研究者基本情報

研究者

• 氏名

  尹　友, イン　ユウ

所属

• 電子情報部門, 教授

基本情報

• 研究者氏名（日本語）

  尹, 友

• 研究者氏名（カナ）

  イン, ユウ

論文上での記載著者名

• You Yin,尹 友
• You Yin
• 尹 友

ホームページ

• ホームページ1

  http://yinlab.ei.st.gunma-u.ac.jp/index.html

• ホームページ2

  http://yinlab.ei.st.gunma-u.ac.jp/Jin.html, 尹研究室

所属

• 群馬大学, 大学院理工学府, 准教授
• 群馬大学, 大学院理工学府, 教授

所属部局等

• 所属情報

  大学院理工学府, 電子情報部門

• 職名情報

  准教授

学歴

• 2003年05月, 上海交通大学, 博士, 修了, 海外 

学位

• 博士（工学）
• 博士（工学）
• 博士（工学）
• 博士（工学）, 上海交通大学

所属学協会

• IEEE (上級会員）
• 応用物理学会 （正会員）
• MRS（米）（正会員）

経歴

• 2021年10月01日, 9999年, 群馬大学, 電子情報部門, 教授, 教授相当
• 2008年11月, 2013年03月, 群馬大学, 大学院工学研究科 生産システム工学専攻 電子系, 助教, 助教相当
• 2018年11月, 2021年09月, 群馬大学, 大学院理工学府 電子情報部門, 准教授, 准教授・常勤専任講師相当
• 2013年04月, 2018年10月, 群馬大学, 大学院理工学府 電子情報部門, 助教, 助教相当
• 2006年04月, 2008年10月, 群馬大学, 工学部, 研究員, 研究員・ポスドク相当
• 2003年07月, 2006年03月, 群馬大学, 工学部 サテライト・ベンチャー・ビジネス・ラボラトリー, 講師（中核的研究機関研究員）, 研究員・ポスドク相当
• 2021年10月, 9999年, 群馬大学 大学院理工学府 電子情報部門, 教授, 教授相当

研究活動情報

研究分野

• ナノテク・材料, ナノ材料科学
• ナノテク・材料, 応用物性
• ナノテク・材料, 結晶工学
• ものづくり技術（機械・電気電子・化学工学）, 電気電子材料工学
• ものづくり技術（機械・電気電子・化学工学）, 電子デバイス、電子機器

研究キーワード

• 人工知能電子デバイス
• ＡＩ×ＩｏＴ関係材料・デバイス・システム
• 人工ニューラルネットワーク
• 脳型情報処理
• ナノ加工
• 薄膜
• 情報記録
• 太陽光発電素子
• フレキシブルセンサー

研究テーマ

• 先端ナノデバイス，先端材料，不揮発メモリ，多値記録、太陽電池，ナノ構造，ナノ加工, マイクロ・ ナノデバイス, 先端技術開発研究

論文

• Electromagnetic Analysis of Antenna Used for Optical Rectenna, K. Yanagisawa, T. Akahane, and Y. Yin, 2021年, Journal of Mechanical and Electrical Intelligent System
• Proposal of a Novel Operation Method to Precisely Control Synaptic Strength for Phase-Change Artificial Synapse, Y. Yin, 2021年, Journal of Mechanical and Electrical Intelligent System
• Nanofabrication for Quantum dot solar Cell with High Conversion Efficiency, Y. Yin, 2021年, Journal of Mechanical and Electrical Intelligent System, 4, 36, 41
• Winner-Takes-All mechanism realized by memristive neural network, J. J. Wang; Q. Yu; S. G. Hu; Yanchen Liu; Rui Guo; T. P. Chen; Y. Yin; Y. Liu, 2019年12月09日, Applied Physics Letters, 115, 24, 研究論文（学術雑誌）

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• Extremely Small Proximity Effect in 30 keV Electron Beam Drawing with Thin Calixarene Resist for 20×20 nm2 Pitch Dot Arrays, Sumio Hosaka; Zulfakri Mohamad; Masumi Shira; Hirotaka Sano; You Yin; Akihira Miyachi; Hayato Sone, 2008年02月, Appl. Phys. Expr., APPLIED PHYSICS EXPRESS, 1, 2, 027003 1-3, 研究論文（学術雑誌）

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• Ultramultiple-level storage in TiN/SbTeN double-layer cell for high-density nonvolatile memory, You Yin; Naoya Higano; Hayato Sone; Sumio Hosaka, 2008年04月, APPLIED PHYSICS LETTERS, 92, 16, 163509 1-3, 研究論文（学術雑誌）

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• Multilevel storage in lateral top-heater phase-change memory, You Yin; Kazuhiro Ota; Naoya Higano; Hayato Sone; Sumio Hosaka, 2008年08月, IEEE ELECTRON DEVICE LETTERS, 29, 8, 876, 878, 研究論文（学術雑誌）

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• Nano-dot and -pit arrays with a pitch of 25 nm x 25 nm fabricated by EB drawing, RIE and nano-imprinting for 1 Tb/in(2) storage, Sumio Hosaka; Zulfakri Mohamad; Masumi Shirai; Hirotaka Sano; You Yin; Akihira Miyachi; Hayato Sone, 2008年05月, MICROELECTRONIC ENGINEERING, 85, 5-6, 774, 777, 研究論文（学術雑誌）

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• Associative memory realized by a reconfigurable memristive Hopfield neural network, S. G. Hu; Y. Liu; Z. Liu; T. P. Chen; J. J. Wang; Q. Yu; L. J. Deng; Y. Yin; Sumio Hosaka, 2015年06月, NATURE COMMUNICATIONS, 6, 7522, 研究論文（学術雑誌）

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• Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current, You Yin; Tao Wang, 2015年07月, IEEE TRANSACTIONS ON ELECTRON DEVICES, 62, 7, 2184, 2189, 研究論文（学術雑誌）

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• The effect of h-BN buffer layers in bilayer graphene on Co (111), Can Li; Yan Liu; Bin Zhang; Tao Wang; Qing Guo; Kuang Sheng; You Yin, 2015年05月, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 66, 10, 1631, 1636, 研究論文（学術雑誌）

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• Oxygen-doped Sb2Te3 for high-performance phase-change memory, You Yin; Shota Morioka; Shun Kozaki; Ryoya Satoh; Sumio Hosaka, 2015年09月, APPLIED SURFACE SCIENCE, 349, 230, 234, 研究論文（学術雑誌）

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• Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-Change Nanostructures with an Extremely Low Switching Current, Woon Ik Park; Jong Min Kim; Jae Won Jeong; Yoon Hyoung Hur; Young Joong Choi; Se-Hun Kwon; Seungbum Hong; You Yin; Yeon Sik Jung; Kwang Ho Kim, 2015年04月, CHEMISTRY OF MATERIALS, 27, 7, 2673, 2677, 研究論文（学術雑誌）

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• Bandgap engineering of monolayer MoS2 under strain: A DFT study, Can Li; Bowen Fan; Weiyi Li; Luowei Wen; Yan Liu; Tao Wang; Kuang Sheng; You Yin, 2015年06月, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 66, 11, 1789, 1793, 研究論文（学術雑誌）

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• Tunable bandgap of monolayer black phosphorus by using vertical electric field: A DFT study, Tao Wang; Yan Liu; Qing Guo; Bin Zhang; Kuang Sheng; Can Li; You Yin, 2015年03月, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 66, 6, 1031, 1034, 研究論文（学術雑誌）

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• Flexible One Diode-One Phase Change Memory Array Enabled by Block Copolymer Self-Assembly, Beom Ho Mun; Byoung Kuk You; Se Ryeun Yang; Hyeon Gyun Yoo; Jong Min Kim; Woon Ik Park; You Yin; Myunghwan Byun; Yeon Sik Jung; Keon Jae Lee, 2015年04月, ACS NANO, 9, 4, 4120, 4128, 研究論文（学術雑誌）

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• Material engineering in phase-change memory for low power consumption and multi-level storage, You Yin; Tomoyuki Noguchi; Hiroki Ohno; Sumio Hosaka, 2009年, 2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009), 449, 452, 研究論文（国際会議プロシーディングス）

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• Multilevel Storage in N-Doped Sb2Te3-Based Lateral Phase Change Memory with an Additional Top TiN Layer, You Yin; Kazuhiro Ota; Tomoyuki Noguchi; Hiroki Ohno; Hayato Sone; Sumio Hosaka, 2009年04月, JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 4, 04C063 1-5, 研究論文（学術雑誌）

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• Nano magnetic column arrays fabrication for patterned media in magnetic recording using EB lithography and ion milling, Sumio Hosaka; Yasunari Tanaka; Masumi Shirai; Zulfakri Mohamad; You Yin; Yuji Kondo; Jun Ariake, 2009年, 2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009), 140, +, 研究論文（国際会議プロシーディングス）

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• Programming margin enlargement by material engineering for multilevel storage in phase-change memory, You Yin; Tomoyuki Noguchi; Hiroki Ohno; Sumio Hosaka, 2009年09月, APPLIED PHYSICS LETTERS, 95, 13, 133503 1-3, 研究論文（学術雑誌）

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• Simulation of Fine Resist Profile Formation by Electron Beam Drawing and Development with Solubility Rate Based on Energy Deposition Distribution, Hui Zhang; Takuya Komori; Yulong Zhang; You Yin; Sumio Hosaka, 2013年12月, JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 12, 126504, 研究論文（学術雑誌）

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• A Novel Phase-Change Memory with a Separate Heater Characterized by Constant Resistance for Multilevel Storage, Rosalena Irma Alip; Ryota Kobayashi; Yu Long Zhang; Zulfakri Mohamad; You Yin; Sumio Hosaka, 2013年, ADVANCED MICRO-DEVICE ENGINEERING III, 534, 136, 140, 研究論文（国際会議プロシーディングス）

