, 1-4, 319, 327, Scientific journal

  DOI
• Coulomb blockade in an ultrathin Ti nanowire at room temperature, Y Yin; JF Jiang; QY Cai; T Yang; BC Cai, Jul. 2003, CHINESE JOURNAL OF ELECTRONICS, 12, 3, 451, 453, Scientific journal
• The dependence of crystallization on temperature in the nanosecond timescale for GeTe-based fast phase-change resistor, Hui Zhang; Yulong Zhang; You Yin; Sumio Hosaka, Apr. 2016, CHEMICAL PHYSICS LETTERS, 650, 102, 106, Scientific journal

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• Sub 10 ns fast switching and resistance control in lateral GeTe-based phase-change memory, You Yin; Yulong Zhang; Yousuke Takehana; Ryota Kobayashi; Hui Zhang; Sumio Hosaka, Jun. 2016, JAPANESE JOURNAL OF APPLIED PHYSICS, 55, 6, 06GG07, Scientific journal

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• Ultra-multiple and reproducible resistance levels based on intrinsic crystallization properties of Ge1Sb4Te7 film, You Yin; Shota Iwashita; Sumio Hosaka; Tao Wang; Jingze Li; Yang Liu; Qi Yu, Apr. 2016, APPLIED SURFACE SCIENCE, 369, 348, 353, Scientific journal

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• Formation of 13-nm-Pitch Block Copolymer Self-Assembled Nanodots Pattern for High-Density Magnetic Recording, Miftakhul Huda; You Yin; Sumio Hosaka, 2011, 4TH NANOSCIENCE AND NANOTECHNOLOGY SYMPOSIUM (NNS2011): AN INTERNATIONAL SYMPOSIUM, 1415, 79, 82, International conference proceedings

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• Long-range-ordering of self-assembled block copolymer nanodots using EB-drawn guide line and post mixing template, Sumio Hosaka; Takashi Akahane; Miftakhul Huda; Takuro Tamura; You Yin; Naoko Kihara; Yoshiyuki Kamata; Akira Kitsutsu, Aug. 2011, MICROELECTRONIC ENGINEERING, 88, 8, 2571, 2575, Scientific journal

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• Self-Assembled Nanodot Fabrication by Using Diblock Copolymer, Miftakhul Huda; You Yin; Sumio Hosaka, 2011, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING I, 459, 120, +, International conference proceedings

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• Fabrication of 10-nm-Order Block Copolymer Self-Assembled Nanodots for High-Density Magnetic Recording, Miftakhul Huda; Takashi Akahane; Takuro Tamura; You Yin; Sumio Hosaka, Jun. 2011, JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 6, 06GG04 1-4, Scientific journal

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• Fabrication of Nanometer Sized Si Dot Arrays Using Ar Ion Milling with Calixarene Resist Dot Arrays, Takuro Tamura; Yasunari Tanaka; Takashi Akahane; You Yin; Sumio Hosaka, 2011, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING I, 459, 116, +, International conference proceedings

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• Large Resistance Ratio for High Reliability of Multi-Level Storage in Phase-Change Memory, You Yin; Tomoyuki Noguchi; Hiroki Ohno; Sumio Hosaka, 2011, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING I, 459, 140, 144, International conference proceedings

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• Guide Pattern for Long-Range-Order Nanofabrication of Self-Assembled Block Copolymers, Takashi Akahane; Miftakhul Huda; You Yin; Sumio Hosaka, 2011, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING I, 459, 124, +, International conference proceedings

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• Possibility of Freely Achievable Multilevel Storage of Phase-Change Memory by Staircase-Shaped Pulse Programming, You Yin; Tomoyuki Noguchi; Sumio Hosaka, Oct. 2011, JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 10, Scientific journal

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• Orientation-Controlled and Long-Range-Ordered Self-Assembled Nanodot Array for Ultrahigh-Density Bit-Patterned Media, Takashi Akahane; Miftakhul Huda; Takuro Tamura; You Yin; Sumio Hosaka, Jun. 2011, JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 6, 06GG06 1-5, Scientific journal

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• Multilevel storage in lateral phase-change memory by promotion of nanocrystallization, You Yin; Sumio Hosaka, Aug. 2011, MICROELECTRONIC ENGINEERING, 88, 8, 2794, 2796, Scientific journal

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• Nanometer resolution stress measurement of the Si gate using illumination-collection-type scanning near-field Raman spectroscopy with a completely metal-inside-coated pyramidal probe, Sumio Hosaka; Yusuke Aramomi; Hayato Sone; You Yin; Eiji Sato; Kenji Tochigi, Jan. 2011, NANOTECHNOLOGY, 22, 2, 025206, Scientific journal

  DOI
• Prototype of illumination-collection mode scanning near-field optical microscopy and Raman spectroscopy with gold inner-coated aperture-less pyramidal probe, Sumio Hosaka; Hirokazu Koyabu; Yusuke Aramomi; Hayato Sone; You Yin; Eiji Sato; Kenji Tochigi, 2011, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING I, 459, 129, +, International conference proceedings

  DOI
• Long-range-ordering of Nanodot Arrays Using Self-assembly and Post and Line Mixing Templates, Sumio Hosaka; Takashi Akahane; Miftakhul Huda; Takuya Komori; You Yin, 2011, 4TH NANOSCIENCE AND NANOTECHNOLOGY SYMPOSIUM (NNS2011): AN INTERNATIONAL SYMPOSIUM, 1415, 102, 106, International conference proceedings

  DOI
• Proposed Phase-Change Memory with a Step-Like Channel for High-Performance Multi-State Storage, You Yin; Sumio Hosaka, 2011, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING I, 459, 145, 150, International conference proceedings

  DOI
• Recrystallization process controlled by staircase pulse in phase change memory, You Yin; Ryota Kobayashi; Sumio Hosaka, Jan. 2014, MICROELECTRONIC ENGINEERING, 113, 61, 65, Scientific journal

  DOI
• Fabrication of 25-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Drawing, RIE and Ion-Milling, Zulfakri Mohamad; Miftakhul Huda; Takuya Komori; Rosalena Irma Alip; Hui Zhang; You Yin; Sumio Hosaka, 2014, ADVANCED MICRO-DEVICE ENGINEERING IV, 596, 92, +, International conference proceedings

  DOI
• Fabrication of CoPt Nanodot Array with a Pitch of 33 nm Using Pattern-Transfer Technique of PS-PDMS Self-Assembly, Miftakhul Huda; Zulfakri Bin Mohamad; Takuya Komori; You Yin; Sumio Hosaka, 2014, ADVANCED MICRO-DEVICE ENGINEERING IV, 596, 83, +, International conference proceedings

  DOI
• Attempts to form the 10-nm-order pitch of self-assembled nanodots using PS-PDMS block copolymer, Miftakhul Huda; Jing Liu; Zulfakri Bin Mohamad; You Yin; Sumio Hosaka, 2014, INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 11, 5-8, 425, 433, Scientific journal

  DOI
• Ordering of 6-nm-sized nanodot arrays with 10-nm-pitch using self-assembled block copolymers along electron beam-drawn guide-lines, Sumio Hosaka; Takashi Akahane; Miftakhul Huda; Takuya Komori; Hui Zhang; You Yin, Jul. 2014, MICROELECTRONIC ENGINEERING, 123, 54, 57, Scientific journal

  DOI
• Controlling of 6 nm Sized and 10 nm Pitched Dot Arrays Ordered along Narrow Guide Lines Using PS-PDMS Self-Assembly, Sumio Hosaka; Takashi Akahane; Miftakhul Huda; Hui Zhang; You Yin, May 2014, ACS APPLIED MATERIALS & INTERFACES, 6, 9, 6208, 6211, Scientific journal

  DOI
• Controlled Crystallization Process of Phase-change Memory device by a Separate Heater Structure, Rosalena Irma Alip; Zulfakri Mohamad; You Yin; Sumio Hosaka, 2014, ADVANCED MICRO-DEVICE ENGINEERING IV, 596, 107, 110, International conference proceedings

  DOI
• Reconstruction of atomic force microscope image using estimated tip shape from impulse response technique, Yasuhiko Harada; Hayato Sone; You Yin; Sumio Hosaka, 2014, ADVANCED MICRO-DEVICE ENGINEERING IV, 596, 147, 151, International conference proceedings

  DOI
• Ordering of Self-Assembled Nanodots Improved by Guide Pattern with Low Line Edge Roughness for 5 Tbit/in.(2) Patterned Media, Takuya Komori; Miftakhul Huda; Takashi Akahane; Muneyasu Masuda; Jing Liu; Zulfakri Bin Mohamad; You Yin; Sumio Hosaka, 2014, ADVANCED MICRO-DEVICE ENGINEERING IV, 596, 78, 82, International conference proceedings

  DOI
• Estimation of HSQ Resist Profile by Using High Contrast Developement Model for High Resolution EB Lithography, Hui Zhang; Takuya Komori; Jing Liu; Yulong Zhang; Zulfakri Mohamad; You Yin; Sumio Hosaka, 2014, ADVANCED MICRO-DEVICE ENGINEERING IV, 596, 97, 100, International conference proceedings

  DOI
• Ordering of self-assembled 5-nm-diameter poly(dimethylsiloxane) nanodots with sub-10nm pitch using ultra-narrow electron-beam-drawn guide lines and three-dimensional control, Hui Zhang; Sumio Hosaka; You Yin, Mar. 2014, APPLIED PHYSICS LETTERS, 104, 9, 93107, Scientific journal

  DOI
• Effect of a separate heater structure for crystallisation to enable multilevel storage phase-change memory, Rosalena Irma Alip; Zulfakri Mohamad; You Yin; Sumio Hosaka, 2014, INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 11, 5-8, 389, 395, Scientific journal

  DOI
• Synaptic long-term potentiation realized in Pavlov's dog model based on a NiOx-based memristor, S. G. Hu; Y. Liu; Z. Liu; T. P. Chen; Q. Yu; L. J. Deng; Y. Yin; Sumio Hosaka, Dec. 2014, JOURNAL OF APPLIED PHYSICS, 116, 21, 214502, Scientific journal

  DOI
• Fabrication of 6-nm-sized nanodot arrays with 12 nm-pitch along guide lines using both self-assembling and electron beam-drawing for 5 Tbit/in(2) magnetic recording, Sumio Hosaka; Takashi Akahane; Miftakhul Huda; Takuya Komori; Hui Zhang; You Yin, 2014, ADVANCED MICRO-DEVICE ENGINEERING IV, 596, 73, +, International conference proceedings

  DOI
• Electron Beam Lithography for Fabrication of Nano Phase-change Memory, You Yin; Taichi Itagawa; Sumio Hosaka, 2014, QUANTUM, NANO, MICRO TECHNOLOGIES AND APPLIED RESEARCHES, 481, 30, 35, International conference proceedings

  DOI
• Fabrication of Carbon Nanodot Arrays with a Pitch of 20 nm for Pattern-Transfer of PDMS Self-Assembled Nanodots, Jing Liu; Miftakhul Huda; Zulfakri Bin Mohamad; Hui Zhang; You Yin; Sumio Hosaka, 2014, ADVANCED MICRO-DEVICE ENGINEERING IV, 596, 88, 91, International conference proceedings

  DOI
• Scanning Near Field Circular Polarization Optical Microscope for Measuring Magnetic Nanodot Arrays, Tao Jin; Lu Shen; Sumio Hosaka; You Yin; Takeshi Miura; Wenmei Hou, Jan. 2017, SCIENCE OF ADVANCED MATERIALS, 9, 1, 151, 155, Scientific journal

  DOI
• First-principles calculation of photocurrent in monolayer silicene sheet under small voltages, Tao Wang; Minyan Chen; Bowen Fan; Yan Liu; Kuang Sheng; You Yin; Yiqun Xie, 15 Jul. 2017, Optics Communications, 395, 289, 292, Scientific journal

  DOI
• Ab initio Study of Tunable Band Gap of Monolayer and Bilayer Phosphorene by the Vertical Electronic Field, Wang Tao; Guo Wei; Wen Luowei; Liu Yan; Zhang Bin; Sheng Kuang; Yin You, Feb. 2017, JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION, 32, 1, 213, 216, Scientific journal

  DOI
• Predicting House Price with a Memristor-Based Artificial Neural Network, J. J. Wang; S. G. Hu; X. T. Zhan; Q. Luo; Q. Yu; Zhen Liu; T. P. Chen; Y. Yin; Sumio Hosaka; Y. Liu, 08 Mar. 2018, IEEE Access, 6, 16523, 16528, Scientific journal

  DOI
• γ-Ray Radiation Effects on an HfO2-Based Resistive Memory Device, Shaogang Hu; Yang Liu; Tupei Chen; Qi Guo; Yu Dong Li; Xing Yao Zhang; L. J. Deng; Qi Yu; You Yin; Sumio Hosaka, Jan. 2018, IEEE Transactions on Nanotechnology, 17, 1, 61, 64, Scientific journal

  DOI
• The phosphorene under the external electronic field and strain, Tao Wang; Yan Liu; Wen Wen; Wei Guo; You Yin, 01 Dec. 2017, International Journal of Modern Physics C, 28, 12, 1750131, Scientific journal

  DOI
• Current density enhancement nano-contact phase-change memory for low writing current, You Yin; Sumio Hosaka; Woon Ik Park; Yeon Sik Jung; Keon Jae Lee; Byoung Kuk You; Yang Liu; Qi Yu, 15 Jul. 2013, Applied Physics Letters, 103, 3, 33116, Scientific journal

  DOI
• Emulating the Ebbinghaus forgetting curve of the human brain with a NiO-based memristor, S. G. Hu; Y. Liu; T. P. Chen; Z. Liu; Q. Yu; L. J. Deng; Y. Yin; Sumio Hosaka, 23 Sep. 2013, Applied Physics Letters, 103, 13, 133701, Scientific journal

  DOI
• Self-assembled incorporation of modulated block copolymer nanostructures in phase-change memory for switching power reduction, Woon Ik Park; Byoung Kuk You; Beom Ho Mun; Hyeon Kook Seo; Jeong Yong Lee; Sumio Hosaka; You Yin; C. A. Ross; Keon Jae Lee; Yeon Sik Jung, 26 Mar. 2013, ACS Nano, 7, 3, 2651, 2658, Scientific journal

  DOI
• Step-in mode NC-AFM using a quadrature frequency demodulator for observing high-aspect ratio structures in air, Sumio Hosaka; Daisuke Terauchi; Takayuki Takizawa; You Yin; Hayato Sone, 30 Mar. 2011, e-Journal of Surface Science and Nanotechnology, 9, 122, 125, Scientific journal

  DOI
• Phase-change materials and memory devices for IoT application, You Yin, 01 Jul. 2017, Proceedings of International Conference on ASIC, 2017-October, ASICON, 422, 425, International conference proceedings

  DOI
• Reactively sputtered Ti-Si-N films for application as heating layers for low-current phase-change memory, You Yin; Tomoyuki Noguchi; Kazuhiro Ota; Naoya Higano; Hayato Sone; Sumio Hosaka, 2009, Journal of Physics: Conference Series, 152, 012026 1-6, Scientific journal