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• Improved Observation Contrast of Block-Copolymer Nanodot Pattern Using Carbon Hard Mask (CHM), Takashi Akahane; Takuya Komori; Jing Liu; Miftakhul Huda; Zulfakri Bin Mohamad; You Yin; Sumio Hosaka, 2013年, ADVANCED MICRO-DEVICE ENGINEERING III, 534, 126, +, 研究論文（国際会議プロシーディングス）

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• Effect of salty development on forming HSQ resist nanodot arrays with a pitch of 15×15 nm2 by 30-keV electron beam lithography, T. Komori; H. Zhang; T. Akahane; Z. Mohamad; Y. Yin; S. Hosaka, 2013年, Key Engineering Materials, ADVANCED MICRO-DEVICE ENGINEERING III, 534, 113, +, 研究論文（国際会議プロシーディングス）

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• Volume-change-free GeTeN films for high-performance phase-change memory, You Yin; Hui Zhang; Sumio Hosaka; Yang Liu; Qi Yu, 2013年12月, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 46, 50, 505311, 研究論文（学術雑誌）

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• Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media, Zulfakri Mohamad; Rosalena Irma Alip; Takuya Komori; Takashi Akahane; Hui Zhang; Miftakhul Huda; You Yin; Sumio Hosaka, 2013年, ADVANCED MICRO-DEVICE ENGINEERING III, 534, 118, +, 研究論文（国際会議プロシーディングス）

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• Multi-Level Storage in Lateral Phase-Change Memory: from 3 to 16 Resistance Levels, You Yin; Rosalena Irma Alip; Yulong Zhang; Ryota Kobayashi; Sumio Hosaka, 2013年, ADVANCED MICRO-DEVICE ENGINEERING III, 534, 131, +, 研究論文（国際会議プロシーディングス）

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• Design of an electronic synapse with spike time dependent plasticity based on resistive memory device, S. G. Hu; H. T. Wu; Y. Liu; T. P. Chen; Z. Liu; Q. Yu; Y. Yin; Sumio Hosaka, 2013年03月, JOURNAL OF APPLIED PHYSICS, 113, 11, 114502, 研究論文（学術雑誌）

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• Piezoresistive Acceleration Sensor with High Sensitivity and High Responsiveness, Shintaro Kurokami; Zulfakri Mohamad; You Yin; Sumio Hosaka; Takahiro Fuju; Yoshiharu Sueyoshi; Haruki Okano, 2013年, ADVANCED MICRO-DEVICE ENGINEERING III, 534, 169, +, 研究論文（国際会議プロシーディングス）

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• Possibility of Forming 18-nm-Pitch Ultrahigh Density Fine Dot Arrays for 2 Tbit/in.(2) Patterned Media Using 30-keV Electron Beam Lithography, Sumio Hosaka; Yasunari Tanaka; Masumi Shirai; Zulfakri Mohamad; You Yin, 2010年, JAPANESE JOURNAL OF APPLIED PHYSICS, 49, 4, 046503 1-3, 研究論文（学術雑誌）

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• Observation of Si Pattern Sidewall Using Inclination Atomic Force Microscope for Evaluation of Line Edge Roughness, Sumio Hosaka; Hirokazu Koyabu; Masamichi Noro; Katsuyuki Takizawa; Hayato Sone; You Yin, 2010年07月, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 10, 7, 4522, 4527, 研究論文（学術雑誌）

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• Memory effect in metal-chalcogenide-metal structures for ultrahigh-density nonvolatile memories, Y Yin; H Sone; S Hosaka, 2006年06月, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45, 6A, 4951, 4954, 研究論文（学術雑誌）

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• Electrical properties of phase change and channel current control in ultrathin phase-change channel transistor memory by annealing, Y Yin; A Miyachi; D Niida; H Sone; S Hosaka, 2006年04月, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45, 4B, 3238, 3242, 研究論文（学術雑誌）

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• Simulation of proposed confined-chalcogenide phase-change random access memory for low reset current by finite element modelling, You Yin; Hayato Sone; Sumio Hosaka, 2006年08月, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45, 8A, 6177, 6181, 研究論文（学術雑誌）

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• A novel lateral phase-change random access memory characterized by ultra low RESET current and power consumption, You Yin; Akihira Miyachi; Daisuke Niida; Hayato Sone; Sumio Hosaka, 2006年07月, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 45, 24-28, L726, L729, 研究論文（学術雑誌）

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• Finite element analysis of dependence of programming characteristics of phase-change memory on material properties of chalcogenides, You Yin; Hayato Sone; Surnio Hosaka, 2006年11月, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45, 11, 8600, 8603, 研究論文（学術雑誌）

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• In situ SEM observation of grain formation and growth induced by electrical pulses in lateral Ge(2)Sb(2)Tes phase-change memory, You Yin; Daisuke Niida; Kazuhiro Ohta; Akihira Miyachi; Masahiro Asai; Naoya Higano; Hayato Sone; Sumio Hosaka, 2007年, MATERIALS AND PROCESSES FOR NONVOLATILE MEMORIES II, 997, 331, +, 研究論文（国際会議プロシーディングス）
• Nano-dot arrays with a bit pitch and a track pitch of 25 nm formed by EB writing for 1 Tb/in(2) storage, Sumio Hosaka; Hirotaka Sano; Masumi Shirai; You Yin; Hayato Sone, 2007年05月, MICROELECTRONIC ENGINEERING, 84, 5-8, 802, 805, 研究論文（学術雑誌）

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• Characteristics of N-doped Sb2Te3 films by X-ray diffraction and resistance measurement for phase-change memory, You Yin; Naoya Higano; Kazuhiro Ohta; Akihira Miyachi; Masahiro Asai; Daisuke Niida; Hayato Sone; Sumio Hosaka, 2007年, MATERIALS AND PROCESSES FOR NONVOLATILE MEMORIES II, 997, 287, +, 研究論文（国際会議プロシーディングス）
• Prototypical lateral multi-state phase-change memory with a multi-layer medium, Y. Yin; N. Higano; K. Ota; H. Sone; S. Hosaka, 2007年, EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS, 149, 152, 研究論文（国際会議プロシーディングス）

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• Prototype of phase-change channel transistor for both nonvolatile memory and current control, Sumio Hosaka; Kunihiro Miyauchi; Takuro Tamura; You Yin; Hayato Sone, 2007年03月, IEEE TRANSACTIONS ON ELECTRON DEVICES, 54, 3, 517, 523, 研究論文（学術雑誌）

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• Lateral SbTeN based multi-layer phase change memory for multi-state storage, You Yin; Hayato Sone; Sumio Hosaka, 2007年12月, MICROELECTRONIC ENGINEERING, 84, 12, 2901, 2906, 研究論文（学術雑誌）

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• Scanning electron microscope for in situ study of crystallization of Ge(2)Sb(2)Te(5) in phase-change memory, You Yin; Daisuke Niida; Kazuhiro Ota; Hayato Sone; Sumio Hosaka, 2007年12月, REVIEW OF SCIENTIFIC INSTRUMENTS, 78, 12, 126101 1-3, 研究論文（学術雑誌）

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• Characterization of nitrogen-doped Sb2Te3 films and their application to phase-change memory, You Yin; Hayato Sone; Sumio Hosaka, 2007年09月, JOURNAL OF APPLIED PHYSICS, 102, 6, 研究論文（学術雑誌）

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• A chalcogenide-based device with potential for multi-state storage, You Yin; Hayato Sone; Sumio Hosaka, 2007年06月, MICROELECTRONICS JOURNAL, 38, 6-7, 695, 699, 研究論文（学術雑誌）

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• Thickness dependences of phase change and channel current control in phase-change channel transistor, Y. Yin; A. Miyachi; D. Niida; H. Sone; S. Hosaka, 2005年, 2005 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, PROCEEDINGS, 617, 620, 研究論文（国際会議プロシーディングス）

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• Dependences of electrical properties of thin GeSbTe and AgInSbTe films on annealing, Y Yin; H Sone; S Hosaka, 2005年08月, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44, 8, 6208, 6212, 研究論文（学術雑誌）

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• Low-Reset-Current Ring-Confined-Chalcogenide Phase Change Memory, You Yin; Sumio Hosaka, 2012年10月, JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 10, 104202 1-5, 研究論文（学術雑誌）

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• Controlled promotion of crystallization for application to multilevel phase-change memory, You Yin; Sumio Hosaka, 2012年06月, APPLIED PHYSICS LETTERS, 100, 25, 253503 1-4, 研究論文（学術雑誌）

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• Formation of 12-nm Nanodot Pattern by Block Copolymer Self-Assembly Technique, Miftakhul Huda; Takuro Tamura; You Yin; Sumio Hosaka, 2012年, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING II, 497, 122, 126, 研究論文（国際会議プロシーディングス）

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• Controllable Crystallization in Phase-Change Memory for Low-Power Multilevel Storage, You Yin; Sumio Hosaka, 2012年06月, JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 6, 064101 1-4, 研究論文（学術雑誌）

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• Material Engineering for Low Power Consumption and Multi-Level Storage in Lateral Phase-Change Memory, You Yin; Rosalena Irma Alip; Yulong Zhang; Sumio Hosaka, 2012年, MECHATRONICS AND INTELLIGENT MATERIALS II, PTS 1-6, 490-495, 3286, 3290, 研究論文（国際会議プロシーディングス）