  DOI
• Estimation of nano-sized pattern of calixarene and ZEP-520 resists by using EDD in Monte Carlo simulation, H. Zhang; T. Komori; Z. Mohamad; Y. Yin; S. Hosaka, 2013, Key Engineering Materials, 534, 107, 112

  DOI
• Low power phase change memory via block copolymer self-assembly technology, Beom Ho Mun; Woon Ik Park; You Yin; Byoung Kuk You; Jae Jin Yun; Kung Ho Kim; Yeon Sik Jung; Keon Jae Lee, 2013, Materials Research Society Symposium Proceedings, 1556, 66, 70, International conference proceedings

  DOI
• TiSiN films by reactive RF magnetron co-sputtering for ultra-low-current phase-change memory, You Yin; Sumio Hosaka, 2013, Applied Mechanics and Materials, 392, 702, 706, International conference proceedings

  DOI
• Ultra-multilevel-storage phase-change memory, You Yin; Sumio Hosaka, 2014, Advanced Materials Research, 936, 599, 602, International conference proceedings

  DOI
• 超高密度記録のための相変化チャンネルトランジスタの可能性－1つのトランジスタで、メモリ格納とスイッチオンオフ制御－, 保坂純男; You YIN; 曾根逸人, 2004, 103, 729, 1, 6
• Electric properties of thin GeSbTe and AgInSbTe films by annealing, Y. Yin; H. Sone; S. Hosaka, 2004, Proceedings of the 16th Symposium Phase Change Optical Information Storage PCOS 2004, 23, 26
• Ultra Low Operation Current Lateral Phase-Change Memory, Y. Yin; D. Niida; N. Higano; A. Miyachi; H. Sone; S. Hosaka, 2006, Extended Abstracts of the International Conference on Solid State Devices and Materials, 2006, 562, 563
• GSTの結晶構造および表面形状とラテラル型相変化素子の相変化制御性, 保坂 純男; 宮地 晃平; 尹 友; 仁井田 大輔; 曾根 逸人, 2006, Vol.105, No.654, 1, 6
• A novel multi-channel phase-change memory cell for multi-state storage with high controllability, You Yin; Kazuhiro Ohta; Hayato Sone; Sumio Hosaka, 2007, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 778, 780, International conference proceedings

  DOI
• 電子線描画法を用いた2Tb/in2超高密度パターンドメディア形成の可能性, 保坂純男; 田中保成; M. Zulfakri; 三富直彦; 尹友; 近藤祐治; 有明順, 2009, 1, 6
• Multi-level storage in phase-change memory: from multi-layer to single layer, Y. Yin; S. Hosaka, 2010, Proceedings of The 22nd Symposium on Phase Change Optical Information Storage (PCOS2010)
• Random access multi-levels phase changing using pulse modulation, S. Hosaka; T. Noguchi; S. Kobayashi; R. I. B. Alip; Y. Yin, 2011, Proceedings of the 23rd Symposium on Phase Change Optical Information Storage
• Pattern transfer of 23-nm-diameter block copolymer self-assembled nanodots using CF4 etching with carbon hard mask (CHM) as mask, Miftakhul Huda; Jing Liu; Zulfakri Bin Mohamad; You Yin; Sumio Hosaka, 2013, Materials Science Forum, 737, 133, 136, International conference proceedings

  DOI
• Current-driven crystallization promotion for multilevel storage in phase-change memory, Y. Yin; R. I. Alip; S. Hosaka, 2013, Proceedings of the 24rd Symposium on Phase Change Oriented Science (PCOS2012)
• Computational analysis of heavy ion-DNA interaction using molecular dynamics method, Akie Nagao; You Yin; Sumio Hosaka, 2013, Key Engineering Materials, 643, 193, 197, International conference proceedings

  DOI
• Observation of magnetic nanodot arrays using near-field polarization microscope, Ryosuke Takahashi; Tao Jin; Zulfakri Bin Mohamad; Hui Zhang; Miftakhul Huda; Vu Le Mine Nhat; You Yin; Sumio Hosaka, 2013, Key Engineering Materials, 643, 9, 13, International conference proceedings

  DOI
• Prototype of atomic force microscope with high resolution optical microscope for observing magnetic nanodot arrays, Tao Jin; Ryosuke Takahashi; Hui Zhang; You Yin; Sumio Hosaka, 2013, Key Engineering Materials, 643, 185, 189, International conference proceedings

  DOI
• Long range ordering of 5-nm-sized dot arrays with a pitch of 10 nm along EB-drawn Guide Lines using PS-PDMS self-assembly, Hui Zhang; Miftakhul Huda; Jing Liu; Yulong Zhang; Tao Jin; Sumio Hosaka; You Yin, 2013, Key Engineering Materials, 643, 3, 7, International conference proceedings

  DOI
• Three-dimensional simulation of proposed ring-confined-chalcogenide phase-change memory for reducing reset operation current, You Yin; Sumio Hosaka, 2016, Key Engineering Materials, 698, 149, 153, International conference proceedings

  DOI
• Effect of humidity and bias on the size of nanostructures fabricated by STM anodization and its application to patterns, You Yin, 2016, Key Engineering Materials, 698, 35, 40, International conference proceedings

  DOI
• Advanced nanofabrication and its application to nano phase-change memory for reducing writing current, You Yin; Dai Nishijo; Keita Sawao; Kazumasa Ohyama; Takashi Akahane; Takuya Komori; Miftakhul Huda; Hui Zhang; Sumio Hosaka, 2016, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, 2016, ICSICT, 199, 202, International conference proceedings

  DOI
• Invited : Multi-level recording and high speed changing in phase change recording and high packing : From phase change recording to magnetic nanodot recording, 保坂 純男; 尹 友,張 慧, 2017, 41, 21, 25, 30
• C-N-codoped Sb2Te3 chalcogenides for reducing writing current of phase-change devices, You Yin; Wataru Matsuhashi; Koji Niiyama; Jie Yang; Tao Wang; Jingze Li; Yang Liu; Qi Yu, Oct. 2020, APPLIED PHYSICS LETTERS, 117, 15, Scientific journal

  DOI
• Ferroelectric polarization and fatigue characterization in bismuth-based Aurivillius thin films at lower voltage, J. Yang; D. P. Song; Y. Yin; L. Z. Chen; L-Y. Chen; Y. Wang; J. Y. Wang, Sep. 2019, MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 248, Scientific journal

  DOI
• Porous equipotential body with heterogeneous nucleation sites: A novel 3D composite current collector for lithium metal anode, Weishang Jia; Tao Chen; Ying Wang; Siji Qu; Zeyu Yao; Yuchi Liu; You Yin; Wei Zou; Fu Zhou; Jingze Li, 20 Jun. 2019, Electrochimica Acta, 309, 460, 468, Scientific journal

  DOI
• Chalcogenide-Based Artificial Intelligence Synaptic Device, You Yin; Ryoya Satoh; Keita Sawao, 05 Dec. 2018, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings, International conference proceedings

  DOI
• Handwritten-Digit Recognition by Hybrid Convolutional Neural Network based on HfO2 Memristive Spiking-Neuron, J. J. Wang; S. G. Hu; X. T. Zhan; Q. Yu; Z. Liu; T. P. Chen; Y. Yin; Sumio Hosaka; Y. Liu, 01 Dec. 2018, Scientific Reports, 8, 1, Scientific journal

  DOI
• Smart electronic skin having gesture recognition function by LSTM neural network, G. Y. Liu; D. Y. Kong; S. G. Hu; Q. Yu; Z. Liu; T. P. Chen; Y. Yin; Sumio Hosaka; Y. Liu, 20 Aug. 2018, Applied Physics Letters, 113, 8, Scientific journal

  DOI
• Realization of a Power-Efficient Transmitter Based on Integrated Artificial Neural Network, Deyu Kong; Shaogang Hu; Yuancong Wu; Junjie Wang; Canlong Xiong; Qi Yu; Zhengyu Shi; Zhen Liu; Tupei Chen; You Yin; Sumio Hosaka; Yang Liu, 2018, IEEE Access, 6, 68773, 68781, Scientific journal

  DOI
• Low Power Phase Change Memory using Silicon Carbide as a Heater Layer, M. S. Aziz; Y. Yin; S. Hosaka; Z. Mohammed; R. I. Alip, 2015, 4TH INTERNATIONAL CONFERENCE ON ELECTRONIC DEVICES, SYSTEMS AND APPLICATIONS 2015 (ICEDSA), 99, International conference proceedings

  DOI
• Nanosecond-Order Fast Switching and Ultra-Multilevel Storage in Lateral GeTe and Ge1Sb4Te7-Based Phase-change Memories, You Yin; Sumio Hosaka, 2015, PROCEEDINGS OF 2015 IEEE 11TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), International conference proceedings
• ULTRASMALL-VOLUME-CHANGE CHALCOGENIDE FOR PERFORMANCE IMPROVEMENT OF PHASE-CHANGE MEMORY, You Yin; Sumio Hosaka, 2014, 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), International conference proceedings
• Emulating the paired-pulse facilitation of a biological synapse with a NiOx-based memristor, S. G. Hu; Y. Liu; T. P. Chen; Z. Liu; Q. Yu; L. J. Deng; Y. Yin; Sumio Hosaka, May 2013, APPLIED PHYSICS LETTERS, 102, 18, Scientific journal

  DOI
• Comparison of Nano-sized Pattern of Calixarene and ZEP520 Resists by Using Energy Deposition Distribution, Hui Zhang; Takuya Komori; Zulfakri Mohamad; You Yin; Sumio Hosaka, 2013, ADVANCED MICRO-DEVICE ENGINEERING III, 534, 107, +, International conference proceedings

  DOI
• Evaluation of ordering of directed self-assembly of block copolymers with pre-patterned guides for bit patterned media, Takeshi Okino; Takuya Shimada; Akiko Yuzawa; Ryosuke Yamamoto; Naoko Kihara; Yoshiyuki Kamata; Akira Kikitsu; Takashi Akahane; You Yin; Sumio Hosaka, 2012, ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES IV, 8323, International conference proceedings

  DOI
• NANOMAGNETIC DOT ARRAYS FABRICATION BASED ON ELECTRON BEAM DRAWING AND ITS SIZE EFFECT, S. Hosaka; H. Sano; Y. Tanaka; M. Shirai; Z. Mohamad; Y. Tanaka; H. Sone; Y. Yin, 2009, PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES, 456, +, International conference proceedings
• Orientation-Controlled and Long-Range-Ordered Self-Assembled Nanodot Array for Ultrahigh-Density Bit-Patterned Media, Akahane, Takashi;Huda, Miftakhul;Tamura, Takuro;Yin, You;Hosaka, Sumio, 2011, JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 6

  DOI
• Nanometer resolution stress measurement of the Si gate using illumination-collection-type scanning near-field Raman spectroscopy with a completely metal-inside-coated pyramidal probe, Hosaka, Sumio;Aramomi, Yusuke;Sone, Hayato;Yin, You;Sato, Eiji;Tochigi, Kenji, 2011, NANOTECHNOLOGY, 22, 2

  DOI
• Fabrication of 10-nm-Order Block Copolymer Self-Assembled Nanodots for High-Density Magnetic Recording, Huda, Miftakhul;Akahane, Takashi;Tamura, Takuro;Yin, You;Hosaka, Sumio, 2011, JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 6

  DOI
• Long-range-ordering of self-assembled block copolymer nanodots using EB-drawn guide line and post mixing template, Hosaka, Sumio;Akahane, Takashi;Huda, Miftakhul;Tamura, Takuro;Yin, You;Kihara, Naoko;Kamata, Yoshiyuki;Kitsutsu, Akira, 2011, MICROELECTRONIC ENGINEERING, 88, 8, 2571, 2575

  DOI
• Multilevel storage in lateral phase-change memory by promotion of nanocrystallization, Yin, You;Hosaka, Sumio, 2011, MICROELECTRONIC ENGINEERING, 88, 8, 2794, 2796

  DOI
• Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory, Yoon, Jong Moon;Jeong, Hu Young;Hong, Sung Hoon;Yin, You;Moon, Hyoung Seok;Jeong, Seong-Jun;Han, Jun Hee;Kim, Yong In;Kim, Yong Tae;Lee, Heon;Kim, Sang Ouk;Lee, Jeong Yong, 2012, JOURNAL OF MATERIALS CHEMISTRY, 22, 4, 1347, 1351

  DOI
• Controllable Crystallization in Phase-Change Memory for Low-Power Multilevel Storage, Yin, You;Hosaka, Sumio, 2012, JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 6

  DOI
• Fabrication of high-density In3Sb1Te2 phase change nanoarray on glass-fabric reinforced flexible substrate, Yoon, Jong Moon;Shin, Dong Ok;Yin, You;Seo, Hyeon Kook;Kim, Daewoon;Kim, Yong In;Jin, Jung Ho;Kim, Yong Tae;Bae, Byeong-Soo;Kim, Sang Ouk;Lee, Jeong Yong, 2012, NANOTECHNOLOGY, 23, 25

  DOI
• Controlled promotion of crystallization for application to multilevel phase-change memory, Yin, You;Hosaka, Sumio, 2012, APPLIED PHYSICS LETTERS, 100, 25

  DOI
• Electron Beam Lithography of 15 x 15 nm(2) Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer, Komori, Takuya;Zhang, Hui;Akahane, Takashi;Mohamad, Zulfakri;Yin, You;Hosaka, Sumio, 2012, JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 6

  DOI
• Fabrication of 5-nm-Sized Nanodots Using Self-Assembly of Polystyrene-Poly(dimethylsiloxane), Huda, Miftakhul;Liu, Jing;Yin, You;Hosaka, Sumio, 2012, JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 6

  DOI
• Self-Assembled Incorporation of Modulated Block Copolymer Nanostructures in Phase-Change Memory for Switching Power Reduction, Park, Woon Ik;You, Byoung Kuk;Mun, Beom Ho;Seo, Hyeon Kook;Lee, Jeong Yong;Hosaka, Sumio;Yin, You;Ross, C. A.;Lee, Keon Jae;Jung, Yeon Sik, 2013, ACS NANO, 7, 3, 2651, 2658

  DOI
• Current density enhancement nano-contact phase-change memory for low writing current, Yin, You;Hosaka, Sumio;Park, Woon Ik;Jung, Yeon Sik;Lee, Keon Jae;You, Byoung Kuk;Liu, Yang;Yu, Qi, 2013, APPLIED PHYSICS LETTERS, 103, 3

  DOI
• Recrystallization process controlled by staircase pulse in phase change memory, Yin, You;Kobayashi, Ryota;Hosaka, Sumio, 2014, MICROELECTRONIC ENGINEERING, 113, 61, 65

  DOI
• Volume-change-free GeTeN films for high-performance phase-change memory, Yin, You;Zhang, Hui;Hosaka, Sumio;Liu, Yang;Yu, Qi, 2013, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 46, 50

  DOI
• Ordering of self-assembled 5-nm-diameter poly(dimethylsiloxane) nanodots with sub-10nm pitch using ultra-narrow electron-beam-drawn guide lines and three-dimensional control, Zhang, Hui;Hosaka, Sumio;Yin, You, 2014, APPLIED PHYSICS LETTERS, 104, 9

  DOI
• Effect of a separate heater structure for crystallisation to enable multilevel storage phase-change memory, Alip, Rosalena Irma;Mohamad, Zulfakri;Yin, You;Hosaka, Sumio, 2014, INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 11, 5-8, 389, 395

  DOI
• Attempts to form the 10-nm-order pitch of self-assembled nanodots using PS-PDMS block copolymer, Huda, Miftakhul;Liu, Jing;Bin Mohamad, Zulfakri;Yin, You;Hosaka, Sumio, 2014, INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 11, 5-8, 425, 433

  DOI
• Controlling of 6 nm Sized and 10 nm Pitched Dot Arrays Ordered along Narrow Guide Lines Using PS-PDMS Self-Assembly, Hosaka, Sumio;Akahane, Takashi;Huda, Miftakhul;Zhang, Hui;Yin, You, 2014, ACS APPLIED MATERIALS & INTERFACES, 6, 9, 6208, 6211

  DOI
• Estimation of pattern resolution using NaCl high-contrast developer by Monte Carlo simulation of electron beam lithography, Zhang, Hui;Huda, Miftakhul;Komori, Takuya;Zhang, Yulong;Yin, You;Hosaka, Sumio, 2014, MICROELECTRONIC ENGINEERING, 121, 142, 146

  DOI
• Ordering of 6-nm-sized nanodot arrays with 10-nm-pitch using self-assembled block copolymers along electron beam-drawn guide-lines, Hosaka, Sumio;Akahane, Takashi;Huda, Miftakhul;Komori, Takuya;Zhang, Hui;Yin, You, 2014, MICROELECTRONIC ENGINEERING, 123, 54, 57

  DOI
• gamma-Ray Radiation Effects on an HfO2-Based Resistive Memory Device, Hu, Shaogang;Liu, Yang;Chen, Tupei;Guo, Qi;Li, Yu-Dong;Zhang, Xing-Yao;Deng, L. J.;Yu, Qi;Yin, You;Hosaka, Sumio, 2018, IEEE TRANSACTIONS ON NANOTECHNOLOGY, 17, 1, 61, 64

  DOI
• Formation of 7-nm-wide Line&Spaces in Half Pitch by 3 Dimensional Self-assembly of Nano-dots Using Sphere Type PS-PDMS, Sumio Hosaka; Hui Zhang; You Yin; Hayato Sone, 30 Dec. 2021, European Journal of Applied Physics, 3, 6, 84, 90, Scientific journal

  DOI
• First-principles calculation of photocurrent in monolayer silicene sheet under small voltages, Wang, Tao;Chen, Minyan;Fan, Bowen;Liu, Yan;Sheng, Kuang;Yin, You;Xie, Yiqun, 2017, OPTICS COMMUNICATIONS, 395, 289, 292

  DOI
• The phosphorene under the external electronic field and strain, Wang, Tao;Liu, Yan;Wen, Wen;Guo, Wei;Yin, You, 2017, INTERNATIONAL JOURNAL OF MODERN PHYSICS C, 28, 12

  DOI
• Realization of a Power-Efficient Transmitter Based on Integrated Artificial Neural Network, Kong, Deyu;Hu, Shaogang;Wu, Yuancong;Wang, Junjie;Xiong, Canlong;Yu, Qi;Shi, Zhengyu;Liu, Zhen;Chen, Tupei;Yin, You;Hosaka, Sumio;Liu, Yang, 2018, IEEE ACCESS, 6, 68773, 68781

  DOI
• Porous equipotential body with heterogeneous nucleation sites: A novel 3D composite current collector for lithium metal anode, Jia, Weishang;Chen, Tao;Wang, Ying;Qu, Siji;Yao, Zeyu;Liu, Yuchi;Yin, You;Zou, Wei;Zhou, Fu;Li, Jingze, 2019, ELECTROCHIMICA ACTA, 309, 460, 468

  DOI
• C-N-codoped Sb2Te3 chalcogenides for reducing writing current of phase-change devices, Yin, You;Matsuhashi, Wataru;Niiyama, Koji;Yang, Jie;Wang, Tao;Li, Jingze;Liu, Yang;Yu, Qi, 2020, APPLIED PHYSICS LETTERS, 117, 15

  DOI
• A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low RESET Current and Power Consumption, YIN You;MIYACHI Akihira;NIIDA Daisuke;SONE Hayato;HOSAKA Sumio, Jul. 2006, Japanese journal of applied physics Pt. 2 Letters & express letters, 45, 24, L726, L729
• Memory Effect in Metal-Chalcogenide-Metal Structures for Ultrahigh-Density Nonvolatile Memories, YIN You;SONE Hayato;HOSAKA Sumio, Jun. 2006, Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers, 45, 6, 4951, 4954
• Annealing effect of phase change and current control in phase change channel transistor memory, YIN You;NIIDA Daisuke;SONE Hayato;HOSAKA Sumio, Sep. 2005, 2005, 644, 645
• Ultra Low Operation Current Lateral Phase-Change Memory, YIN You;NIIDA Daisuke;HIGANO Naoya;MIYACHI Akihira;SONE Hayato;HOSAKA Sumio, Sep. 2006, 2006, 562, 563
• Extremely Small Proximity Effect in 30keV Electron Beam Drawing with Thin Calixarene Resist for 20 x 20nm^2 Pitch Dot Arrays, HOSAKA Sumio;MOHAMAD Zulfakri;SHIRA Masumi;SANO Hirotaka;YIN You;MIYACHI Akihira;SONE Hayato, Feb. 2008, Applied physics express, 1, 2, "27003, 1"-"27003-3"
• Possibility of phase change channel transistor for ultrahigh density memory : Nonvolatile memory and channel current control functions in the transistor, HOSAKA Sumio;YIN You;SONE Hayato, Mar. 2004, Technical report of IEICE. SDM, 103, 729, 1, 6
• Perspectives of phase change memory devices, HOSAKA Sumio;YIN You, Jul. 2012, IEICE technical report. Magnetic recording, 112, 137, 1, 11
• Dependences of Electrical Properties of Thin GeSbTe and AgInSbTe Films on Annealing, Yin You;Sone Hayato;Hosaka Sumio, 2005, Japanese Journal of Applied Physics, 44, 8, 6208, 6212
• Step-In Mode NC-AFM Using a Quadrature Frequency Demodulator for Observing High-Aspect Ratio Structures in Air, Hosaka Sumio;Terauchi Daisuke;Takizawa Takayuki;Yin You;Sone Hayato, 2011, e-Journal of Surface Science and Nanotechnology, 9, 122, 125
• Scanning electron microscope for in situ study of crystallization of Ge2Sb2Te5 in phase-change memory., Yin You;Niida Daisuke;Ota Kazuhiro;Sone Hayato;Hosaka Sumio, The Review of scientific instruments, 78, 12

  DOI
• Observation of Si pattern sidewall using inclination atomic force microscope for evaluation of line edge roughness., Hosaka Sumio;Koyabu Hirokazu;Noro Masamichi;Takizawa Katsuyuki;Sone Hayato;Yin You, Journal of nanoscience and nanotechnology, 10, 7

  DOI
• Nanometer resolution stress measurement of the Si gate using illumination-collection-type scanning near-field Raman spectroscopy with a completely metal-inside-coated pyramidal probe., Hosaka Sumio;Aramomi Yusuke;Sone Hayato;Yin You;Sato Eiji;Tochigi Kenji, 08 Dec. 2010, Nanotechnology, 22, 2

  DOI
• Controlling of 6 nm sized and 10 nm pitched dot arrays ordered along narrow guide lines using PS-PDMS self-assembly., Hosaka Sumio;Akahane Takashi;Huda Miftakhul;Zhang Hui;Yin You, 30 Apr. 2014, ACS applied materials & interfaces, 6, 9

  DOI
• Flexible one diode-one phase change memory array enabled by block copolymer self-assembly., Mun Beom Ho;You Byoung Kuk;Yang Se Ryeun;Yoo Hyeon Gyun;Kim Jong Min;Park Woon Ik;Yin You;Byun Myunghwan;Jung Yeon Sik;Lee Keon Jae, 31 Mar. 2015, ACS nano, 9, 4

  DOI
• Memory effect in metal-chalcogenide-metal structures for ultrahigh-density nonvolatile memories, Yin, You;Sone, Hayato;Hosaka, Sumio, 2006, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45, 6A, 4951, 4954

  DOI
• A novel lateral phase-change random access memory characterized by ultra low RESET current and power consumption, Yin, You;Miyachi, Akihira;Niida, Daisuke;Sone, Hayato;Hosaka, Sumio, 2006, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 45, 24-28, L726, L729

  DOI
• Simulation of proposed confined-chalcogenide phase-change random access memory for low reset current by finite element modelling, Yin, You;Sone, Hayato;Hosaka, Sumio, 2006, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45, 8A, 6177, 6181

  DOI
• Finite element analysis of dependence of programming characteristics of phase-change memory on material properties of chalcogenides, Yin, You;Sone, Hayato;Hosaka, Surnio, 2006, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45, 11, 8600, 8603

  DOI
• Prototype of phase-change channel transistor for both nonvolatile memory and current control, Hosaka, Sumio;Miyauchi, Kunihiro;Tamura, Takuro;Yin, You;Sone, Hayato, 2007, IEEE TRANSACTIONS ON ELECTRON DEVICES, 54, 3, 517, 523

  DOI
• Nano-dot arrays with a bit pitch and a track pitch of 25 nm formed by EB writing for 1 Tb/in(2) storage, Hosaka, Sumio;Sano, Hirotaka;Shirai, Masumi;Yin, You;Sone, Hayato, 2007, MICROELECTRONIC ENGINEERING, 84, 5-8, 802, 805

  DOI
• A chalcogenide-based device with potential for multi-state storage, Yin, You;Sone, Hayato;Hosaka, Sumio, 2007, MICROELECTRONICS JOURNAL, 38, 6-7, 695, 699

  DOI
• Characterization of nitrogen-doped Sb2Te3 films and their application to phase-change memory, Yin, You;Sone, Hayato;Hosaka, Sumio, 2007, JOURNAL OF APPLIED PHYSICS, 102, 6

  DOI
• Scanning electron microscope for in situ study of crystallization of Ge2Sb2Te5 in phase-change memory, Yin, You;Niida, Daisuke;Ota, Kazuhiro;Sone, Hayato;Hosaka, Sumio, 2007, REVIEW OF SCIENTIFIC INSTRUMENTS, 78, 12

  DOI
• Lateral SbTeN based multi-layer phase change memory for multi-state storage, Yin, You;Sone, Hayato;Hosaka, Sumio, 2007, MICROELECTRONIC ENGINEERING, 84, 12, 2901, 2906

  DOI
• Extremely small proximity effect in 30keV electron beam drawing with thin calixarene resist for 20 x 20 nm(2) pitch dot arrays, Hosaka, Sumio;Mohamad, Zulfakri;Shira, Masumi;Sano, Hirotaka;Yin, You;Miyachi, Akihira;Sone, Hayato, 2008, APPLIED PHYSICS EXPRESS, 1, 2

  DOI
• Ultramultiple-level storage in TiN/SbTeN double-layer cell for high-density nonvolatile memory, Yin, You;Higano, Naoya;Sone, Hayato;Hosaka, Sumio, 2008, APPLIED PHYSICS LETTERS, 92, 16

  DOI
• Nano-dot and -pit arrays with a pitch of 25 nm x 25 nm fabricated by EB drawing, RIE and nano-imprinting for 1 Tb/in(2) storage, Hosaka, Sumio;Mohamad, Zulfakri;Shirai, Masumi;Sano, Hirotaka;Yin, You;Miyachi, Akihira;Sone, Hayato, 2008, MICROELECTRONIC ENGINEERING, 85, 5-6, 774, 777

  DOI
• Multilevel storage in lateral top-heater phase-change memory, Yin, You;Ota, Kazuhiro;Higano, Naoya;Sone, Hayato;Hosaka, Sumio, 2008, IEEE ELECTRON DEVICE LETTERS, 29, 8, 876, 878

  DOI
• Multilevel Storage in N-Doped Sb2Te3-Based Lateral Phase Change Memory with an Additional Top TiN Layer, Yin, You;Ota, Kazuhiro;Noguchi, Tomoyuki;Ohno, Hiroki;Sone, Hayato;Hosaka, Sumio, 2009, JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 4

  DOI
• Programming margin enlargement by material engineering for multilevel storage in phase-change memory, Yin, You;Noguchi, Tomoyuki;Ohno, Hiroki;Hosaka, Sumio, 2009, APPLIED PHYSICS LETTERS, 95, 13

  DOI
• Observation of Si Pattern Sidewall Using Inclination Atomic Force Microscope for Evaluation of Line Edge Roughness, Hosaka, Sumio;Koyabu, Hirokazu;Noro, Masamichi;Takizawa, Katsuyuki;Sone, Hayato;Yin, You, 2010, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 10, 7, 4522, 4527

  DOI
• Possibility of Forming 18-nm-Pitch Ultrahigh Density Fine Dot Arrays for 2 Tbit/in.(2) Patterned Media Using 30-keV Electron Beam Lithography, Hosaka, Sumio;Tanaka, Yasunari;Shirai, Masumi;Mohamad, Zulfakri;Yin, You, 2010, JAPANESE JOURNAL OF APPLIED PHYSICS, 49, 4

  DOI
• Possibility of Freely Achievable Multilevel Storage of Phase-Change Memory by Staircase-Shaped Pulse Programming, Yin, You;Noguchi, Tomoyuki;Hosaka, Sumio, 2011, JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 10

  DOI
• Low-Reset-Current Ring-Confined-Chalcogenide Phase Change Memory, Yin, You;Hosaka, Sumio, 2012, JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 10

  DOI
• Simulation of Fine Resist Profile Formation by Electron Beam Drawing and Development with Solubility Rate Based on Energy Deposition Distribution, Zhang, Hui;Komori, Takuya;Zhang, Yulong;Yin, You;Hosaka, Sumio, 2013, JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 12

  DOI
• Tunable bandgap of monolayer black phosphorus by using vertical electric field: A DFT study, Wang, Tao;Liu, Yan;Guo, Qing;Zhang, Bin;Sheng, Kuang;Li, Can;Yin, You, 2015, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 66, 6, 1031, 1034

  DOI
• Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-Change Nanostructures with an Extremely Low Switching Current, Park, Woon Ik;Kim, Jong Min;Jeong, Jae Won;Hur, Yoon Hyoung;Choi, Young Joong;Kwon, Se-Hun;Hong, Seungbum;Yin, You;Jung, Yeon Sik;Kim, Kwang Ho, 2015, CHEMISTRY OF MATERIALS, 27, 7, 2673, 2677