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• Estimation of Nanometer-sized EB patterning using Energy deposition distribution in Monte Carlo Simulation, Hui Zhang; Takuro Tamura; You Yin; Sumio Hosaka, 2012年, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING II, 497, 127, +, 研究論文（国際会議プロシーディングス）

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• Coercive force enhanced by nanometer-sizing of magnetic column and measured by X-ray magnetic circular dichroism (XMCD), Sumio Hosaka; Zulfakri Mohamad; Takashi Akahane; You Yin; Hiroshi Sakurai; Yuji Kondo; Jun Ariake; Naoki Honda; Motohiro Suzuki, 2012年, MECHATRONICS AND INTELLIGENT MATERIALS II, PTS 1-6, 490-495, 292, +, 研究論文（国際会議プロシーディングス）

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• Pico-Newton controlled step-in mode NC-AFM using a quadrature frequency demodulator and a slim probe in air for CD-AFM, Sumio Hosaka; Takayuki Takizawa; Daisuke Terauchi; You Yin; Hayato Sone, 2012年, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING II, 497, 95, 100, 研究論文（国際会議プロシーディングス）

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• Influence of Phase-Change Materials and Additional Layer on Performance of Lateral Phase-Change Memories, You Yin; Sumio Hosaka, 2012年, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING II, 497, 106, 110, 研究論文（国際会議プロシーディングス）

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• Fabrication of 5-nm-Sized Nanodots Using Self-Assembly of Polystyrene-Poly(dimethylsiloxane), Miftakhul Huda; Jing Liu; You Yin; Sumio Hosaka, 2012年06月, JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 6, 研究論文（学術雑誌）

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• EB lithography of 15×15 nm2 pitched nanodot arrays with a dot size of <10nm using high development contrast salty developer, T. Komori; H. Zhang; T. Akahane; Z. Mohamad; Y. Yin; S. Hosaka, 2012年06月, Jpn. J. Appl. Phys., JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 6, 研究論文（学術雑誌）

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• Guide Pattern Functionalization for Regularly Arranged PS-PDMS Self-Assembled Nanodot Pattern by Brush Treatment, Takashi Akahane; Miftakhul Huda; Takuro Tamura; You Yin; Sumio Hosaka, 2012年, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING II, 497, 116, 121, 研究論文（国際会議プロシーディングス）

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• Random-Access Multilevel Storage in Phase-Change Memory by Staircase-Like Pulse Programming, Ryota Kobayashi; Tomoyuki Noguchi; You Yin; Sumio Hosaka, 2012年, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING II, 497, 111, 115, 研究論文（国際会議プロシーディングス）

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• Crystal Growth Suppression by N-Doping into Chalcogenide for Application to Next-Generation Phase-Change Memory, You Yin; Sumio Hosaka, 2012年, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING II, 497, 101, 105, 研究論文（国際会議プロシーディングス）

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• Fabrication of high-density In3Sb1Te2 phase change nanoarray on glass-fabric reinforced flexible substrate, Jong Moon Yoon; Dong Ok Shin; You Yin; Hyeon Kook Seo; Daewoon Kim; Yong In Kim; Jung Ho Jin; Yong Tae Kim; Byeong-Soo Bae; Sang Ouk Kim; Jeong Yong Lee, 2012年06月, NANOTECHNOLOGY, 23, 25, 255301 1-9, 研究論文（学術雑誌）

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• Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory, Jong Moon Yoon; Hu Young Jeong; Sung Hoon Hong; You Yin; Hyoung Seok Moon; Seong-Jun Jeong; Jun Hee Han; Yong In Kim; Yong Tae Kim; Heon Lee; Sang Ouk Kim; Jeong Yong Lee, 2012年, JOURNAL OF MATERIALS CHEMISTRY, 22, 4, 1347, 1351, 研究論文（学術雑誌）

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• Realization of transient memory-loss with NiO-based resistive switching device, S. G. Hu; Y. Liu; T. P. Chen; Z. Liu; Q. Yu; L. J. Deng; Y. Yin; Sumio Hosaka, 2012年11月, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 109, 2, 349, 352, 研究論文（学術雑誌）

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• Estimation of pattern resolution using NaCl high-contrast developer by Monte Carlo simulation of electron beam lithography, Hui Zhang; Miftakhul Huda; Takuya Komori; Yulong Zhang; You Yin; Sumio Hosaka, 2014年06月, MICROELECTRONIC ENGINEERING, 121, 142, 146, 研究論文（学術雑誌）

  DOI
• Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation, Hui Zhang; YuLong Zhang; Sumio Hosaka; You Yin, 2013年05月, American Journal of Nanoscience and Nanotechnology, American Journal of Nanoscience and Nanotechnology, 1, 11, 16, 研究論文（学術雑誌）

  DOI
• Coercive Force Reduced by Nanometer-sized Dot Pitch in CoPt Magnetic Dot Arrays for Patterned Media Measured by Micro X-Ray Magnetic Circular Dichroism, Zulfakri Bin Mohamad; Takashi Akahane; Takuya Komori; Hui Zhang; Rosalena Irma Alip; Motohiro Suzuki; M. Takagi; Naomi Kawamura; You Yin; Sumio Hosaka, 2012年, Jurnal Teknologi, Jurnal Teknologi, 59, SUPPL.3, 37, 39, 研究論文（学術雑誌）
• Scanning tunneling microscopy and in situ spectroscopy of ultra thin Ti films and nano sized TiOx dots induced by STM, Y Yin; JF Jiang; QY Cai; BC Cai, 2002年10月, APPLIED SURFACE SCIENCE, 199, 1-4, 319, 327, 研究論文（学術雑誌）

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• Coulomb blockade in an ultrathin Ti nanowire at room temperature, Y Yin; JF Jiang; QY Cai; T Yang; BC Cai, 2003年07月, CHINESE JOURNAL OF ELECTRONICS, 12, 3, 451, 453, 研究論文（学術雑誌）
• The dependence of crystallization on temperature in the nanosecond timescale for GeTe-based fast phase-change resistor, Hui Zhang; Yulong Zhang; You Yin; Sumio Hosaka, 2016年04月, CHEMICAL PHYSICS LETTERS, 650, 102, 106, 研究論文（学術雑誌）

  DOI
• Sub 10 ns fast switching and resistance control in lateral GeTe-based phase-change memory, You Yin; Yulong Zhang; Yousuke Takehana; Ryota Kobayashi; Hui Zhang; Sumio Hosaka, 2016年06月, JAPANESE JOURNAL OF APPLIED PHYSICS, 55, 6, 06GG07, 研究論文（学術雑誌）

  DOI
• Ultra-multiple and reproducible resistance levels based on intrinsic crystallization properties of Ge1Sb4Te7 film, You Yin; Shota Iwashita; Sumio Hosaka; Tao Wang; Jingze Li; Yang Liu; Qi Yu, 2016年04月, APPLIED SURFACE SCIENCE, 369, 348, 353, 研究論文（学術雑誌）

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• Formation of 13-nm-Pitch Block Copolymer Self-Assembled Nanodots Pattern for High-Density Magnetic Recording, Miftakhul Huda; You Yin; Sumio Hosaka, 2011年, 4TH NANOSCIENCE AND NANOTECHNOLOGY SYMPOSIUM (NNS2011): AN INTERNATIONAL SYMPOSIUM, 1415, 79, 82, 研究論文（国際会議プロシーディングス）

  DOI
• Long-range-ordering of self-assembled block copolymer nanodots using EB-drawn guide line and post mixing template, Sumio Hosaka; Takashi Akahane; Miftakhul Huda; Takuro Tamura; You Yin; Naoko Kihara; Yoshiyuki Kamata; Akira Kitsutsu, 2011年08月, MICROELECTRONIC ENGINEERING, 88, 8, 2571, 2575, 研究論文（学術雑誌）

  DOI
• Self-Assembled Nanodot Fabrication by Using Diblock Copolymer, Miftakhul Huda; You Yin; Sumio Hosaka, 2011年, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING I, 459, 120, +, 研究論文（国際会議プロシーディングス）

  DOI
• Fabrication of 10-nm-Order Block Copolymer Self-Assembled Nanodots for High-Density Magnetic Recording, Miftakhul Huda; Takashi Akahane; Takuro Tamura; You Yin; Sumio Hosaka, 2011年06月, JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 6, 06GG04 1-4, 研究論文（学術雑誌）

  DOI
• Fabrication of Nanometer Sized Si Dot Arrays Using Ar Ion Milling with Calixarene Resist Dot Arrays, Takuro Tamura; Yasunari Tanaka; Takashi Akahane; You Yin; Sumio Hosaka, 2011年, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING I, 459, 116, +, 研究論文（国際会議プロシーディングス）

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• Large Resistance Ratio for High Reliability of Multi-Level Storage in Phase-Change Memory, You Yin; Tomoyuki Noguchi; Hiroki Ohno; Sumio Hosaka, 2011年, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING I, 459, 140, 144, 研究論文（国際会議プロシーディングス）

  DOI
• Guide Pattern for Long-Range-Order Nanofabrication of Self-Assembled Block Copolymers, Takashi Akahane; Miftakhul Huda; You Yin; Sumio Hosaka, 2011年, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING I, 459, 124, +, 研究論文（国際会議プロシーディングス）

  DOI
• Possibility of Freely Achievable Multilevel Storage of Phase-Change Memory by Staircase-Shaped Pulse Programming, You Yin; Tomoyuki Noguchi; Sumio Hosaka, 2011年10月, JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 10, 研究論文（学術雑誌）

  DOI
• Orientation-Controlled and Long-Range-Ordered Self-Assembled Nanodot Array for Ultrahigh-Density Bit-Patterned Media, Takashi Akahane; Miftakhul Huda; Takuro Tamura; You Yin; Sumio Hosaka, 2011年06月, JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 6, 06GG06 1-5, 研究論文（学術雑誌）