  DOI
• Flexible One Diode-One Phase Change Memory Array Enabled by Block Copolymer Self-Assembly, Mun, Beom Ho;You, Byoung Kuk;Yang, Se Ryeun;Yoo, Hyeon Gyun;Kim, Jong Min;Park, Woon Ik;Yin, You;Byun, Myunghwan;Jung, Yeon Sik;Lee, Keon Jae, 2015, ACS NANO, 9, 4, 4120, 4128

  DOI
• The effect of h-BN buffer layers in bilayer graphene on Co (111), Li, Can;Liu, Yan;Zhang, Bin;Wang, Tao;Guo, Qing;Sheng, Kuang;Yin, You, 2015, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 66, 10, 1631, 1636

  DOI
• Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current, Yin, You;Wang, Tao, 2015, IEEE TRANSACTIONS ON ELECTRON DEVICES, 62, 7, 2184, 2189

  DOI
• Bandgap engineering of monolayer MoS2 under strain: A DFT study, Li, Can;Fan, Bowen;Li, Weiyi;Wen, Luowei;Liu, Yan;Wang, Tao;Sheng, Kuang;Yin, You, 2015, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 66, 11, 1789, 1793

  DOI
• Oxygen-doped Sb2Te3 for high-performance phase-change memory, Yin, You;Morioka, Shota;Kozaki, Shun;Satoh, Ryoya;Hosaka, Sumio, 2015, APPLIED SURFACE SCIENCE, 349, 230, 234

  DOI
• Ultra-multiple and reproducible resistance levels based on intrinsic crystallization properties of Ge1Sb4Te7 film, Yin, You;Iwashita, Shota;Hosaka, Sumio;Wang, Tao;Li, Jingze;Liu, Yang;Yu, Qi, 2016, APPLIED SURFACE SCIENCE, 369, 348, 353

  DOI
• The dependence of crystallization on temperature in the nanosecond timescale for GeTe-based fast phase-change resistor, Zhang, Hui;Zhang, Yulong;Yin, You;Hosaka, Sumio, 2016, CHEMICAL PHYSICS LETTERS, 650, 102, 106

  DOI
• Sub 10 ns fast switching and resistance control in lateral GeTe-based phase-change memory, Yin, You;Zhang, Yulong;Takehana, Yousuke;Kobayashi, Ryota;Zhang, Hui;Hosaka, Sumio, 2016, JAPANESE JOURNAL OF APPLIED PHYSICS, 55, 6

  DOI
• Scanning Near Field Circular Polarization Optical Microscope for Measuring Magnetic Nanodot Arrays, Jin, Tao;Shen, Lu;Hosaka, Sumio;Yin, You;Miura, Takeshi;Hou, Wenmei, 2017, SCIENCE OF ADVANCED MATERIALS, 9, 1, 151, 155

  DOI
• Ab initio Study of Tunable Band Gap of Monolayer and Bilayer Phosphorene by the Vertical Electronic Field, Wang Tao;Guo Wei;Wen Luowei;Liu Yan;Zhang Bin;Sheng Kuang;Yin You, 2017, JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION, 32, 1, 213, 216

  DOI
• Crystal and surface structures of GST film and phase-change controlability of lateral type GST phase-change resistor, HOSAKA Sumio;MIYACHI Akihira;YIN You;NIIDA Daisuke;SONE Hayato, Mar. 2006, IEICE technical report, 105, 654, 1, 6
• Parallel metal-insulator-metal diode with an ultrathin spin-coated hydrogen silsesquioxane insulating layer, Takashi Akahane; Sho Ishii; Keisuke Yanagisawa; You Yin, 01 Jun. 2023, Japanese Journal of Applied Physics, 62, SG, Scientific journal

  DOI
• Characterization of undoped and N-Ti codoped Zn5Sb3Te chalcogenides, Takao Fujiwara; Koji Niiyama; You Yin, 01 Jun. 2023, Japanese Journal of Applied Physics, 62, Scientific journal

  DOI
• Braille recognition by E-skin system based on binary memristive neural network, Y. H. Liu; J. J. Wang; H. Z. Wang; S. Liu; Y. C. Wu; S. G. Hu; Q. Yu; Z. Liu; T. P. Chen; Y. Yin; Y. Liu, 03 Apr. 2023, Scientific Reports, 13, 1, Scientific journal

  DOI
• Chalcogenides and their applications to advanced phase-change-devices toward future IoT era, You Yin; Wataru Matsuhashi; Koji Niiyama; Dai Nishijo; Keita Sawao, 03 Nov. 2020, 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings, International conference proceedings

  DOI
• N-Doped GeTe for Phase-Change Device with High Reliability, S. Yahagi; Y. Yin, 2023, Journal of Mechanical and Electrical Intelligent System, 6, 10, 14
• O-doped GeTe/Sb₂Te₃ multilayer chalcogenide for multi-level phase-change device, Mutsumi Miuchi; Kazuki Matsuda; Shota Yoshimoto; Eiji Sawai; You Yin, 01 Apr. 2025, Japanese Journal of Applied Physics, 64, 4, 04SP29, 04SP29, Scientific journal

  DOI
• Effect of RESET operation of CiM with PCM on recognition accuracy, Kento Yano; You Yin; Kazuteru Namba, Jul. 2024, 3, 4
• N-O Doped Sb2Te3 Phase-Change Materials for High Performance Artificial Synaptic Device, You Yin; Koji Niiyama, Mar. 2024, 7, 1585

MISC

• Electromagnetic Analysis of Antenna Used for Optical Rectenna, K. Yanagisawa, T. Akahane, and Y. Yin, Dec. 2020
• Measurement of coercive force enhanced by nanometer-sizing of magnetic dot by X-ray magnetic circular dichroism (XMCD), Sumio Hosaka; Zulfakri Mohamad; You Yin; Hiroshi Sakurai; Yuji Kondo; Jun Ariake; Naoki Honda; Motohiro Suzuki, 2013, ADVANCED MICRO-DEVICE ENGINEERING III, 534, 122, +

  DOI
• 高密度パターンドメディアのための電子線描画ポスト格子とガイドラインによる自己組織化パターンの規則配列制御, 赤羽隆志; HUDA Mifutakhul; 田村拓郎; YIN You; 保坂純男; 木原尚子; 鎌田芳幸; 喜々津哲, 30 Aug. 2010, 応用物理学会学術講演会講演予稿集(CD-ROM), 71st, ROMBUNNO.14A-NC-11
• 高密度磁気配録のためのブロック共重合体による自己組織化10mmナノドット形成, HUDA Miftakhul; 赤羽隆志; 田村拓郎; YIN You; 保坂純男; 木原尚子; 鎌田芳幸; 喜々津哲, 30 Aug. 2010, 応用物理学会学術講演会講演予稿集(CD-ROM), 71st, ROMBUNNO.14A-NC-10
• Perspectives of phase change memory devices, HOSAKA Sumio; YIN You, 12 Jul. 2012, IEICE technical report. Magnetic recording, 112, 137, 1, 11
• Perspectives of phase change memory devices, 保坂 純男; 尹 友, Jul. 2012, 36, 28, 1, 11
• Annealing effect of phase change and current control in phase change channel transistor memory, YIN You; NIIDA Daisuke; SONE Hayato; HOSAKA Sumio, 13 Sep. 2005, 2005, 644, 645