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• Multilevel storage in lateral phase-change memory by promotion of nanocrystallization, You Yin; Sumio Hosaka, 2011年08月, MICROELECTRONIC ENGINEERING, 88, 8, 2794, 2796, 研究論文（学術雑誌）

  DOI
• Nanometer resolution stress measurement of the Si gate using illumination-collection-type scanning near-field Raman spectroscopy with a completely metal-inside-coated pyramidal probe, Sumio Hosaka; Yusuke Aramomi; Hayato Sone; You Yin; Eiji Sato; Kenji Tochigi, 2011年01月, NANOTECHNOLOGY, 22, 2, 025206, 研究論文（学術雑誌）

  DOI
• Prototype of illumination-collection mode scanning near-field optical microscopy and Raman spectroscopy with gold inner-coated aperture-less pyramidal probe, Sumio Hosaka; Hirokazu Koyabu; Yusuke Aramomi; Hayato Sone; You Yin; Eiji Sato; Kenji Tochigi, 2011年, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING I, 459, 129, +, 研究論文（国際会議プロシーディングス）

  DOI
• Long-range-ordering of Nanodot Arrays Using Self-assembly and Post and Line Mixing Templates, Sumio Hosaka; Takashi Akahane; Miftakhul Huda; Takuya Komori; You Yin, 2011年, 4TH NANOSCIENCE AND NANOTECHNOLOGY SYMPOSIUM (NNS2011): AN INTERNATIONAL SYMPOSIUM, 1415, 102, 106, 研究論文（国際会議プロシーディングス）

  DOI
• Proposed Phase-Change Memory with a Step-Like Channel for High-Performance Multi-State Storage, You Yin; Sumio Hosaka, 2011年, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING I, 459, 145, 150, 研究論文（国際会議プロシーディングス）

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• Recrystallization process controlled by staircase pulse in phase change memory, You Yin; Ryota Kobayashi; Sumio Hosaka, 2014年01月, MICROELECTRONIC ENGINEERING, 113, 61, 65, 研究論文（学術雑誌）

  DOI
• Fabrication of 25-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Drawing, RIE and Ion-Milling, Zulfakri Mohamad; Miftakhul Huda; Takuya Komori; Rosalena Irma Alip; Hui Zhang; You Yin; Sumio Hosaka, 2014年, ADVANCED MICRO-DEVICE ENGINEERING IV, 596, 92, +, 研究論文（国際会議プロシーディングス）

  DOI
• Fabrication of CoPt Nanodot Array with a Pitch of 33 nm Using Pattern-Transfer Technique of PS-PDMS Self-Assembly, Miftakhul Huda; Zulfakri Bin Mohamad; Takuya Komori; You Yin; Sumio Hosaka, 2014年, ADVANCED MICRO-DEVICE ENGINEERING IV, 596, 83, +, 研究論文（国際会議プロシーディングス）

  DOI
• Attempts to form the 10-nm-order pitch of self-assembled nanodots using PS-PDMS block copolymer, Miftakhul Huda; Jing Liu; Zulfakri Bin Mohamad; You Yin; Sumio Hosaka, 2014年, INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 11, 5-8, 425, 433, 研究論文（学術雑誌）

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• Ordering of 6-nm-sized nanodot arrays with 10-nm-pitch using self-assembled block copolymers along electron beam-drawn guide-lines, Sumio Hosaka; Takashi Akahane; Miftakhul Huda; Takuya Komori; Hui Zhang; You Yin, 2014年07月, MICROELECTRONIC ENGINEERING, 123, 54, 57, 研究論文（学術雑誌）

  DOI
• Controlling of 6 nm Sized and 10 nm Pitched Dot Arrays Ordered along Narrow Guide Lines Using PS-PDMS Self-Assembly, Sumio Hosaka; Takashi Akahane; Miftakhul Huda; Hui Zhang; You Yin, 2014年05月, ACS APPLIED MATERIALS & INTERFACES, 6, 9, 6208, 6211, 研究論文（学術雑誌）

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• Controlled Crystallization Process of Phase-change Memory device by a Separate Heater Structure, Rosalena Irma Alip; Zulfakri Mohamad; You Yin; Sumio Hosaka, 2014年, ADVANCED MICRO-DEVICE ENGINEERING IV, 596, 107, 110, 研究論文（国際会議プロシーディングス）

  DOI
• Reconstruction of atomic force microscope image using estimated tip shape from impulse response technique, Yasuhiko Harada; Hayato Sone; You Yin; Sumio Hosaka, 2014年, ADVANCED MICRO-DEVICE ENGINEERING IV, 596, 147, 151, 研究論文（国際会議プロシーディングス）

  DOI
• Ordering of Self-Assembled Nanodots Improved by Guide Pattern with Low Line Edge Roughness for 5 Tbit/in.(2) Patterned Media, Takuya Komori; Miftakhul Huda; Takashi Akahane; Muneyasu Masuda; Jing Liu; Zulfakri Bin Mohamad; You Yin; Sumio Hosaka, 2014年, ADVANCED MICRO-DEVICE ENGINEERING IV, 596, 78, 82, 研究論文（国際会議プロシーディングス）

  DOI
• Estimation of HSQ Resist Profile by Using High Contrast Developement Model for High Resolution EB Lithography, Hui Zhang; Takuya Komori; Jing Liu; Yulong Zhang; Zulfakri Mohamad; You Yin; Sumio Hosaka, 2014年, ADVANCED MICRO-DEVICE ENGINEERING IV, 596, 97, 100, 研究論文（国際会議プロシーディングス）

  DOI
• Ordering of self-assembled 5-nm-diameter poly(dimethylsiloxane) nanodots with sub-10nm pitch using ultra-narrow electron-beam-drawn guide lines and three-dimensional control, Hui Zhang; Sumio Hosaka; You Yin, 2014年03月, APPLIED PHYSICS LETTERS, 104, 9, 93107, 研究論文（学術雑誌）

  DOI
• Effect of a separate heater structure for crystallisation to enable multilevel storage phase-change memory, Rosalena Irma Alip; Zulfakri Mohamad; You Yin; Sumio Hosaka, 2014年, INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 11, 5-8, 389, 395, 研究論文（学術雑誌）

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• Synaptic long-term potentiation realized in Pavlov's dog model based on a NiOx-based memristor, S. G. Hu; Y. Liu; Z. Liu; T. P. Chen; Q. Yu; L. J. Deng; Y. Yin; Sumio Hosaka, 2014年12月, JOURNAL OF APPLIED PHYSICS, 116, 21, 214502, 研究論文（学術雑誌）

  DOI
• Fabrication of 6-nm-sized nanodot arrays with 12 nm-pitch along guide lines using both self-assembling and electron beam-drawing for 5 Tbit/in(2) magnetic recording, Sumio Hosaka; Takashi Akahane; Miftakhul Huda; Takuya Komori; Hui Zhang; You Yin, 2014年, ADVANCED MICRO-DEVICE ENGINEERING IV, 596, 73, +, 研究論文（国際会議プロシーディングス）

  DOI
• Electron Beam Lithography for Fabrication of Nano Phase-change Memory, You Yin; Taichi Itagawa; Sumio Hosaka, 2014年, QUANTUM, NANO, MICRO TECHNOLOGIES AND APPLIED RESEARCHES, 481, 30, 35, 研究論文（国際会議プロシーディングス）

  DOI
• Fabrication of Carbon Nanodot Arrays with a Pitch of 20 nm for Pattern-Transfer of PDMS Self-Assembled Nanodots, Jing Liu; Miftakhul Huda; Zulfakri Bin Mohamad; Hui Zhang; You Yin; Sumio Hosaka, 2014年, ADVANCED MICRO-DEVICE ENGINEERING IV, 596, 88, 91, 研究論文（国際会議プロシーディングス）

  DOI
• Scanning Near Field Circular Polarization Optical Microscope for Measuring Magnetic Nanodot Arrays, Tao Jin; Lu Shen; Sumio Hosaka; You Yin; Takeshi Miura; Wenmei Hou, 2017年01月, SCIENCE OF ADVANCED MATERIALS, 9, 1, 151, 155, 研究論文（学術雑誌）

  DOI
• First-principles calculation of photocurrent in monolayer silicene sheet under small voltages, Tao Wang; Minyan Chen; Bowen Fan; Yan Liu; Kuang Sheng; You Yin; Yiqun Xie, 2017年07月15日, Optics Communications, 395, 289, 292, 研究論文（学術雑誌）

  DOI
• Ab initio Study of Tunable Band Gap of Monolayer and Bilayer Phosphorene by the Vertical Electronic Field, Wang Tao; Guo Wei; Wen Luowei; Liu Yan; Zhang Bin; Sheng Kuang; Yin You, 2017年02月, JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION, 32, 1, 213, 216, 研究論文（学術雑誌）

  DOI
• Predicting House Price with a Memristor-Based Artificial Neural Network, J. J. Wang; S. G. Hu; X. T. Zhan; Q. Luo; Q. Yu; Zhen Liu; T. P. Chen; Y. Yin; Sumio Hosaka; Y. Liu, 2018年03月08日, IEEE Access, 6, 16523, 16528, 研究論文（学術雑誌）

  DOI
• γ-Ray Radiation Effects on an HfO2-Based Resistive Memory Device, Shaogang Hu; Yang Liu; Tupei Chen; Qi Guo; Yu Dong Li; Xing Yao Zhang; L. J. Deng; Qi Yu; You Yin; Sumio Hosaka, 2018年01月, IEEE Transactions on Nanotechnology, 17, 1, 61, 64, 研究論文（学術雑誌）

  DOI
• The phosphorene under the external electronic field and strain, Tao Wang; Yan Liu; Wen Wen; Wei Guo; You Yin, 2017年12月01日, International Journal of Modern Physics C, 28, 12, 1750131, 研究論文（学術雑誌）

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• Current density enhancement nano-contact phase-change memory for low writing current, You Yin; Sumio Hosaka; Woon Ik Park; Yeon Sik Jung; Keon Jae Lee; Byoung Kuk You; Yang Liu; Qi Yu, 2013年07月15日, Applied Physics Letters, 103, 3, 33116, 研究論文（学術雑誌）

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• Emulating the Ebbinghaus forgetting curve of the human brain with a NiO-based memristor, S. G. Hu; Y. Liu; T. P. Chen; Z. Liu; Q. Yu; L. J. Deng; Y. Yin; Sumio Hosaka, 2013年09月23日, Applied Physics Letters, 103, 13, 133701, 研究論文（学術雑誌）

  DOI
• Self-assembled incorporation of modulated block copolymer nanostructures in phase-change memory for switching power reduction, Woon Ik Park; Byoung Kuk You; Beom Ho Mun; Hyeon Kook Seo; Jeong Yong Lee; Sumio Hosaka; You Yin; C. A. Ross; Keon Jae Lee; Yeon Sik Jung, 2013年03月26日, ACS Nano, 7, 3, 2651, 2658, 研究論文（学術雑誌）

  DOI
• Step-in mode NC-AFM using a quadrature frequency demodulator for observing high-aspect ratio structures in air, Sumio Hosaka; Daisuke Terauchi; Takayuki Takizawa; You Yin; Hayato Sone, 2011年03月30日, e-Journal of Surface Science and Nanotechnology, 9, 122, 125, 研究論文（学術雑誌）

  DOI
• Phase-change materials and memory devices for IoT application, You Yin, 2017年07月01日, Proceedings of International Conference on ASIC, 2017-October, ASICON, 422, 425, 研究論文（国際会議プロシーディングス）

  DOI
• Reactively sputtered Ti-Si-N films for application as heating layers for low-current phase-change memory, You Yin; Tomoyuki Noguchi; Kazuhiro Ota; Naoya Higano; Hayato Sone; Sumio Hosaka, 2009年, Journal of Physics: Conference Series, 152, 012026 1-6, 研究論文（学術雑誌）

  DOI
• Estimation of nano-sized pattern of calixarene and ZEP-520 resists by using EDD in Monte Carlo simulation, H. Zhang; T. Komori; Z. Mohamad; Y. Yin; S. Hosaka, 2013年, Key Engineering Materials, Key Engineering Materials, 534, 107, 112

  DOI
• Low power phase change memory via block copolymer self-assembly technology, Beom Ho Mun; Woon Ik Park; You Yin; Byoung Kuk You; Jae Jin Yun; Kung Ho Kim; Yeon Sik Jung; Keon Jae Lee, 2013年, Materials Research Society Symposium Proceedings, 1556, 66, 70, 研究論文（国際会議プロシーディングス）

  DOI
• TiSiN films by reactive RF magnetron co-sputtering for ultra-low-current phase-change memory, You Yin; Sumio Hosaka, 2013年, Applied Mechanics and Materials, 392, 702, 706, 研究論文（国際会議プロシーディングス）

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• Ultra-multilevel-storage phase‐change memory, Y. Yin; S. Hosaka, 2014年, Advanced Materials Research, Advanced Materials Research, 936, 599, 602, 研究論文（国際会議プロシーディングス）

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• 超高密度記録のための相変化チャンネルトランジスタの可能性－1つのトランジスタで、メモリ格納とスイッチオンオフ制御－, 保坂純男; You YIN; 曾根逸人, 2004年, 電子情報通信学会技術研究報告, Vol.103, No.729, pp. 1-6 (2004), 103, 729, 1, 6
• Electric properties of thin GeSbTe and AgInSbTe films by annealing, Y. Yin; H. Sone; S. Hosaka, 2004年, Proceedings of the 16th Symposium Phase Change Optical Information Storage PCOS 2004, Proceedings of the 16th Symposium Phase Change Optical Information Storage PCOS 2004, 23, 26
• Ultra Low Operation Current Lateral Phase-Change Memory, Y. Yin; D. Niida; N. Higano; A. Miyachi; H. Sone; S. Hosaka, 2006年, Extended Abstracts of the International Conference on Solid State Devices and Materials, Extended Abstracts of the International Conference on Solid State Devices and Materials, 2006, 562, 563
• GSTの結晶構造および表面形状とラテラル型相変化素子の相変化制御性, 保坂 純男; 宮地 晃平; 尹 友; 仁井田 大輔; 曾根 逸人, 2006年, 電子情報通信学会技術研究報告, Vol.105, No.654, 1, 6
• A novel multi-channel phase-change memory cell for multi-state storage with high controllability, You Yin; Kazuhiro Ohta; Hayato Sone; Sumio Hosaka, 2007年, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 778, 780, 研究論文（国際会議プロシーディングス）

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• 電子線描画法を用いた2Tb/in2超高密度パターンドメディア形成の可能性, 保坂純男; 田中保成; M. Zulfakri; 三富直彦; 尹友; 近藤祐治; 有明順, 2009年, 日本磁気学会第165回研究会第28回ナノマグネティックス専門研究会, 1, 6
• Multi-level storage in phase-change memory: from multi-layer to single layer, Y. Yin; S. Hosaka, 2010年, Proceedings of The 22nd Symposium on Phase Change Optical Information Storage (PCOS2010), Proceedings of The 22nd Symposium on Phase Change Optical Information Storage (PCOS2010)
• Random access multi-levels phase changing using pulse modulation, S. Hosaka; T. Noguchi; S. Kobayashi; R. I. B. Alip; Y. Yin, 2011年, Proceedings of the 23rd Symposium on Phase Change Optical Information Storage, Proceedings of the 23rd Symposium on Phase Change Optical Information Storage
• Pattern transfer of 23-nm-diameter block copolymer self-assembled nanodots using CF4 etching with carbon hard mask (CHM) as mask, Miftakhul Huda; Jing Liu; Zulfakri Bin Mohamad; You Yin; Sumio Hosaka, 2013年, Materials Science Forum, 737, 133, 136, 研究論文（国際会議プロシーディングス）

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• Current-driven crystallization promotion for multilevel storage in phase-change memory, Y. Yin; R. I. Alip; S. Hosaka, 2013年, Proceedings of the 24rd Symposium on Phase Change Oriented Science (PCOS2012), Proceedings of the 24rd Symposium on Phase Change Oriented Science (PCOS2012)
• Computational analysis of heavy ion-DNA interaction using molecular dynamics method, Akie Nagao; You Yin; Sumio Hosaka, 2013年, Key Engineering Materials, 643, 193, 197, 研究論文（国際会議プロシーディングス）

  DOI
• Observation of magnetic nanodot arrays using near-field polarization microscope, Ryosuke Takahashi; Tao Jin; Zulfakri Bin Mohamad; Hui Zhang; Miftakhul Huda; Vu Le Mine Nhat; You Yin; Sumio Hosaka, 2013年, Key Engineering Materials, 643, 9, 13, 研究論文（国際会議プロシーディングス）

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• Prototype of atomic force microscope with high resolution optical microscope for observing magnetic nanodot arrays, Tao Jin; Ryosuke Takahashi; Hui Zhang; You Yin; Sumio Hosaka, 2013年, Key Engineering Materials, 643, 185, 189, 研究論文（国際会議プロシーディングス）

  DOI
• Long range ordering of 5-nm-sized dot arrays with a pitch of 10 nm along EB-drawn Guide Lines using PS-PDMS self-assembly, Hui Zhang; Miftakhul Huda; Jing Liu; Yulong Zhang; Tao Jin; Sumio Hosaka; You Yin, 2013年, Key Engineering Materials, 643, 3, 7, 研究論文（国際会議プロシーディングス）

  DOI
• Three-dimensional simulation of proposed ring-confined-chalcogenide phase-change memory for reducing reset operation current, You Yin; Sumio Hosaka, 2016年, Key Engineering Materials, 698, 149, 153, 研究論文（国際会議プロシーディングス）

  DOI
• Effect of humidity and bias on the size of nanostructures fabricated by STM anodization and its application to patterns, You Yin, 2016年, Key Engineering Materials, 698, 35, 40, 研究論文（国際会議プロシーディングス）

  DOI
• Advanced nanofabrication and its application to nano phase-change memory for reducing writing current, You Yin; Dai Nishijo; Keita Sawao; Kazumasa Ohyama; Takashi Akahane; Takuya Komori; Miftakhul Huda; Hui Zhang; Sumio Hosaka, 2016年, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, 2016, ICSICT, 199, 202, 研究論文（国際会議プロシーディングス）

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• 相変化記録の多値化と高速化へのアプローチおよび微細性, 保坂 純男; 尹 友,張 慧, 2017年, 映像情報メディア学会技術報告（ITE Technical Report), 41, 21, 25, 30
• C-N-codoped Sb2Te3 chalcogenides for reducing writing current of phase-change devices, You Yin; Wataru Matsuhashi; Koji Niiyama; Jie Yang; Tao Wang; Jingze Li; Yang Liu; Qi Yu, 2020年10月, APPLIED PHYSICS LETTERS, 117, 15, 研究論文（学術雑誌）

  DOI
• Ferroelectric polarization and fatigue characterization in bismuth-based Aurivillius thin films at lower voltage, J. Yang; D. P. Song; Y. Yin; L. Z. Chen; L-Y. Chen; Y. Wang; J. Y. Wang, 2019年09月, MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 248, 研究論文（学術雑誌）