Books etc

• State-of-the-Art of Quantum Dot System Fabrications, 2012, ISBN: 9789535106494

Presentations

• Doped Chalcogenides for High-Performance Phase Change Devices, Y. Yin, M. Miuchi, S. Yahagi, and T. Fujiwara, 2023 IEEE 15th International Conference on ASIC (ASICON 2023), 24 Oct. 2023, 27 Oct. 2023
• Electromagnetic Analysis of Antenna Used for Optical Rectenna, K. Yanagisawa, T. Akahane, and Y. Yin, International Conference on Technology and Social Science 2020 (ICTSS2020), Dec. 2020
• “Nanosecond-Order Fast Switching and Ultra-Multilevel Storage in Lateral GeTe and Ge1Sb4Te7-Based Phase-Change Memories”, The 11th International Conference on ASIC (ASICON 2015), 2015
• “Crystal growth control in chalcogenide and its application to multilevel storage in phase-change memory”, The Collaborative Conference on Crystal Growth (3CG 2015),, Dec. 2015, International conference
• “Fast switching and resistance control in chalcogenide-based memory device”, The Collaborative Conference on Crystal Growth (3CG 2016), 2016
• “Multilevel Storage in Lateral Phase-Change Memory”, 2016 International Workshop on Information Storage / 10th International Symposium on Optical Storage (IWIS/ISOS 2016), Apr. 2016
• [招待講演]“相変化記録の多値化と高速化へのアプローチおよび微細性”, MR ITE-MMS, Jul. 2017
• “Properties of N-doped Sb2Te3 Film and Its Application to Artificial Intelligence Synaptic Device”, International Conference on Technology and Social Science 2018 (ICTSS 2018), Apr. 2018, International conference
• “High-performance phase-change memory devices”, 3rd International Conference on Engineering and Its Education (3rd ICAEE 2018), Oct. 2018, International conference
• “Chalcogenide-based Artificial Intelligence Synaptic Device”, 2018 IEEE 14th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2018), Nov. 2018, International conference
• “Fabrication of nanodot array and its characterization by scanning near field circular polarization optical microscope”, the 5th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2018), Nov. 2018, International conference
• Realization of Flexible Block Copolymer-Incorporated One Diode-One Phase Change Memory Array on Plastic Substrate, 2015 MRS Fall Meeting, Boston, Dec. 2015
• Resistance Control for Multilevel Storage in Phase-Change Memory by Pulse Engineering, The 7th IEEE international Nanoelectronics Conference 2016 (INEC 2016), May 2016
• “Advanced Nanofabrication and its Application to Nano Phase-Change Memory for Reducing Writing Current”, 2016 IEEE 13th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2016), Oct. 2016
• Nano Phase-Change Memory Array, 3rd International Symposium of Gunma University Medical Innovation (GUMI) and 8th International Conference on Advanced Micro-Device Engineering (AMDE), Dec. 2016
• Phase-Change Materials and Memory Devices for IoT Application, The IEEE 12th International Conference on ASIC (ASICON 2017), Oct. 2017
• N-Sb2Te3を用いたシナプス素子に関する研究, The 14th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, Nov. 2017
• 有限要素法による低動作電流相変化メモリの検討, The 14th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, Nov. 2017
• “High-Performance Phase-Change Memory”, Gunma University International Symposium for Collaboration of Research and Education 2018 (GUISCRE2018), Mar. 2018
• C-doped and C-N-codoped Sb2Te3 Chalcogenides for Reducing Power Consumption of Phase-change Memory, GUMI & AMDE2018, Dec. 2018
• Nanostructure-incorporated Phase-change Memory, GUMI & AMDE2018, Dec. 2018
• Ultrahigh-density Nano Phase-change Memory Array, Gunma International Symposium 2018 on Membranes, 2D Matters and Device Applications, Jan. 2018
• N-doped Chalcogenide Films and Their Application to Multi-level Storage Phase-change Memory, Gunma International Symposium 2018 on Membranes, 2D Matters and Device Applications, Jan. 2018
• Phase-change Memory with Low Programing Current and Power Consumption for IoT Application, Gunma International Symposium 2018 on Membranes, 2D Matters and Device Applications, Jan. 2018
• N-doped Sb2Te3 synaptic device for brain-like computer, Gunma International Symposium 2018 on Membranes, 2D Matters and Device Applications, Jan. 2018
• Fabrication of Nanometer Sized Si Dot Arrays Using Reactive Ion Etching with Metal Dot Arrays, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010
• Pico-Newton Controlled Step-in Mode NC-AFM Using a Quadrature Demodulator and a Slim Probe in Air for CD-AFM, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010
• Monte Carlo Simulation of Electron Scattering Processes for High-Resolution Electron Beam Lithography, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010
• Guide Pattern Functionalization for Regularly Arranged PS-PDMS Self-Assembled Nanodot Pattern by Brush Processing, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010
• Formation of 12-nm Nanodot Pattern by Diblock Copolymer Self-Assembly Technique, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010
• Random-Access Multilevel Storage in Phase-Change Memory by Staircase-Like Pulse Programming, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010
• Challenge to form 25x25 nm2 pitch dot on magnetic thin film on glass substrate for 1 Tb/in2 magnatic strage, 2nd International Workshop on Nanotechnology, 2009
• Near-filed Raman spectroscopy using illumination-collection mode with typical AFM pyramidal probe, 2nd International Workshop on Nanotechnology, 2009
• Multiple-Level Storage in N-doped-SbTe Phase-Change Memory with an Additional Top TiN Layer, 2nd International Workshop on Nanotechnology, 2009
• Research activities on nanotechnology in Hosaka Lab, 2nd International Workshop on Nanotechnology, 2009
• Small consumption power and multi-level storage in lateral type phase-change memory with a top heater, PCOS 2008, 2008
• 20 nm x 20 nm pitch fine dot arrays formed by 30 keV EB lithography and ion-milling, MRS International Materials Research Conference 2008, 2008
• Fabrication of fine magnetic column arrays by 30 keV EB lithography and ion-milling, 34th International Conference on Micro- and Nano-Engineering 2008, 2008
• Low power writing in lateral type phase-change memory, 2008 European/Phase Change and Ovonics Symposium, 2008
• Multi-level-storage in lateral SbTeN-based phase-change memory with an additional top TiN layer, Extended Abstracts of the International Conference on Solid State Devices and Materials, 2008
• Formation of 20 nm x 20 nm fine pitch dot arrays by 30 keV EB lithography, The International MRS 2008 Conference Beijing AAA Satellite Meeting on Advanced Technologies for Advanced Characterizations of Advanced Materials, 2008
• Reactively sputtered Ti-Si-N films for application to heating layer in low-current phase-change memory, MRS International Materials Research Conference 2008, 2008
• Ultramultiple-level storage in N-doped-Sb2Te3 phase-change memory with an additional top TIN layer, The International MRS 2008 Conference Beijing AAA Satellite Meeting on Advanced Technologies for Advanced Characterizations of Advanced Materials, 2008
• Nanometer scale studies of phase-change material using NC-AFM, XRD, and TEM, The 2nd Gunma International Symposium on Chemistry, 2007
• Direct and indirect heating of low power lateral type PCMD, 1st Surface and Nano Science Workshop, 2007
• Nano-dot arrays with a pitch of 25 nm x 25nm written by EB writer for over 1 Tb/in2 storage, 1st Surface and Nano Science Workshop, 2007
• Characteristics of N-doped Sb2Te3 Films by X-Ray Diffraction and Resistance Measurement for Phase-Change Memory, 2007 MRS Spring Meeting, 2007
• UHV NC-AFM Observation of Surface Structure and Grain Size Changes of Ge2Sb2Te5 Films by Annealing Effect, The 14th International Colloquium on Scanning Probe Microscopy, 2006
• A Novel Multi-Channel Phase-Change Memory Cell for Multi-State Storage with High Controllability, 8th Intern. Conf. on Solid-State and Integrated Circuit Technology, 2006
• Thickness Dependences of Phase Change and Channel Current Control in Phase-Change Channel Transistor, 2005 IEEE International Conference on Electron Devices and Solid-State Circuits, 2005
• Annealing effect of phase change and current control in phase change channel transistor memory, 2005 Intern. Conf. Solid State Devices and Materials (SSDM 2005), 2005
• Electric properties of thin GeSbTe and AgInSbTe films by annealing, 16th Symposium Phase Change Optical Information Storage PCOS 2004, 2004
• Large Resistance Ratio for High Reliability of Multi-Level Storage in Phase-Change Memory, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009
• Guide Pattern for Long-Range-Order Nanofabrication of Self-Assembled Block Copolymers, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009
• Self-Assembled Nanodot Fabrication by Using Diblock Copolymer, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009
• Fabrication of Si Dot Arrays by EB Lithography and Dry Etching for Quantum Dot Solar Cells, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009
• Prototype of illumination-collection mode scanning near-field optical microscopy and Raman spectroscopy with aperture-less pyramidal probe, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009
• Material engineering in phase-change memory for low power consumption and multi-level storage, the 5th Interna-tional Conference on Electron Devices and Solid State Circuits, 2009
• Multi-Level Storage in Lateral Phase-Change Memory, the International Conference on Nanoscience and Technology, China 2009 (ChinaNANO 2009), 2009
• Nano magnetic column arrays fabrication for patterned media in magnetic recording using EB lithography and ion milling, the 5th Interna-tional Conference on Electron Devices and Solid State Circuits, 2009
• Nano magnetic column arrays fabrication for patterned media in magnetic recording using EB lithography and ion milling, the International Conference on Nanoscience and Technology, China 2009 (ChinaNANO 2009), 2009
• Research on low power consumption and multi-level storage in phase-change memory, the 2nd NSC-JST Nano Device Workshop, 2009
• Challenge to form 25 × 25 nm2 pitch dot on magnetic thin film on glass substrate for 1Tb/in2 magnetic storage, 2nd International Workshop on Nanotechnology, 2009
• Ultra low operation current lateral phase-change memory, the International Conference on Solid State Devices and Materials, 2006
• Lateral type phase-change memory with top heater for low-power consumption, 2nd International Workshop on Nanotechnology, 2009
• Nano-dot and pit arrays with a pitch of 25 nm x 25 nm fabricated by EB drawing, RIE and nano-imprinting toward 1 Tb/ in2 storage, 2nd international symposium on MONODZUKURI, 2009
• Fabrication of dot arrays by EB lithography for quantum dot solar cell, 2nd international symposium on MONODZUKURI, 2009
• Fine dot pattern formation on magnetic film for high density magnetic storage, 2nd international symposium on MONODZUKURI, 2009
• Research on low power consumption and multi-level storage in phase-change memory, 2nd international symposium on MONODZUKURI, 2009
• Low power lateral phase-change memory, 2nd international symposium on MONODZUKURI, 2009
• Characterization of N-Doped Chalcogenide Film for Application to Phase-Change Memory as Next-Generation Memory, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010
• Multi-level storage in phase-change memory: from multi-layer to single layer, The 22nd Symposium on Phase Change Optical Information Storage (PCOS2010), 2010
• Long-range-ordering of nanodot arrays using self-assembled block copolymers with EB drawn guide post and line mixing templates, The 36th International Conference on Micro & Nano Engineering (MNE), 2010
• Multilevel storage in lateral phase-change memory by promotion of nanocrystallization, The 36th International Conference on Micro & Nano Engineering (MNE), 2010
• Multi-levels phase change memory using pulse modulation, EPCOS 2010, 2010
• Step-in mode NC-AFM for CD measurement of fine structure in air, The 13th International Conference on Non-Contact Atomic Force Microscopy, 2010
• Measurement of Local Stress Distribution in Fine Silicon Gate Using Illumination-Collection Mode Scanning Near-Field Optical Microscopy and Raman Spectroscopy, The 7h International Forum on Advanced Material Science and Technology, 2010
• Ultramultiple-multi-level storage in SbTeN-based phase-change memory, The 7h International Forum on Advanced Material Science and Technology, 2010
• Observation of Si pattern sidewall using inclination AFM for evaluation of line edge roughness, TBN 2008, 2008
• ヒーター層付きラテラル型相変化メモリのジュール加熱シミュレーション, 第54回応用物理学会関連連合講演会, 2007
• ヒーター層付きラテラル型相変化メモリ素子の繰り返し相変化実験, 第54回応用物理学会関連連合講演会, 2007
• ラテラル型相変化抵抗素子における相変化繰り返し実験, 第53回応用物理学会関連連合講演会, 2006
• UHV-AFMを用いた加熱前/後におけるGe2Sb2Te5薄膜の表面構造の観察, 第66回応用物理学会学術講演会, 2005
• 相変化メモリトランジスタと結晶成長, 日本結晶成長学会 第34回結晶成長国内会議, 2004
• 相変化チャンネルを用いたメモリトランジスタの可能性, シリコン材料・デバイス研究会「新型不揮発性メモリー」, 2004
• ラテラル型窒素ドープSbTeによる多値記録マルチレイヤー相変化メモリ, 第68回応用物理学会学術講演会, 2007
• ＲＲＡＭスイッチング動作に及ぼすジュール加熱の影響, 2008年春季 第55回応用物理学関係連合講演会, 2008
• 低消費電力化のための上部ヒーター付ラテラル相変化素子, 2008年秋季 第69回応用物理学会学術講演会, 2008
• 上部ヒータ付ラテラル型相変化メモリの多値記録, 2008年秋季 第69回応用物理学会学術講演会, 2008
• In Situ SEM Observation of Grain Formation and Growth Induced by Electrical Pulses in Lateral Ge2Sb2Te5 Phase-Change Memory, 2007 MRS Spring Meeting, 2007
• Scanning Near-field Raman spectroscopy (SNRS) to detect the stress distribution for high spatial resolution, 2nd international symposium on MONODZUKURI, 2009
• Coercive force enhanced by nanaometer-sizing of magnetic column for patterned media and measured by X-ray magnetic circular dichroism in SR, the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), 2011
• Electron Beam Lithography for 10-nm-Wide Nanowire Phase-Change Memory, 2011 MRS Spring Meeting, 2011
• Diblock Copolymer Self-Assembled Nanodots for Next-Generation Magnetic Recording, the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), 2011
• Estimation of Nanometer-Scale Patterning of Calixarene Resist in Electron Beam Lithography, the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), 2011
• Formation of 13-nm-Pitch Block Copolymer Self-Assembled Nanodots Pattern for High-Density Magnetic Recording, The 4th Nanoscience and Nanosmposium, 2011
• 10-nm-Order-Wide Nanowire Phase-Change Memory, the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), 2011
• Ordering of 12 nm-pitched nanodot arrays using block copolymers self-assemble and EB drawn guide line template for 5 Tbit/in2 magnetic recording, the 38th International Micro & Nano Engineering Conference (MNE 2012), 2012
• Controlled promotion of crystallization for multilevel phase-change memory, the 38th International Micro & Nano Engineering Conference (MNE 2012), 2012
• Current-driven crystallization promotion for multilevel storage in phase-change memory, The 24th Symposium on Phase Change Oriented Science (PCOS 2012), 2012
• Pattern Transfer of 23-nm-Diameter Block Copolymer Self- Assembled Nanodots Using CF4 etching with Carbon Hard Mask (CHM) as Mask, Nanotechnology Applications in Energy and Environment (NAEE2012), 2012
• Fast Operation and Resistance Control in GeTe-Based Lateral Phase Change Memory, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
• Fusion of top-down and bottom-up technologies for single nano-patterning, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
• Fabrication of CoPt Nanodot Array with a Pitch of 33 nm Using Pattern-Transfer Technique of PS-PDMS Self-Assembly, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
• Fabrication of Carbon Nanodot Arrays with a Pitch of 20 nm for Pattern-Transfer of PDMS Self-Assembled nanodots, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
• Ordering of Self-Assembled Nanodots Improved by Guide Pattern with Low Line Edge Roughness for 5 Tbit/in.2 Patterned Media, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
• A New Modeling of Calculating Resist Profile Based on Energy Deposition Distribution in Electron Beam Lithography, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
• Controlled Crystallization Process of Phase-change Memory device by a Separate Heater Structure, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
• Fabrication of 25-nm-Pitched CoPt Magnetic Dot Arrays using 30-keV-Electron Beam Drawing, RIE and Ion milling, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
• Challenge to form the 10-nm-order pitch of self-assembled nanodots using PS-PDMS block copolymer, the Sixth International Conference on Advanced Materials and Nanotechnology (AMN6), 2013
• Nanometer effect of dot diameter for 40 nm magnetic dot pitch for patterned media prepared by EBL and ion milling and measured by Micro X-Ray Magnetic Circular Dichroism, the Sixth International Conference on Advanced Materials and Nanotechnology (AMN6), 2013
• Low-Volume-Change High-Crystallization-Temperature Phase-Change Material for High-Performance Phase-Change Memory by N-Doping into GeTe, 2013 MRS Spring Meeting, 2013
• Fast Operation and Freely Achievable Multiple Resistance Levels in GeTe-Based Lateral Phase Change Memory, 2013 MRS Spring Meeting, 2013
• Simulation of Fine Resist Profile Formation by Electron Beam Drawing and Development with Solubility Rate Based on Energy Deposition Distribution, 7th International Conference on Materials for Advanced Technologies (ICMAT), 2013
• Long-range Ordering of 6-nm-sized Nanodot Arrays Using Self-assemble and Eb-drawing, 7th International Conference on Materials for Advanced Technologies (ICMAT), 2013
• TiSiN Films by Reactive RF Magnetron Co-Sputtering for Ultra-Low-Current Phase-Change Memory, 5th International Conference on Mechanical and Electrical Technology (ICMET 2013), 2013
• Evaluation of ordering of block copolymers with pre-patterned guides for bit patterned media, SPIE Advanced Lithography 2012, 2012
• Multi-Level Storage Phase-Change Memory, 2012 International Conference on Mechatronics and Intelligent Materials, 2012
• Coercive force enhanced by nanometer-sizing of magnetic column and measured by X-ray magnetic circular dichroism (XMCD), 2012 International Conference on Mechatronics and Intelligent Materials, 2012
• Low-stress high-crystallization-temperature doped GeTe for improving performance of phase-change memory, the 38th International Micro & Nano Engineering Conference (MNE 2012), 2012
• Fabrication of Ultrahigh Density 10-nm-order Sized C Nanodot Array as a Pattern-transfer Mask, 26th International Microprocesses and Nanotechnology Conference (MNC 2013), 2013
• Ultralow-write-current Nano-contact Phase-change Memory, 26th International Microprocesses and Nanotechnology Conference (MNC 2013), 2013
• Fabrication of Ultrahigh Density 10-nm-Order Sized Si Nanodot Array by Pattern-Transfer of Block Copolymer Self-Assembled Nanodots, 8th NANOSMAT, 2013
• Large Area Ultrahigh Density 10-nm-Order Sized C Nanodot Array as a Pattern-Transfer Mask, the 39th International Micro & Nano Engineering Conference (MNE 2013), 2013
• Staircase pulse programming for recrystallization control in phase-change memory, the 39th International Micro & Nano Engineering Conference (MNE 2013), 2013
• Nano-contact phase-change memory for ultralow writing reset current, the 39th International Micro & Nano Engineering Conference (MNE 2013), 2013
• Multi-level Storage in Lateral Multi-layer and Single Layer Phase-change Memory, 2011 MRS Spring Meeting, 2011
• Piezoresistive Acceleration Sensor with High Sensitivity and High Responsiveness, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011
• Long-range-ordering of Nanodot Arrays using Self-assembly and Post and Line Mixing Templates, The 4th Nanoscience and Nanosmposium, 2011
• Nanometer-size effect of the coercive force of fine magnetic column measured by X-ray magnetic circular dichroism (XMCD), 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011
• The Effect of Salt Development for Forming HSQ Resist Nanodot Arrays with a Pitch of 15 × 15 nm2 by 30-keV EB drawing, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011
• Improved Observation Contrast of Blockcopolymer Nanodot Pattern Using Carbon Hard Mask (CHM), 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011
• A Novel Phase-Change Memory with a Separate Heater Characterized by a Constant Resistance for Multilevel Storage, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011
• Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011
• Multi-Level Storage in Lateral Phase-Change Memory: from 3 to 16 Resistance Levels, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011
• Random access multi-levels phase changing using pulse modulation, the 23rd Symposium on Phase Change Optical Information Storage (PCOS2011), 2011
• 高密度パターンドメディアのための電子線描画ポスト格子とガイドラインによる自己組織化パターンの規則配列制御, 2010年秋季 第71回 応用物理学会学術講演会（長崎大学）, 2010
• 高密度磁気記録のためのブロック共重合体による自己組織化10nmナノドット形成, 2010年秋季 第71回 応用物理学会学術講演会（長崎大学）, 2010
• 30-KeV電子線描画法を用いた3 Tbit/in.2（ピッチ15 nm）超高密度磁気記録用ドット列の形成, 2011年秋季 第72回 応用物理学会学術講演会（山形大学）., 2011
• Observation of Nanometer-Sized Magnetization of PtCo Magnetic Dot Arrays Using Scanning Near-Field Polarization Microscopy, the 40th International Micro & Nano Engineering Conference (MNE 2014), 2014
• Single-nanodot Arrays and Single-nanohalf-pitch Lines Formed using PS-PDMS Self-assembly and Electron Beam Drawing, 26th International Microprocesses and Nanotechnology Conference (MNC 2013), 2013
• Nano-contact for small power consumption in phase change memory, The 25th Symposium on Phase Change Oriented Science, 2013
• Electron Beam Lithography for Fabrication of Nano Phase-Change Memory, 2013 2nd International Symposium on Quantum, Nano and Micro Technologies (ISQNM 2013), 2013
• Scanning Near-field Polarization Microscopy for magnetization of nanometer-sized magnetic column, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013
• Computational analysis of heavy ion-DNA interaction using molecular dynamics method, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013
• Nano-contact phase-change memory, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013
• Observation of magnetic nanodot arrays by using scanning near-field polarization microscope, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013
• Fabrication of Ultrahigh Density 10-nm-Order Sized Si Nanodot Array by Pattern-Transfer of Block Copolymer Self-Assembled Nanodot Array, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013
• Prototype of atomic force microscope with high resolution optical microscope for observing of magnetic nanodot arrays, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013
• Long Range Ordering of Nanodots with Sub-10-nm-Pitch and 5-nm-dot Size using EB-drawn Guide Line and Self-assembly of Polystyrene-Poly(dimethyl siloxane), 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013
• Reduction of Write Current in Phase-Change Memory by Incorporating Self-Assembled Nanostructures, the 23rd Australian Conference on Microscopy and Microanalysis (ACMM23) and the International Conference on Nanoscience and Nanotechnology (ICONN 2014), 2014
• N-doped GeTe for High-Performance Phase-Change Memory, the 23rd Australian Conference on Microscopy and Microanalysis (ACMM23) and the International Conference on Nanoscience and Nanotechnology (ICONN 2014), 2014
• Ultra-Multilevel-Storage Phase-Change Memory, 2014 International Conference on Materials Science and Engineering Technology (MSET 2014), 2014
• Modification of GeTe Chalcogenide by N-doping for High-Performance Nonvolatile Phase-Change Memory, 3rd International Conference on Advanced Materials and Practical Nanotechnology (3rd ICAMPN), 2014
• Observation of Nanometer-Sized Magnetic Dots and its Magnetization using a Scanning Near-Field Polarization Microscopy, 3rd International Conference on Advanced Materials and Practical Nanotechnology (3rd ICAMPN), 2014
• Multilevel Storage and its Cycling in Ge1Sb4Te7 Phase-Change Memory, The International Conference on Solid State Devices and Materials (SSDM2014), 2014
• Ultramultiple-level storage in Ge1Sb4Te7-based phase-change memory, the 40th International Micro & Nano Engineering Conference (MNE 2014), 2014
• Ultrasmall-Volume-Change Chalcogenide for Performance Improvement of Phase-Change Memory, 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2014), 2014
• Characterization of N-Doped GeTe Films and Their Applications to High-Performance Nano Phase-Change Memory, 27th International Microprocesses and Nanotechnology Conference (MNC 2014), 2014
• Ge1Sb4Te7 Ultra-Multi-Level Phase-Change Memory, 27th International Microprocesses and Nanotechnology Conference (MNC 2014), 2014
• Measurement of Magnetic Nanodot Arrays Using Scanning Near-Field Polarization Microscope, 27th International Microprocesses and Nanotechnology Conference (MNC 2014), 2014
• N-doped GeTe Chalcogenide Film for High-Performance Nonvolatile Phase-Change Memory, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014
• Low-Reset-Current Ring-Confined-Chalcogenide Phase-Change Memory, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014
• Ge1Sb2Te4-based N-doped Chalcogenide for Application to Multi-Level-Storage Phase-Change Memory, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014
• Magnetization of magnetic nanodots measured using a near-field polarization optical scanning microscope, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014
• Thickness Dependence On Ordering Of Dots And Lines Along EB-drawn Guide Lines Using Self-assembly Of Polystyrene-Poly(dimethyl-siloxane), 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014
• Magnetization Imaging of Magnetic Nanodot Using Scanning Near-field Polarization Microscopy Under External Magnetic Field, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014
• Fabrication of Nanometer-sized Magnetic Dots and Their Magnetic Property, 8th International Conference on Materials for Advanced Technologies (ICMAT2015), 2015
• Ultrahigh-density Multilevel-storage Nano Phase-change Memory Array, 8th International Conference on Materials for Advanced Technologies (ICMAT2015), 2015
• Oxygen-Doped Sb2Te3 for Low-Power-Consumption Phase-Change Memory, 8th International Conference on Materials for Advanced Technologies (ICMAT2015), 2015
• Localization of Joule Heating in Phase-Change Memory with Incorporated Insulating Nanostructures and Nanolayer for Ultralow Operation Current, the International Conference on Nanoscience and Technology, China 2015 (ChinaNANO 2015), 2015
• Characterization of Ge1Sb4Te7 Chalcogenide for its Application to Synaptic Device, the International Conference on Nanoscience and Technology, China 2015 (ChinaNANO 2015), 2015
• Ordering of either nano-dot arrays or nano-lines along EB-drawn resist guide lines using PS-PDMS self-assembly with a molecular weight of 1.46 kg/mol, the 41st International Micro & Nano Engineering Conference (MNE 2015), 2015
• Properties of Ge1Sb4Te7 and its application to two terminal synaptic device, the 41st International Micro & Nano Engineering Conference (MNE 2015), 2015
• Nano-contact phase-change memory with nanostructures and a highly-resistive thin layer, the 41st International Micro & Nano Engineering Conference (MNE 2015), 2015
• Nanoscale Localized Joule Heating in Phase-Change Memory for Ultra-Low Operation Current, 28th International Microprocesses and Nanotechnology Conference (MNC 2015), 2015
• Sub 10 ns Fast Switching and Resistance Control in Lateral GeTe-Based Phase-Change Memory, 28th International Microprocesses and Nanotechnology Conference (MNC 2015), 2015
• Challenge to Control 5-nm-sized Dot Arrays with a Pitch of <10 nm in a Long-range Order along EB-drawn Guide Lines Using PS-PDMS Self-assembly, 28th International Microprocesses and Nanotechnology Conference (MNC 2015), 2015
• LabVIEW-Controlled Scanning Near-Field Polarization Microscope, The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (11th RASEDA) and The 7th International Conference on Advanced Micro-Device Engineering (7th AMDE), 2015
• Low Power Phase Change Memory via Block Copolymer Self-assembly Technology, 2013 MRS Spring Meeting, 2013
• Proposal of memory transistor using a phase change and nano-size effects for high density memory array, Proc. 15th Symp. Phase Change Opt. Inform. Storage (Ed. M. Okuda), 2003
• Pico-Newton Controlled Step-in Mode NC-AFM Using a Quadrature Demodulator and a Slim Probe in Air for CD-AFM, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010
• Fabrication of Nanometer Sized Si Dot Arrays Using Reactive Ion Etching with Metal Dot Arrays, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010
• Monte Carlo Simulation of Electron Scattering Processes for High-Resolution Electron Beam Lithography, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010
• Guide Pattern Functionalization for Regularly Arranged PS-PDMS Self-Assembled Nanodot Pattern by Brush Processing, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010
• Formation of 12-nm Nanodot Pattern by Diblock Copolymer Self-Assembly Technique, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010
• Random-Access Multilevel Storage in Phase-Change Memory by Staircase-Like Pulse Programming, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010
• Challenge to form 25x25 nm2 pitch dot on magnetic thin film on glass substrate for 1 Tb/in2 magnatic strage, 2nd International Workshop on Nanotechnology, 2009
• Near-filed Raman spectroscopy using illumination-collection mode with typical AFM pyramidal probe, 2nd International Workshop on Nanotechnology, 2009
• Multiple-Level Storage in N-doped-SbTe Phase-Change Memory with an Additional Top TiN Layer, 2nd International Workshop on Nanotechnology, 2009
• Research activities on nanotechnology in Hosaka Lab, 2nd International Workshop on Nanotechnology, 2009
• Small consumption power and multi-level storage in lateral type phase-change memory with a top heater, PCOS 2008, 2008
• Fabrication of fine magnetic column arrays by 30 keV EB lithography and ion-milling, 34th International Conference on Micro- and Nano-Engineering 2008, 2008
• Low power writing in lateral type phase-change memory, 2008 European/Phase Change and Ovonics Symposium, 2008
• Multi-level-storage in lateral SbTeN-based phase-change memory with an additional top TiN layer, Extended Abstracts of the International Conference on Solid State Devices and Materials, 2008
• 20 nm x 20 nm pitch fine dot arrays formed by 30 keV EB lithography and ion-milling, MRS International Materials Research Conference 2008, 2008
• Formation of 20 nm x 20 nm fine pitch dot arrays by 30 keV EB lithography, The International MRS 2008 Conference Beijing AAA Satellite Meeting on Advanced Technologies for Advanced Characterizations of Advanced Materials, 2008
• Reactively sputtered Ti-Si-N films for application to heating layer in low-current phase-change memory, MRS International Materials Research Conference 2008, 2008
• Ultramultiple-level storage in N-doped-Sb2Te3 phase-change memory with an additional top TIN layer, The International MRS 2008 Conference Beijing AAA Satellite Meeting on Advanced Technologies for Advanced Characterizations of Advanced Materials, 2008
• Nanometer scale studies of phase-change material using NC-AFM, XRD, and TEM, The 2nd Gunma International Symposium on Chemistry, 2007
• Direct and indirect heating of low power lateral type PCMD, 1st Surface and Nano Science Workshop, 2007
• Nano-dot arrays with a pitch of 25 nm x 25nm written by EB writer for over 1 Tb/in2 storage, 1st Surface and Nano Science Workshop, 2007
• Characteristics of N-doped Sb2Te3 Films by X-Ray Diffraction and Resistance Measurement for Phase-Change Memory, 2007 MRS Spring Meeting, 2007
• UHV NC-AFM Observation of Surface Structure and Grain Size Changes of Ge2Sb2Te5 Films by Annealing Effect, The 14th International Colloquium on Scanning Probe Microscopy, 2006
• A Novel Multi-Channel Phase-Change Memory Cell for Multi-State Storage with High Controllability, 8th Intern. Conf. on Solid-State and Integrated Circuit Technology, 2006
• Thickness Dependences of Phase Change and Channel Current Control in Phase-Change Channel Transistor, 2005 IEEE International Conference on Electron Devices and Solid-State Circuits, 2005
• Annealing effect of phase change and current control in phase change channel transistor memory, 2005 Intern. Conf. Solid State Devices and Materials (SSDM 2005), 2005
• Electric properties of thin GeSbTe and AgInSbTe films by annealing, 16th Symposium Phase Change Optical Information Storage PCOS 2004, 2004
• Large Resistance Ratio for High Reliability of Multi-Level Storage in Phase-Change Memory, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009
• Guide Pattern for Long-Range-Order Nanofabrication of Self-Assembled Block Copolymers, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009
• Self-Assembled Nanodot Fabrication by Using Diblock Copolymer, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009
• Fabrication of Si Dot Arrays by EB Lithography and Dry Etching for Quantum Dot Solar Cells, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009
• Prototype of illumination-collection mode scanning near-field optical microscopy and Raman spectroscopy with aperture-less pyramidal probe, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009
• Material engineering in phase-change memory for low power consumption and multi-level storage, the 5th Interna-tional Conference on Electron Devices and Solid State Circuits, 2009
• Multi-Level Storage in Lateral Phase-Change Memory, the International Conference on Nanoscience and Technology, China 2009 (ChinaNANO 2009), 2009
• Nano magnetic column arrays fabrication for patterned media in magnetic recording using EB lithography and ion milling, the 5th Interna-tional Conference on Electron Devices and Solid State Circuits, 2009
• Nano magnetic column arrays fabrication for patterned media in magnetic recording using EB lithography and ion milling, the International Conference on Nanoscience and Technology, China 2009 (ChinaNANO 2009), 2009
• Research on low power consumption and multi-level storage in phase-change memory, the 2nd NSC-JST Nano Device Workshop, 2009
• Challenge to form 25 × 25 nm2 pitch dot on magnetic thin film on glass substrate for 1Tb/in2 magnetic storage, 2nd International Workshop on Nanotechnology, 2009
• Ultra low operation current lateral phase-change memory, the International Conference on Solid State Devices and Materials, 2006
• Lateral type phase-change memory with top heater for low-power consumption, 2nd International Workshop on Nanotechnology, 2009
• Nano-dot and pit arrays with a pitch of 25 nm x 25 nm fabricated by EB drawing, RIE and nano-imprinting toward 1 Tb/ in2 storage, 2nd international symposium on MONODZUKURI, 2009
• Fabrication of dot arrays by EB lithography for quantum dot solar cell, 2nd international symposium on MONODZUKURI, 2009
• Fine dot pattern formation on magnetic film for high density magnetic storage, 2nd international symposium on MONODZUKURI, 2009
• Research on low power consumption and multi-level storage in phase-change memory, 2nd international symposium on MONODZUKURI, 2009
• Low power lateral phase-change memory, 2nd international symposium on MONODZUKURI, 2009
• Characterization of N-Doped Chalcogenide Film for Application to Phase-Change Memory as Next-Generation Memory, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010
• Multi-level storage in phase-change memory: from multi-layer to single layer, The 22nd Symposium on Phase Change Optical Information Storage (PCOS2010), 2010
• Long-range-ordering of nanodot arrays using self-assembled block copolymers with EB drawn guide post and line mixing templates, The 36th International Conference on Micro & Nano Engineering (MNE), 2010
• Multilevel storage in lateral phase-change memory by promotion of nanocrystallization, The 36th International Conference on Micro & Nano Engineering (MNE), 2010
• Multi-levels phase change memory using pulse modulation, EPCOS 2010, 2010
• Step-in mode NC-AFM for CD measurement of fine structure in air, The 13th International Conference on Non-Contact Atomic Force Microscopy, 2010
• Measurement of Local Stress Distribution in Fine Silicon Gate Using Illumination-Collection Mode Scanning Near-Field Optical Microscopy and Raman Spectroscopy, The 7h International Forum on Advanced Material Science and Technology, 2010
• Ultramultiple-multi-level storage in SbTeN-based phase-change memory, The 7h International Forum on Advanced Material Science and Technology, 2010
• Observation of Si pattern sidewall using inclination AFM for evaluation of line edge roughness, TBN 2008, 2008
• In Situ SEM Observation of Grain Formation and Growth Induced by Electrical Pulses in Lateral Ge2Sb2Te5 Phase-Change Memory, 2007 MRS Spring Meeting, 2007
• Scanning Near-field Raman spectroscopy (SNRS) to detect the stress distribution for high spatial resolution, 2nd international symposium on MONODZUKURI, 2009
• Coercive force enhanced by nanaometer-sizing of magnetic column for patterned media and measured by X-ray magnetic circular dichroism in SR, the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), 2011
• Electron Beam Lithography for 10-nm-Wide Nanowire Phase-Change Memory, 2011 MRS Spring Meeting, 2011
• Diblock Copolymer Self-Assembled Nanodots for Next-Generation Magnetic Recording, the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), 2011
• Estimation of Nanometer-Scale Patterning of Calixarene Resist in Electron Beam Lithography, the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), 2011
• Formation of 13-nm-Pitch Block Copolymer Self-Assembled Nanodots Pattern for High-Density Magnetic Recording, The 4th Nanoscience and Nanosmposium, 2011
• 10-nm-Order-Wide Nanowire Phase-Change Memory, the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), 2011
• Ordering of 12 nm-pitched nanodot arrays using block copolymers self-assemble and EB drawn guide line template for 5 Tbit/in2 magnetic recording, the 38th International Micro & Nano Engineering Conference (MNE 2012), 2012
• Controlled promotion of crystallization for multilevel phase-change memory, the 38th International Micro & Nano Engineering Conference (MNE 2012), 2012
• Current-driven crystallization promotion for multilevel storage in phase-change memory, The 24th Symposium on Phase Change Oriented Science (PCOS 2012), 2012
• Pattern Transfer of 23-nm-Diameter Block Copolymer Self- Assembled Nanodots Using CF4 etching with Carbon Hard Mask (CHM) as Mask, Nanotechnology Applications in Energy and Environment (NAEE2012), 2012
• Fast Operation and Resistance Control in GeTe-Based Lateral Phase Change Memory, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
• Fusion of top-down and bottom-up technologies for single nano-patterning, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
• Fabrication of CoPt Nanodot Array with a Pitch of 33 nm Using Pattern-Transfer Technique of PS-PDMS Self-Assembly, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
• Fabrication of Carbon Nanodot Arrays with a Pitch of 20 nm for Pattern-Transfer of PDMS Self-Assembled nanodots, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
• Ordering of Self-Assembled Nanodots Improved by Guide Pattern with Low Line Edge Roughness for 5 Tbit/in.2 Patterned Media, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
• A New Modeling of Calculating Resist Profile Based on Energy Deposition Distribution in Electron Beam Lithography, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
• Controlled Crystallization Process of Phase-change Memory device by a Separate Heater Structure, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
• Fabrication of 25-nm-Pitched CoPt Magnetic Dot Arrays using 30-keV-Electron Beam Drawing, RIE and Ion milling, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012
• Challenge to form the 10-nm-order pitch of self-assembled nanodots using PS-PDMS block copolymer, the Sixth International Conference on Advanced Materials and Nanotechnology (AMN6), 2013
• Nanometer effect of dot diameter for 40 nm magnetic dot pitch for patterned media prepared by EBL and ion milling and measured by Micro X-Ray Magnetic Circular Dichroism, the Sixth International Conference on Advanced Materials and Nanotechnology (AMN6), 2013
• Low-Volume-Change High-Crystallization-Temperature Phase-Change Material for High-Performance Phase-Change Memory by N-Doping into GeTe, 2013 MRS Spring Meeting, 2013
• Fast Operation and Freely Achievable Multiple Resistance Levels in GeTe-Based Lateral Phase Change Memory, 2013 MRS Spring Meeting, 2013
• Simulation of Fine Resist Profile Formation by Electron Beam Drawing and Development with Solubility Rate Based on Energy Deposition Distribution, 7th International Conference on Materials for Advanced Technologies (ICMAT), 2013
• Long-range Ordering of 6-nm-sized Nanodot Arrays Using Self-assemble and Eb-drawing, 7th International Conference on Materials for Advanced Technologies (ICMAT), 2013
• TiSiN Films by Reactive RF Magnetron Co-Sputtering for Ultra-Low-Current Phase-Change Memory, 5th International Conference on Mechanical and Electrical Technology (ICMET 2013), 2013