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• Porous equipotential body with heterogeneous nucleation sites: A novel 3D composite current collector for lithium metal anode, Weishang Jia; Tao Chen; Ying Wang; Siji Qu; Zeyu Yao; Yuchi Liu; You Yin; Wei Zou; Fu Zhou; Jingze Li, 2019年06月20日, Electrochimica Acta, 309, 460, 468, 研究論文（学術雑誌）

  DOI
• Chalcogenide-Based Artificial Intelligence Synaptic Device, You Yin; Ryoya Satoh; Keita Sawao, 2018年12月05日, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings, 研究論文（国際会議プロシーディングス）

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• Handwritten-Digit Recognition by Hybrid Convolutional Neural Network based on HfO2 Memristive Spiking-Neuron, J. J. Wang; S. G. Hu; X. T. Zhan; Q. Yu; Z. Liu; T. P. Chen; Y. Yin; Sumio Hosaka; Y. Liu, 2018年12月01日, Scientific Reports, 8, 1, 研究論文（学術雑誌）

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• Smart electronic skin having gesture recognition function by LSTM neural network, G. Y. Liu; D. Y. Kong; S. G. Hu; Q. Yu; Z. Liu; T. P. Chen; Y. Yin; Sumio Hosaka; Y. Liu, 2018年08月20日, Applied Physics Letters, 113, 8, 研究論文（学術雑誌）

  DOI
• Realization of a Power-Efficient Transmitter Based on Integrated Artificial Neural Network, Deyu Kong; Shaogang Hu; Yuancong Wu; Junjie Wang; Canlong Xiong; Qi Yu; Zhengyu Shi; Zhen Liu; Tupei Chen; You Yin; Sumio Hosaka; Yang Liu, 2018年, IEEE Access, 6, 68773, 68781, 研究論文（学術雑誌）

  DOI
• Low Power Phase Change Memory using Silicon Carbide as a Heater Layer, M. S. Aziz; Y. Yin; S. Hosaka; Z. Mohammed; R. I. Alip, 2015年, 4TH INTERNATIONAL CONFERENCE ON ELECTRONIC DEVICES, SYSTEMS AND APPLICATIONS 2015 (ICEDSA), 99, 研究論文（国際会議プロシーディングス）

  DOI
• Nanosecond-Order Fast Switching and Ultra-Multilevel Storage in Lateral GeTe and Ge1Sb4Te7-Based Phase-change Memories, You Yin; Sumio Hosaka, 2015年, PROCEEDINGS OF 2015 IEEE 11TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 研究論文（国際会議プロシーディングス）
• ULTRASMALL-VOLUME-CHANGE CHALCOGENIDE FOR PERFORMANCE IMPROVEMENT OF PHASE-CHANGE MEMORY, You Yin; Sumio Hosaka, 2014年, 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 研究論文（国際会議プロシーディングス）
• Emulating the paired-pulse facilitation of a biological synapse with a NiOx-based memristor, S. G. Hu; Y. Liu; T. P. Chen; Z. Liu; Q. Yu; L. J. Deng; Y. Yin; Sumio Hosaka, 2013年05月, APPLIED PHYSICS LETTERS, 102, 18, 研究論文（学術雑誌）

  DOI
• Comparison of Nano-sized Pattern of Calixarene and ZEP520 Resists by Using Energy Deposition Distribution, Hui Zhang; Takuya Komori; Zulfakri Mohamad; You Yin; Sumio Hosaka, 2013年, ADVANCED MICRO-DEVICE ENGINEERING III, 534, 107, +, 研究論文（国際会議プロシーディングス）

  DOI
• Evaluation of ordering of directed self-assembly of block copolymers with pre-patterned guides for bit patterned media, Takeshi Okino; Takuya Shimada; Akiko Yuzawa; Ryosuke Yamamoto; Naoko Kihara; Yoshiyuki Kamata; Akira Kikitsu; Takashi Akahane; You Yin; Sumio Hosaka, 2012年, ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES IV, 8323, 研究論文（国際会議プロシーディングス）

  DOI
• NANOMAGNETIC DOT ARRAYS FABRICATION BASED ON ELECTRON BEAM DRAWING AND ITS SIZE EFFECT, S. Hosaka; H. Sano; Y. Tanaka; M. Shirai; Z. Mohamad; Y. Tanaka; H. Sone; Y. Yin, 2009年, PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES, 456, +, 研究論文（国際会議プロシーディングス）
• Orientation-Controlled and Long-Range-Ordered Self-Assembled Nanodot Array for Ultrahigh-Density Bit-Patterned Media, Akahane, Takashi;Huda, Miftakhul;Tamura, Takuro;Yin, You;Hosaka, Sumio, 2011年, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 6

  DOI
• Nanometer resolution stress measurement of the Si gate using illumination-collection-type scanning near-field Raman spectroscopy with a completely metal-inside-coated pyramidal probe, Hosaka, Sumio;Aramomi, Yusuke;Sone, Hayato;Yin, You;Sato, Eiji;Tochigi, Kenji, 2011年, NANOTECHNOLOGY, NANOTECHNOLOGY, 22, 2

  DOI
• Fabrication of 10-nm-Order Block Copolymer Self-Assembled Nanodots for High-Density Magnetic Recording, Huda, Miftakhul;Akahane, Takashi;Tamura, Takuro;Yin, You;Hosaka, Sumio, 2011年, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 6

  DOI
• Long-range-ordering of self-assembled block copolymer nanodots using EB-drawn guide line and post mixing template, Hosaka, Sumio;Akahane, Takashi;Huda, Miftakhul;Tamura, Takuro;Yin, You;Kihara, Naoko;Kamata, Yoshiyuki;Kitsutsu, Akira, 2011年, MICROELECTRONIC ENGINEERING, MICROELECTRONIC ENGINEERING, 88, 8, 2571, 2575

  DOI
• Multilevel storage in lateral phase-change memory by promotion of nanocrystallization, Yin, You;Hosaka, Sumio, 2011年, MICROELECTRONIC ENGINEERING, MICROELECTRONIC ENGINEERING, 88, 8, 2794, 2796

  DOI
• Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory, Yoon, Jong Moon;Jeong, Hu Young;Hong, Sung Hoon;Yin, You;Moon, Hyoung Seok;Jeong, Seong-Jun;Han, Jun Hee;Kim, Yong In;Kim, Yong Tae;Lee, Heon;Kim, Sang Ouk;Lee, Jeong Yong, 2012年, JOURNAL OF MATERIALS CHEMISTRY, JOURNAL OF MATERIALS CHEMISTRY, 22, 4, 1347, 1351

  DOI
• Controllable Crystallization in Phase-Change Memory for Low-Power Multilevel Storage, Yin, You;Hosaka, Sumio, 2012年, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 6

  DOI
• Fabrication of high-density In3Sb1Te2 phase change nanoarray on glass-fabric reinforced flexible substrate, Yoon, Jong Moon;Shin, Dong Ok;Yin, You;Seo, Hyeon Kook;Kim, Daewoon;Kim, Yong In;Jin, Jung Ho;Kim, Yong Tae;Bae, Byeong-Soo;Kim, Sang Ouk;Lee, Jeong Yong, 2012年, NANOTECHNOLOGY, NANOTECHNOLOGY, 23, 25

  DOI
• Controlled promotion of crystallization for application to multilevel phase-change memory, Yin, You;Hosaka, Sumio, 2012年, APPLIED PHYSICS LETTERS, APPLIED PHYSICS LETTERS, 100, 25

  DOI
• Electron Beam Lithography of 15 x 15 nm(2) Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer, Komori, Takuya;Zhang, Hui;Akahane, Takashi;Mohamad, Zulfakri;Yin, You;Hosaka, Sumio, 2012年, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 6

  DOI
• Fabrication of 5-nm-Sized Nanodots Using Self-Assembly of Polystyrene-Poly(dimethylsiloxane), Huda, Miftakhul;Liu, Jing;Yin, You;Hosaka, Sumio, 2012年, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 6

  DOI
• Self-Assembled Incorporation of Modulated Block Copolymer Nanostructures in Phase-Change Memory for Switching Power Reduction, Park, Woon Ik;You, Byoung Kuk;Mun, Beom Ho;Seo, Hyeon Kook;Lee, Jeong Yong;Hosaka, Sumio;Yin, You;Ross, C. A.;Lee, Keon Jae;Jung, Yeon Sik, 2013年, ACS NANO, ACS NANO, 7, 3, 2651, 2658

  DOI
• Current density enhancement nano-contact phase-change memory for low writing current, Yin, You;Hosaka, Sumio;Park, Woon Ik;Jung, Yeon Sik;Lee, Keon Jae;You, Byoung Kuk;Liu, Yang;Yu, Qi, 2013年, APPLIED PHYSICS LETTERS, APPLIED PHYSICS LETTERS, 103, 3

  DOI
• Recrystallization process controlled by staircase pulse in phase change memory, Yin, You;Kobayashi, Ryota;Hosaka, Sumio, 2014年, MICROELECTRONIC ENGINEERING, MICROELECTRONIC ENGINEERING, 113, 61, 65

  DOI
• Volume-change-free GeTeN films for high-performance phase-change memory, Yin, You;Zhang, Hui;Hosaka, Sumio;Liu, Yang;Yu, Qi, 2013年, JOURNAL OF PHYSICS D-APPLIED PHYSICS, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 46, 50