• Evaluation of ordering of block copolymers with pre-patterned guides for bit patterned media, SPIE Advanced Lithography 2012, 2012
• Multi-Level Storage Phase-Change Memory, 2012 International Conference on Mechatronics and Intelligent Materials, 2012
• Coercive force enhanced by nanometer-sizing of magnetic column and measured by X-ray magnetic circular dichroism (XMCD), 2012 International Conference on Mechatronics and Intelligent Materials, 2012
• Low-stress high-crystallization-temperature doped GeTe for improving performance of phase-change memory, the 38th International Micro & Nano Engineering Conference (MNE 2012), 2012
• Fabrication of Ultrahigh Density 10-nm-order Sized C Nanodot Array as a Pattern-transfer Mask, 26th International Microprocesses and Nanotechnology Conference (MNC 2013), 2013
• Ultralow-write-current Nano-contact Phase-change Memory, 26th International Microprocesses and Nanotechnology Conference (MNC 2013), 2013
• Fabrication of Ultrahigh Density 10-nm-Order Sized Si Nanodot Array by Pattern-Transfer of Block Copolymer Self-Assembled Nanodots, 8th NANOSMAT, 2013
• Large Area Ultrahigh Density 10-nm-Order Sized C Nanodot Array as a Pattern-Transfer Mask, the 39th International Micro & Nano Engineering Conference (MNE 2013), 2013
• Staircase pulse programming for recrystallization control in phase-change memory, the 39th International Micro & Nano Engineering Conference (MNE 2013), 2013
• Nano-contact phase-change memory for ultralow writing reset current, the 39th International Micro & Nano Engineering Conference (MNE 2013), 2013
• Multi-level Storage in Lateral Multi-layer and Single Layer Phase-change Memory, 2011 MRS Spring Meeting, 2011
• Piezoresistive Acceleration Sensor with High Sensitivity and High Responsiveness, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011
• Long-range-ordering of Nanodot Arrays using Self-assembly and Post and Line Mixing Templates, The 4th Nanoscience and Nanosmposium, 2011
• Nanometer-size effect of the coercive force of fine magnetic column measured by X-ray magnetic circular dichroism (XMCD), 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011
• The Effect of Salt Development for Forming HSQ Resist Nanodot Arrays with a Pitch of 15 × 15 nm2 by 30-keV EB drawing, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011
• Improved Observation Contrast of Blockcopolymer Nanodot Pattern Using Carbon Hard Mask (CHM), 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011
• A Novel Phase-Change Memory with a Separate Heater Characterized by a Constant Resistance for Multilevel Storage, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011
• Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011
• Multi-Level Storage in Lateral Phase-Change Memory: from 3 to 16 Resistance Levels, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011
• Random access multi-levels phase changing using pulse modulation, the 23rd Symposium on Phase Change Optical Information Storage (PCOS2011), 2011
• Observation of Nanometer-Sized Magnetization of PtCo Magnetic Dot Arrays Using Scanning Near-Field Polarization Microscopy, the 40th International Micro & Nano Engineering Conference (MNE 2014), 2014
• Single-nanodot Arrays and Single-nanohalf-pitch Lines Formed using PS-PDMS Self-assembly and Electron Beam Drawing, 26th International Microprocesses and Nanotechnology Conference (MNC 2013), 2013
• Nano-contact for small power consumption in phase change memory, The 25th Symposium on Phase Change Oriented Science, 2013
• Electron Beam Lithography for Fabrication of Nano Phase-Change Memory, 2013 2nd International Symposium on Quantum, Nano and Micro Technologies (ISQNM 2013), 2013
• Scanning Near-field Polarization Microscopy for magnetization of nanometer-sized magnetic column, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013
• Computational analysis of heavy ion-DNA interaction using molecular dynamics method, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013
• Nano-contact phase-change memory, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013
• Observation of magnetic nanodot arrays by using scanning near-field polarization microscope, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013
• Fabrication of Ultrahigh Density 10-nm-Order Sized Si Nanodot Array by Pattern-Transfer of Block Copolymer Self-Assembled Nanodot Array, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013
• Prototype of atomic force microscope with high resolution optical microscope for observing of magnetic nanodot arrays, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013
• Long Range Ordering of Nanodots with Sub-10-nm-Pitch and 5-nm-dot Size using EB-drawn Guide Line and Self-assembly of Polystyrene-Poly(dimethyl siloxane), 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013
• Reduction of Write Current in Phase-Change Memory by Incorporating Self-Assembled Nanostructures, the 23rd Australian Conference on Microscopy and Microanalysis (ACMM23) and the International Conference on Nanoscience and Nanotechnology (ICONN 2014), 2014
• N-doped GeTe for High-Performance Phase-Change Memory, the 23rd Australian Conference on Microscopy and Microanalysis (ACMM23) and the International Conference on Nanoscience and Nanotechnology (ICONN 2014), 2014
• Ultra-Multilevel-Storage Phase-Change Memory, 2014 International Conference on Materials Science and Engineering Technology (MSET 2014), 2014
• Modification of GeTe Chalcogenide by N-doping for High-Performance Nonvolatile Phase-Change Memory, 3rd International Conference on Advanced Materials and Practical Nanotechnology (3rd ICAMPN), 2014
• Observation of Nanometer-Sized Magnetic Dots and its Magnetization using a Scanning Near-Field Polarization Microscopy, 3rd International Conference on Advanced Materials and Practical Nanotechnology (3rd ICAMPN), 2014
• Multilevel Storage and its Cycling in Ge1Sb4Te7 Phase-Change Memory, The International Conference on Solid State Devices and Materials (SSDM2014), 2014
• Ultramultiple-level storage in Ge1Sb4Te7-based phase-change memory, the 40th International Micro & Nano Engineering Conference (MNE 2014), 2014
• Ultrasmall-Volume-Change Chalcogenide for Performance Improvement of Phase-Change Memory, 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2014), 2014
• Characterization of N-Doped GeTe Films and Their Applications to High-Performance Nano Phase-Change Memory, 27th International Microprocesses and Nanotechnology Conference (MNC 2014), 2014
• Ge1Sb4Te7 Ultra-Multi-Level Phase-Change Memory, 27th International Microprocesses and Nanotechnology Conference (MNC 2014), 2014
• Measurement of Magnetic Nanodot Arrays Using Scanning Near-Field Polarization Microscope, 27th International Microprocesses and Nanotechnology Conference (MNC 2014), 2014
• N-doped GeTe Chalcogenide Film for High-Performance Nonvolatile Phase-Change Memory, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014
• Low-Reset-Current Ring-Confined-Chalcogenide Phase-Change Memory, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014
• Ge1Sb2Te4-based N-doped Chalcogenide for Application to Multi-Level-Storage Phase-Change Memory, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014
• Magnetization of magnetic nanodots measured using a near-field polarization optical scanning microscope, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014
• Thickness Dependence On Ordering Of Dots And Lines Along EB-drawn Guide Lines Using Self-assembly Of Polystyrene-Poly(dimethyl-siloxane), 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014
• Magnetization Imaging of Magnetic Nanodot Using Scanning Near-field Polarization Microscopy Under External Magnetic Field, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014
• Fabrication of Nanometer-sized Magnetic Dots and Their Magnetic Property, 8th International Conference on Materials for Advanced Technologies (ICMAT2015), 2015
• Ultrahigh-density Multilevel-storage Nano Phase-change Memory Array, 8th International Conference on Materials for Advanced Technologies (ICMAT2015), 2015
• Oxygen-Doped Sb2Te3 for Low-Power-Consumption Phase-Change Memory, 8th International Conference on Materials for Advanced Technologies (ICMAT2015), 2015
• Localization of Joule Heating in Phase-Change Memory with Incorporated Insulating Nanostructures and Nanolayer for Ultralow Operation Current, the International Conference on Nanoscience and Technology, China 2015 (ChinaNANO 2015), 2015
• Characterization of Ge1Sb4Te7 Chalcogenide for its Application to Synaptic Device, the International Conference on Nanoscience and Technology, China 2015 (ChinaNANO 2015), 2015
• Ordering of either nano-dot arrays or nano-lines along EB-drawn resist guide lines using PS-PDMS self-assembly with a molecular weight of 1.46 kg/mol, the 41st International Micro & Nano Engineering Conference (MNE 2015), 2015
• Properties of Ge1Sb4Te7 and its application to two terminal synaptic device, the 41st International Micro & Nano Engineering Conference (MNE 2015), 2015
• Nano-contact phase-change memory with nanostructures and a highly-resistive thin layer, the 41st International Micro & Nano Engineering Conference (MNE 2015), 2015
• Nanoscale Localized Joule Heating in Phase-Change Memory for Ultra-Low Operation Current, 28th International Microprocesses and Nanotechnology Conference (MNC 2015), 2015
• Sub 10 ns Fast Switching and Resistance Control in Lateral GeTe-Based Phase-Change Memory, 28th International Microprocesses and Nanotechnology Conference (MNC 2015), 2015
• Challenge to Control 5-nm-sized Dot Arrays with a Pitch of <10 nm in a Long-range Order along EB-drawn Guide Lines Using PS-PDMS Self-assembly, 28th International Microprocesses and Nanotechnology Conference (MNC 2015), 2015
• LabVIEW-Controlled Scanning Near-Field Polarization Microscope, The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (11th RASEDA) and The 7th International Conference on Advanced Micro-Device Engineering (7th AMDE), 2015
• Low Power Phase Change Memory via Block Copolymer Self-assembly Technology, 2013 MRS Spring Meeting, 2013
• Proposal of memory transistor using a phase change and nano-size effects for high density memory array, Proc. 15th Symp. Phase Change Opt. Inform. Storage (Ed. M. Okuda), 2003
• Proposal of a Novel Operation Method to Precisely Control Synaptic Strength for Phase-Change Artificial Synapse, Y. Yin, International Conference on Technology and Social Science 2020 (ICTSS2020), Dec. 2020, Dec. 2020
• Nanofabrication for Quantum Dot Solar Cell with High Conversion Efficiency, Y. Yin, International Conference on Technology and Social Science 2020 (ICTSS2020), Dec. 2020, Dec. 2020
• Vertical Stack MIM Diode Design for Optical Rectenna, T. Akahane; K. Yanagisawa; Y. Yin, 33rd International Microprocesses and Nanotechnology Conference (MNC 2020), Oct. 2020, Oct. 2020, Oct. 2020
• Chalcogenides and their applications to advanced phase-change-devices toward future IoT era, Y. Yin; W. Matsuhashi; K. Niiyama; D. Nishijo; K. Sawao, 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2020), Oct. 2020, Oct. 2020
• C-N-Codoped Sb2Te3 Chalcogenidesfor Reducing Power Consumption of Phase-Change Devices, Y. Yin, 32nd International Microprocesses and Nanotechnology Conference (MNC 2019), Oct. 2019, Oct. 2019, Oct. 2019
• Block-copolymer-based Nanostructure Fabrication and Its Application to Low-power Phase-change Memory, Y. Yin, 32nd International Microprocesses and Nanotechnology Conference (MNC 2019), Oct. 2019, Oct. 2019, Oct. 2019
• Control of self-assembled nanodot array orientation using electron beam drawing, T. Akahane; Y. Yin, 4th International Conference on Advanced Engineering and Its Education in 2019 (4th ICAEE 2019), Sep. 2019, Sep. 2019
• N-Doped GeTe for Highly Reliable Phase-Change Device, S. Yahagi; Y. Yin, 11th International Science, Social Sciences, Engineering and Energy Conference (I-SEEC 2022) and 6th International Conference on Technology and Social Science 2022 (ICTSS 2022), Dec. 2022
• Undoped and Doped Zn5Sb3Te Chalcogenides for Use in Phase-Change Device with High Thermal Stability, Y. Yin; T. Fujiwara; K. Niiyama; S. Yahagi, 11th International Science, Social Sciences, Engineering and Energy Conference (I-SEEC 2022) and 6th International Conference on Technology and Social Science 2022 (ICTSS 2022), Dec. 2022
• MIM diode with HSQ insulating thin film for optical rectenna, T. Akahane; S. Ishii; K. Yanagisawa; Y. Yin, 35th International Microprocesses and Nanotechnology Conference (MNC 2022), Nov. 2022
• N-Ti Codoped Zn5Sb3Te1 Chalcogenide for Artificial Synaptic Functional Material, T. Fujiwara; K. Niiyama; Y. Yin, 35th International Microprocesses and Nanotechnology Conference (MNC 2022), Nov. 2022
• Recent Progress in Phase Change Materials and Devices, Y. Yin; K. Niiyama; T. Fujiwara; R. Shirakawa; S. Yahagi; M. Miuchi, 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2022), 2022
• Doped Sb2Te3 Phase-Change Materials for High Performance Artificial Synaptic Device, Y. Yin; K. Niiyama; W. Matsuhashi; T. Fujiwara, International Conference on Technology and Social Science 2021 (ICTSS2021), Dec. 2021
• Finite Element Analysis of Phase-Change Device with Incorporated Nanostructures for Lowering Writing Current, R. Shirakawa; Y. Yin, International Conference on Technology and Social Science 2021 (ICTSS2021), Nov. 2021
• Structural analysis for lowering writing current of phase-change device with nanostructure by finite element method, R. Shirakawa; Y. Yin, The 4th International Conference on Memristive Materials, Devices & Systems (MEMRISYS), Nov. 2021
• N-O co-doped Sb2Te3 chalcogenide memristive material, K. Niiyama; Y. Yin, The 4th International Conference on Memristive Materials, Devices & Systems (MEMRISYS), Nov. 2021
• C-N-codoped Sb2Te3 chalcogenides for high-performance phase-change devices, Y. Yin, The 4th International Conference on Memristive Materials, Devices & Systems (MEMRISYS), Nov. 2021
• Pulse programming method for phase-change artificial synapse, Y. Yin, The 4th International Conference on Memristive Materials, Devices & Systems (MEMRISYS), Nov. 2021
• Chalcogenides for Their Application to Phase-Change-Memory-Based Synaptic Devices, Y. Yin; K. Niiyama; W. Matsuhashi; R. Shirakawa; T. Fujiwara; K. Sawao, 2021 IEEE 14th International Conference on ASIC (ASICON 2021), Oct. 2021
• N-O Co-Doped Sb2Te3 Chalcogenide for High Performance Artificial Synaptic Device, Y. Yin; K. Niiyama; T. Fujiwara, 34th International Microprocesses and Nanotechnology Conference (MNC 2021), Oct. 2021
• Ordered Nanodot Array Fabrication for Quantum Dot Solar Cell, Y. Yin; K. Yanagisawa; T. Akahane; R. Mayuzumi, 34th International Microprocesses and Nanotechnology Conference (MNC 2021), Oct. 2021
• 太陽光発電素子のためのナノ加工技術に関する研究, 赤羽 隆志; 石井 翔; 尹 友, The 18th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, Nov. 2022
• 熱安定性改善のためのZn5Sb3Te1にNとTiをコドープした新規相変化材料の開発, 藤原 貴生; 尹 友, The 18th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, Nov. 2022
• 人工シナプス素子の高性能化に向けたN-OコドープSb2Te3相変化材料の開発, 新山 浩司; 尹 友, 2022年春季第69回 応用物理学会学術講演会, Mar. 2022
• 局所的電流密度増強による相変化素子の低動作電流化, 白川 遼馬; 尹 友, The 18th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers, Nov. 2021
• シナプス素子の高性能化に向けたN-OコドープSb2Te3新相変化材料の開発, 新山 浩司; 尹 友, The 18th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, Nov. 2021
• TiOxナノ粒子を用いたフレキシブル抵抗センサの試作と機能実証, 茂木 勇成; 尹 友, The 18th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, Nov. 2021
• Sb2Te3へのC-Nコドーピングによる相変化デバイス書き込み電流の削減”, 松橋 航; 尹 友, The 18th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers, Nov. 2021
• ナノ構造を有する相変化素子の低動作電流化のための有限要素法解析, 白川 遼馬; 尹 友, 2021年秋季 第82回 応用物理学会学術講演会, Sep. 2021
• MIMダイオード構造を備えた光レクテナの設計と電磁界シミュレーション, 栁澤 圭亮; 赤羽 隆志; 尹 友, The 17th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, Nov. 2020
• 情報記録素子の高性能化のための相変化材料の開発, 尹 友, 技術開発と人材育成に関する交流会, Jan. 2020
• Characterization of Doped Sb3Te and its Application to Phase-change Device, You Yin, 2025 IEEE the 14th International Conference on Communications, Circuits, and Systems (ICCCAS 2025), May 2025
• 光レクテナのためのスピンコート法を用いたMIMダイオードの作製, 石井 翔; 栁澤 圭亮; 赤羽 隆志; 尹 友, 2025年第72回応用物理学会春季学術講演会, Mar. 2025
• OドープGeTe/Sb2Te3多層膜相変化材料の開発, 美内 睦美; 松田 和希; 吉本 匠汰; 澤井 英志; 尹 友, 2025年第72回応用物理学会春季学術講演会, Mar. 2025
• 相変化デバイス高性能化のためのNドープによるSb3Te相変化材料の熱安定性向上, 吉本 匠汰; 矢矧 俊祐; 美内 睦美; 尹 友, 2025年第72回応用物理学会春季学術講演会, Mar. 2025
• Vacancy-introduced GeTe/Sb2Te3 superlattice material, E. Sawai; M. Miuchi; Y. Yin, International Conference on Technology and Social Science 2024 (ICTSS2024), Dec. 2024
• ZrOx and HfOx Thin films and Their Application to ReRAM Devices, T. Miyata; R. Harakawa; Y. Yin, International Conference on Technology and Social Science 2024 (ICTSS2024), Dec. 2024
• OドープGeTe/Sb2Te3多層膜の特性評価とそのデバイスへの応用, 美内 睦美; 松田 和希; 澤井 英志; 吉本 匠汰; 尹 友, The 21st IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, Nov. 2024
• 人工シナプスの高性能化のためのNドープによるSb3Te相変化材料の熱安定性の向上, 吉本 匠汰; 矢矧 俊祐; 美内 睦美; 尹 友, The 21st IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, Nov. 2024
• 第一原理計算による空孔導入Sb2Te3/GeTe超格子材料の検討, 澤井 英志; 美内 睦美; 尹 友, The 21st IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, Nov. 2024
• PS-PDMSブロックコポリマーの自己組織化法によるナノ構造形成と評価, 廣田 優希; 桑原 憂也; 初谷 真隆; 尹 友, The 21st IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, Nov. 2024
• 高性能化を目指したHfOx薄膜評価とHfO2を用いたReRAMの開発, 宮田 大暉; 原川 来比登; 尹 友, The 21st IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, Nov. 2024
• 反応性スパッタリングによるZrOx薄膜作製とそのReRAMへの応用, 宮田 大暉; 原川 来比登; 尹 友, The 21st IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, Nov. 2024
• Doped Sb3Te for High-Performance Phase-Change Device, Y. Yin; S. Yoshimoto; S. Fukuda; S. Yahagi; M. Miuchi, The 36th Symposium on Phase Change Oriented Science (PCOS202４), Nov. 2024
• O-Doped GeTe/Sb2Te3 Multi-Layer Phase-Change Materials, M. Miuchi; K. Matsuda; E. Sawai; S. Yoshimoto; Y. Yin, 37th International Microprocesses and Nanotechnology Conference (MNC 2024), Nov. 2024
• N-Doped Sb3Te for High-Performance Phase-Change Device, S. Yoshimoto; S. Yahagi; M. Miuchi; Y. Yin, 37th International Microprocesses and Nanotechnology Conference (MNC 2024), Nov. 2024
• Nanodot Formation on Si and Polyimide Using 28000-6000 g/mol Molecular Weight PS-PDMS Blockcopolymer, Y. Hirota; Y. Kuwabara; Y. Yin, Nov. 2024
• Phase-Change Materials and their Applications, Y. Yin; M. Miuchi; S. Yahagi; E. Sawai; S. Yoshimoto; X. Dong; S. Fukuda; K. Matsuda, 2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2024), Oct. 2024
• Effect of RESET operation of CiM with PCM on recognition accuracy, K. Yano; Y. Yin; K. Namba, IEEE International Conference on Consumer Electronics - Taiwan, Jul. 2024
• High-Performance Chalcogenide-based Phase-Change Memory Technology, Y. Yin, 2024 IEEE the 13th International Conference on Communications, Circuits, and Systems (ICCCAS), May 2024
• 人工シナプス素子の高性能化に向けたNドープSb3Te相変化材料の開発, 吉本 匠汰; 尹 友, 2024年第71回応用物理学会春季学術講演会, Mar. 2024
• N-O Doped Sb2Te3 Phase-Change Materials for High Performance Artificial Synaptic Device, Y. Yin; K. Niiyama, IAEAC 2024, Mar. 2024
• Nanostructure Formation on Si and Polyimide by Using 47100-9000 g/mol Molecular Weight PS-PDMS Blockcopolymer, Y. Yin; Y. Kuwabara; Y. Hirota, ICTSS2023, Dec. 2023
• Nanodot Formation on Si and Polyimide by Using PS-PDMS Blockcopolymer, Y. Kuwabara; Y. Hirota; S. Ishii; T. Akahane; Y. Yin, MNC 2023, Nov. 2023
• O-Doped GeTe Chalcogenide for High-Performance Phase-Change Device, S. Yahagi; M. Miuchi; S. Yoshimoto; T. Miyata; T. Fujiwara; Y. Yin, MNC 2023, Nov. 2023
• Cross Metal-Insulator-Metal Diode with Hydrogen Silsesquioxane Nanolayer, S. Ishii; T. Akahane; Y. Kuwabara; G. Lin; Y. Yin, MNC 2023, Nov. 2023
• First-Principles Study of O-Doped GeTe/Sb2Te3 Superlattice, M. Miuchi; R. Shirakawa; E. Sawai; S. Yahagi; Y. Yin, MNC 2023, Nov. 2023
• Doped Chalcogenides for High-Performance Phase Change Devices, Y. Yin; M. Miuchi; S. Yahagi; T. Fujiwara, ASICON 2023, Oct. 2023
• PS-PDMSブロックコポリマーを用いたナノ構造の形成と評価, 桑原 憂也; 廣田 優希; 尹 友, The 20th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, Oct. 2023
• 光レクテナのためのMIMダイオードの作製と評価, 石井 翔; 赤羽 隆志; 尹 友, The 20th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, Oct. 2023
• 高信頼性に向けた酸素添加GeTe相変化薄膜の作製と評価, 矢矧 俊祐; 吉本 匠汰; 宮田 大暉; 美内 睦美; 尹 友, The 20th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, Oct. 2023
• 第一原理計算による酸素添加GeTe/Sb2Te3超格子人工シナプス機能材料の研究, 美内 睦美; 白川 遼馬; 澤井 英志; 矢矧 俊祐; 尹 友, The 20th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, Oct. 2023

Industrial Property Rights

• Patent right, 特願PCT/JP2015/072930, 13 Aug. 2015
• Patent right, 特願2008-115775, 25 Apr. 2008, 特開2009-266316
• Patent right, 特願2010-111424, 13 May 2010, 特開2011-237390
• Patent right, 特願2007-294887, 13 Nov. 2007, 特開2009-123847
• Patent right, 特願2007-137813, 24 May 2007, 特開2008-294207, 特許第5201616号
• Patent right, 特願2014-165037, 13 Aug. 2014
• Patent right, 特願2011-184581, 26 Aug. 2011

Awards

• BEST STUDENT PRESENTATION AWARD, N-Doped GeTe for Highly Reliable Phase-Change Device, 11th International Science, Social Sciences, Engineering and Energy Conference (I-SEEC 2022) and 6th International Conference on Technology and Social Science 2022 (ICTSS 2022), Dec. 2022
• BEST PRESENTATION AWARD, Undoped and Doped Zn5Sb3Te Chalcogenides for Use in Phase-Change Device with High Thermal Stability, 11th International Science, Social Sciences, Engineering and Energy Conference (I-SEEC 2022) and 6th International Conference on Technology and Social Science 2022 (ICTSS 2022), Dec. 2022
• BEST STUDENT PAPER AWARD, Finite Element Analysis of Phase-Change Device with Incorporated Nanostructures for Lowering Writing Current, International Conference on Technology and Social Science 2021 (ICTSS2021), Dec. 2021
• BEST PRESENTATION AWARD, Doped Sb2Te3 Phase-Change Materials for High Performance Artificial Synaptic Device, International Conference on Technology and Social Science 2021 (ICTSS2021), Dec. 2021
• BEST STUDENT PAPER AWARD, K. Yanagisawa;T. Akahane;Y. Yin, Electromagnetic Analysis of Antenna Used for Optical Rectenna, ICTSS2020, Dec. 2020
• BEST PRESENTATION AWARD, You Yin, Nanofabrication for Quantum Dot Solar Cell with High Conversion Efficiency, ICTSS2020, Dec. 2020
• BEST PAPER AWARD, You Yin, Proposal of a Novel Operation Method to Precisely Control Synaptic Strength for Phase-Change Artificial Synapse, ICTSS2020, Dec. 2020
• Oct. 2012
• 2012 YOKOYAMA AWARD IN SCIENCE AND TECHNOLOGY, 2012
• Sep. 2011
• ICTSS2023 BEST PAPER AWARD, Y. Yin;Y. Kuwabara;Y. Hirota, Nanostructure Formation on Si and Polyimide by Using 47100-9000 g/mol Molecular Weight PS-PDMS Blockcopolymer, 2023
• ICTSS2023 BEST STUDENT PAPER AWARD, M. Miuchi;E. Sawai;S Yahagi;Y. Yin, Doping O into Conventional GeTe/Sb2Te3 Superlattice for Functional Material of Artificial Synapse, 2023
• BEST STUDENT PAPER AWARD, ZrOx and HfOx Thin films and Their Application to ReRAM Devices, 2024
• ICTSS2024 BEST STUDENT PRESENTATION AWARD, Vacancy-introduced GeTe/Sb2Te3 superlattice material, 2024

Research Projects

• Apr. 2021, Mar. 2024, Principal investigator
• Apr. 2019
• Apr. 2020
• Apr. 2009, Mar. 2012, Competitive research funding
• Apr. 2011, Mar. 2012, Competitive research funding
• Apr. 2010, Mar. 2011, Competitive research funding
• 2005, 2008, Competitive research funding
• Nov. 2017, Mar. 2018, Principal investigator, Competitive research funding
• Research on nano wire phase-change memory, YIN You, Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (B), Grant-in-Aid for Young Scientists (B), Gunma University, 2009, 2011, In this work, we fabricated the nanowire phase-change memories with two methods :(1)EBL using the positive resist ZEP-520A followed by phase-change material deposition and lift-off processes,(2)EBL using the negative resist hydrogen silsesquioxane(HSQ)followed by reactive ion etching(RIE)after phase-change material deposition. We also demonstrated the fabrication and phase change memory performance of a conical TiN/Ge2Sb2Te5(GST)/TiN nanoarray(aerial array density : 207 Gbit inch2)prepared via block copolymer lithography and straightforward two-step etching. This work provides a significant step for low power consumption and ultra-high density storage based on phase change materials, 21710135

  対象リソースIRI
• Ultrafast Superlattice Phase-change Artificial Synapse, Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (B), Gunma University, 01 Apr. 2021, 31 Mar. 2024, 21H01382

  対象リソースIRI
• Write latency reduction on PCM for approximate computing, Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (C), Chiba University, 01 Apr. 2020, 31 Mar. 2023, 20K11728

  対象リソースIRI

Social Contribution

Social Contribution

• 　(Target:　General)

Academic Contribution

• TJCAS2019国際会議技術委員, 2019
• ICAEE2019国際会議幹事, 2019
• MNC2021国際会議プログラム委員, 2021
• ICNST2021国際会議技術委員, 2021
• MMIE2021国際会議技術委員, 2021
• MNC2020国際会議プログラム委員, 2020
• IEEE ICSICT2020国際会議技術委員, 2020