  DOI
• Ordering of self-assembled 5-nm-diameter poly(dimethylsiloxane) nanodots with sub-10nm pitch using ultra-narrow electron-beam-drawn guide lines and three-dimensional control, Zhang, Hui;Hosaka, Sumio;Yin, You, 2014年, APPLIED PHYSICS LETTERS, APPLIED PHYSICS LETTERS, 104, 9

  DOI
• Effect of a separate heater structure for crystallisation to enable multilevel storage phase-change memory, Alip, Rosalena Irma;Mohamad, Zulfakri;Yin, You;Hosaka, Sumio, 2014年, INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 11, 5-8, 389, 395

  DOI
• Attempts to form the 10-nm-order pitch of self-assembled nanodots using PS-PDMS block copolymer, Huda, Miftakhul;Liu, Jing;Bin Mohamad, Zulfakri;Yin, You;Hosaka, Sumio, 2014年, INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 11, 5-8, 425, 433

  DOI
• Controlling of 6 nm Sized and 10 nm Pitched Dot Arrays Ordered along Narrow Guide Lines Using PS-PDMS Self-Assembly, Hosaka, Sumio;Akahane, Takashi;Huda, Miftakhul;Zhang, Hui;Yin, You, 2014年, ACS APPLIED MATERIALS & INTERFACES, ACS APPLIED MATERIALS & INTERFACES, 6, 9, 6208, 6211

  DOI
• Estimation of pattern resolution using NaCl high-contrast developer by Monte Carlo simulation of electron beam lithography, Zhang, Hui;Huda, Miftakhul;Komori, Takuya;Zhang, Yulong;Yin, You;Hosaka, Sumio, 2014年, MICROELECTRONIC ENGINEERING, MICROELECTRONIC ENGINEERING, 121, 142, 146

  DOI
• Ordering of 6-nm-sized nanodot arrays with 10-nm-pitch using self-assembled block copolymers along electron beam-drawn guide-lines, Hosaka, Sumio;Akahane, Takashi;Huda, Miftakhul;Komori, Takuya;Zhang, Hui;Yin, You, 2014年, MICROELECTRONIC ENGINEERING, MICROELECTRONIC ENGINEERING, 123, 54, 57

  DOI
• gamma-Ray Radiation Effects on an HfO2-Based Resistive Memory Device, Hu, Shaogang;Liu, Yang;Chen, Tupei;Guo, Qi;Li, Yu-Dong;Zhang, Xing-Yao;Deng, L. J.;Yu, Qi;Yin, You;Hosaka, Sumio, 2018年, IEEE TRANSACTIONS ON NANOTECHNOLOGY, IEEE TRANSACTIONS ON NANOTECHNOLOGY, 17, 1, 61, 64

  DOI
• Formation of 7-nm-wide Line&Spaces in Half Pitch by 3 Dimensional Self-assembly of Nano-dots Using Sphere Type PS-PDMS, Sumio Hosaka; Hui Zhang; You Yin; Hayato Sone, 2021年12月30日, European Journal of Applied Physics, 3, 6, 84, 90, 研究論文（学術雑誌）

  DOI
• First-principles calculation of photocurrent in monolayer silicene sheet under small voltages, Wang, Tao;Chen, Minyan;Fan, Bowen;Liu, Yan;Sheng, Kuang;Yin, You;Xie, Yiqun, 2017年, OPTICS COMMUNICATIONS, OPTICS COMMUNICATIONS, 395, 289, 292

  DOI
• The phosphorene under the external electronic field and strain, Wang, Tao;Liu, Yan;Wen, Wen;Guo, Wei;Yin, You, 2017年, INTERNATIONAL JOURNAL OF MODERN PHYSICS C, INTERNATIONAL JOURNAL OF MODERN PHYSICS C, 28, 12

  DOI
• Realization of a Power-Efficient Transmitter Based on Integrated Artificial Neural Network, Kong, Deyu;Hu, Shaogang;Wu, Yuancong;Wang, Junjie;Xiong, Canlong;Yu, Qi;Shi, Zhengyu;Liu, Zhen;Chen, Tupei;Yin, You;Hosaka, Sumio;Liu, Yang, 2018年, IEEE ACCESS, IEEE ACCESS, 6, 68773, 68781

  DOI
• Porous equipotential body with heterogeneous nucleation sites: A novel 3D composite current collector for lithium metal anode, Jia, Weishang;Chen, Tao;Wang, Ying;Qu, Siji;Yao, Zeyu;Liu, Yuchi;Yin, You;Zou, Wei;Zhou, Fu;Li, Jingze, 2019年, ELECTROCHIMICA ACTA, ELECTROCHIMICA ACTA, 309, 460, 468

  DOI
• C-N-codoped Sb2Te3 chalcogenides for reducing writing current of phase-change devices, Yin, You;Matsuhashi, Wataru;Niiyama, Koji;Yang, Jie;Wang, Tao;Li, Jingze;Liu, Yang;Yu, Qi, 2020年, APPLIED PHYSICS LETTERS, APPLIED PHYSICS LETTERS, 117, 15

  DOI
• A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low RESET Current and Power Consumption, Yin You;Miyachi Akihira;Niida Daisuke;SONE Hayato;HOSAKA Sumio, 2006年07月, Japanese journal of applied physics. Pt. 2, Letters, Japanese journal of applied physics Pt. 2 Letters & express letters, 45, 24, L726, L729
• Memory Effect in Metal-Chalcogenide-Metal Structures for Ultrahigh-Density Nonvolatile Memories, Yin You;Sone Hayato;Hosaka Sumio, 2006年06月, Japanese journal of applied physics. Pt. 1, Regular papers & short notes, Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers, 45, 6, 4951, 4954
• Annealing effect of phase change and current control in phase change channel transistor memory, YIN You;NIIDA Daisuke;SONE Hayato;HOSAKA Sumio, 2005年09月, Extended abstracts of the ... Conference on Solid State Devices and Materials, 2005, 644, 645
• Ultra Low Operation Current Lateral Phase-Change Memory, YIN You;NIIDA Daisuke;HIGANO Naoya;MIYACHI Akihira;SONE Hayato;HOSAKA Sumio, 2006年09月, Extended abstracts of the ... Conference on Solid State Devices and Materials, 2006, 562, 563
• Extremely Small Proximity Effect in 30keV Electron Beam Drawing with Thin Calixarene Resist for 20 x 20nm^2 Pitch Dot Arrays, Hosaka Sumio;Mohamad Zulfakri;Shira Masumi;SANO Hirotaka;YIN You;MIYACHI Akihira;SONE Hayato, 2008年02月, Applied physics express, Applied physics express, 1, 2, "27003, 1"-"27003-3"
• 超高密度記録のための相変化チャンネルトランジスタの可能性 : 1つのトランジスタで、メモリ格納とスイッチオンオフ制御, 保坂 純男;尹 友;曾根 逸人, 2004年03月, 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス, Technical report of IEICE. SDM, 103, 729, 1, 6
• 相変化メモリの原理と将来性, 保坂 純男;尹 友, 2012年07月, 電子情報通信学会技術研究報告. MR, 磁気記録, IEICE technical report. Magnetic recording, 112, 137, 1, 11
• Dependences of Electrical Properties of Thin GeSbTe and AgInSbTe Films on Annealing, Yin You;Sone Hayato;Hosaka Sumio, 2005年, Japanese Journal of Applied Physics, Japanese Journal of Applied Physics, 44, 8, 6208, 6212
• Step-In Mode NC-AFM Using a Quadrature Frequency Demodulator for Observing High-Aspect Ratio Structures in Air, Hosaka Sumio;Terauchi Daisuke;Takizawa Takayuki;Yin You;Sone Hayato, 2011年, e-Journal of Surface Science and Nanotechnology, e-Journal of Surface Science and Nanotechnology, 9, 122, 125
• Scanning electron microscope for in situ study of crystallization of Ge2Sb2Te5 in phase-change memory., Yin You;Niida Daisuke;Ota Kazuhiro;Sone Hayato;Hosaka Sumio, The Review of scientific instruments, The Review of scientific instruments, 78, 12

  DOI
• Observation of Si pattern sidewall using inclination atomic force microscope for evaluation of line edge roughness., Hosaka Sumio;Koyabu Hirokazu;Noro Masamichi;Takizawa Katsuyuki;Sone Hayato;Yin You, Journal of nanoscience and nanotechnology, Journal of nanoscience and nanotechnology, 10, 7

  DOI
• Nanometer resolution stress measurement of the Si gate using illumination-collection-type scanning near-field Raman spectroscopy with a completely metal-inside-coated pyramidal probe., Hosaka Sumio;Aramomi Yusuke;Sone Hayato;Yin You;Sato Eiji;Tochigi Kenji, 2010年12月08日, Nanotechnology, Nanotechnology, 22, 2

  DOI
• Controlling of 6 nm sized and 10 nm pitched dot arrays ordered along narrow guide lines using PS-PDMS self-assembly., Hosaka Sumio;Akahane Takashi;Huda Miftakhul;Zhang Hui;Yin You, 2014年04月30日, ACS applied materials & interfaces, ACS applied materials & interfaces, 6, 9

  DOI
• Flexible one diode-one phase change memory array enabled by block copolymer self-assembly., Mun Beom Ho;You Byoung Kuk;Yang Se Ryeun;Yoo Hyeon Gyun;Kim Jong Min;Park Woon Ik;Yin You;Byun Myunghwan;Jung Yeon Sik;Lee Keon Jae, 2015年03月31日, ACS nano, ACS nano, 9, 4

  DOI
• Memory effect in metal-chalcogenide-metal structures for ultrahigh-density nonvolatile memories, Yin, You;Sone, Hayato;Hosaka, Sumio, 2006年, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45, 6A, 4951, 4954

  DOI
• A novel lateral phase-change random access memory characterized by ultra low RESET current and power consumption, Yin, You;Miyachi, Akihira;Niida, Daisuke;Sone, Hayato;Hosaka, Sumio, 2006年, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 45, 24-28, L726, L729

  DOI
• Simulation of proposed confined-chalcogenide phase-change random access memory for low reset current by finite element modelling, Yin, You;Sone, Hayato;Hosaka, Sumio, 2006年, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45, 8A, 6177, 6181

  DOI
• Finite element analysis of dependence of programming characteristics of phase-change memory on material properties of chalcogenides, Yin, You;Sone, Hayato;Hosaka, Surnio, 2006年, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45, 11, 8600, 8603

  DOI
• Prototype of phase-change channel transistor for both nonvolatile memory and current control, Hosaka, Sumio;Miyauchi, Kunihiro;Tamura, Takuro;Yin, You;Sone, Hayato, 2007年, IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE TRANSACTIONS ON ELECTRON DEVICES, 54, 3, 517, 523

  DOI
• Nano-dot arrays with a bit pitch and a track pitch of 25 nm formed by EB writing for 1 Tb/in(2) storage, Hosaka, Sumio;Sano, Hirotaka;Shirai, Masumi;Yin, You;Sone, Hayato, 2007年, MICROELECTRONIC ENGINEERING, MICROELECTRONIC ENGINEERING, 84, 5-8, 802, 805

  DOI
• A chalcogenide-based device with potential for multi-state storage, Yin, You;Sone, Hayato;Hosaka, Sumio, 2007年, MICROELECTRONICS JOURNAL, MICROELECTRONICS JOURNAL, 38, 6-7, 695, 699

  DOI
• Characterization of nitrogen-doped Sb2Te3 films and their application to phase-change memory, Yin, You;Sone, Hayato;Hosaka, Sumio, 2007年, JOURNAL OF APPLIED PHYSICS, JOURNAL OF APPLIED PHYSICS, 102, 6

  DOI
• Scanning electron microscope for in situ study of crystallization of Ge2Sb2Te5 in phase-change memory, Yin, You;Niida, Daisuke;Ota, Kazuhiro;Sone, Hayato;Hosaka, Sumio, 2007年, REVIEW OF SCIENTIFIC INSTRUMENTS, REVIEW OF SCIENTIFIC INSTRUMENTS, 78, 12

  DOI
• Lateral SbTeN based multi-layer phase change memory for multi-state storage, Yin, You;Sone, Hayato;Hosaka, Sumio, 2007年, MICROELECTRONIC ENGINEERING, MICROELECTRONIC ENGINEERING, 84, 12, 2901, 2906

  DOI
• Extremely small proximity effect in 30keV electron beam drawing with thin calixarene resist for 20 x 20 nm(2) pitch dot arrays, Hosaka, Sumio;Mohamad, Zulfakri;Shira, Masumi;Sano, Hirotaka;Yin, You;Miyachi, Akihira;Sone, Hayato, 2008年, APPLIED PHYSICS EXPRESS, APPLIED PHYSICS EXPRESS, 1, 2

  DOI
• Ultramultiple-level storage in TiN/SbTeN double-layer cell for high-density nonvolatile memory, Yin, You;Higano, Naoya;Sone, Hayato;Hosaka, Sumio, 2008年, APPLIED PHYSICS LETTERS, APPLIED PHYSICS LETTERS, 92, 16

  DOI
• Nano-dot and -pit arrays with a pitch of 25 nm x 25 nm fabricated by EB drawing, RIE and nano-imprinting for 1 Tb/in(2) storage, Hosaka, Sumio;Mohamad, Zulfakri;Shirai, Masumi;Sano, Hirotaka;Yin, You;Miyachi, Akihira;Sone, Hayato, 2008年, MICROELECTRONIC ENGINEERING, MICROELECTRONIC ENGINEERING, 85, 5-6, 774, 777

  DOI
• Multilevel storage in lateral top-heater phase-change memory, Yin, You;Ota, Kazuhiro;Higano, Naoya;Sone, Hayato;Hosaka, Sumio, 2008年, IEEE ELECTRON DEVICE LETTERS, IEEE ELECTRON DEVICE LETTERS, 29, 8, 876, 878

  DOI
• Multilevel Storage in N-Doped Sb2Te3-Based Lateral Phase Change Memory with an Additional Top TiN Layer, Yin, You;Ota, Kazuhiro;Noguchi, Tomoyuki;Ohno, Hiroki;Sone, Hayato;Hosaka, Sumio, 2009年, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 4

  DOI
• Programming margin enlargement by material engineering for multilevel storage in phase-change memory, Yin, You;Noguchi, Tomoyuki;Ohno, Hiroki;Hosaka, Sumio, 2009年, APPLIED PHYSICS LETTERS, APPLIED PHYSICS LETTERS, 95, 13

  DOI
• Observation of Si Pattern Sidewall Using Inclination Atomic Force Microscope for Evaluation of Line Edge Roughness, Hosaka, Sumio;Koyabu, Hirokazu;Noro, Masamichi;Takizawa, Katsuyuki;Sone, Hayato;Yin, You, 2010年, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 10, 7, 4522, 4527

  DOI
• Possibility of Forming 18-nm-Pitch Ultrahigh Density Fine Dot Arrays for 2 Tbit/in.(2) Patterned Media Using 30-keV Electron Beam Lithography, Hosaka, Sumio;Tanaka, Yasunari;Shirai, Masumi;Mohamad, Zulfakri;Yin, You, 2010年, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPANESE JOURNAL OF APPLIED PHYSICS, 49, 4

  DOI
• Possibility of Freely Achievable Multilevel Storage of Phase-Change Memory by Staircase-Shaped Pulse Programming, Yin, You;Noguchi, Tomoyuki;Hosaka, Sumio, 2011年, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 10

  DOI
• Low-Reset-Current Ring-Confined-Chalcogenide Phase Change Memory, Yin, You;Hosaka, Sumio, 2012年, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 10

  DOI
• Simulation of Fine Resist Profile Formation by Electron Beam Drawing and Development with Solubility Rate Based on Energy Deposition Distribution, Zhang, Hui;Komori, Takuya;Zhang, Yulong;Yin, You;Hosaka, Sumio, 2013年, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 12

  DOI
• Tunable bandgap of monolayer black phosphorus by using vertical electric field: A DFT study, Wang, Tao;Liu, Yan;Guo, Qing;Zhang, Bin;Sheng, Kuang;Li, Can;Yin, You, 2015年, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 66, 6, 1031, 1034

  DOI
• Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-Change Nanostructures with an Extremely Low Switching Current, Park, Woon Ik;Kim, Jong Min;Jeong, Jae Won;Hur, Yoon Hyoung;Choi, Young Joong;Kwon, Se-Hun;Hong, Seungbum;Yin, You;Jung, Yeon Sik;Kim, Kwang Ho, 2015年, CHEMISTRY OF MATERIALS, CHEMISTRY OF MATERIALS, 27, 7, 2673, 2677

  DOI
• Flexible One Diode-One Phase Change Memory Array Enabled by Block Copolymer Self-Assembly, Mun, Beom Ho;You, Byoung Kuk;Yang, Se Ryeun;Yoo, Hyeon Gyun;Kim, Jong Min;Park, Woon Ik;Yin, You;Byun, Myunghwan;Jung, Yeon Sik;Lee, Keon Jae, 2015年, ACS NANO, ACS NANO, 9, 4, 4120, 4128

  DOI
• The effect of h-BN buffer layers in bilayer graphene on Co (111), Li, Can;Liu, Yan;Zhang, Bin;Wang, Tao;Guo, Qing;Sheng, Kuang;Yin, You, 2015年, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 66, 10, 1631, 1636

  DOI
• Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current, Yin, You;Wang, Tao, 2015年, IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE TRANSACTIONS ON ELECTRON DEVICES, 62, 7, 2184, 2189

  DOI
• Bandgap engineering of monolayer MoS2 under strain: A DFT study, Li, Can;Fan, Bowen;Li, Weiyi;Wen, Luowei;Liu, Yan;Wang, Tao;Sheng, Kuang;Yin, You, 2015年, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 66, 11, 1789, 1793

  DOI
• Oxygen-doped Sb2Te3 for high-performance phase-change memory, Yin, You;Morioka, Shota;Kozaki, Shun;Satoh, Ryoya;Hosaka, Sumio, 2015年, APPLIED SURFACE SCIENCE, APPLIED SURFACE SCIENCE, 349, 230, 234

  DOI
• Ultra-multiple and reproducible resistance levels based on intrinsic crystallization properties of Ge1Sb4Te7 film, Yin, You;Iwashita, Shota;Hosaka, Sumio;Wang, Tao;Li, Jingze;Liu, Yang;Yu, Qi, 2016年, APPLIED SURFACE SCIENCE, APPLIED SURFACE SCIENCE, 369, 348, 353

  DOI
• The dependence of crystallization on temperature in the nanosecond timescale for GeTe-based fast phase-change resistor, Zhang, Hui;Zhang, Yulong;Yin, You;Hosaka, Sumio, 2016年, CHEMICAL PHYSICS LETTERS, CHEMICAL PHYSICS LETTERS, 650, 102, 106

  DOI
• Sub 10 ns fast switching and resistance control in lateral GeTe-based phase-change memory, Yin, You;Zhang, Yulong;Takehana, Yousuke;Kobayashi, Ryota;Zhang, Hui;Hosaka, Sumio, 2016年, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPANESE JOURNAL OF APPLIED PHYSICS, 55, 6

  DOI
• Scanning Near Field Circular Polarization Optical Microscope for Measuring Magnetic Nanodot Arrays, Jin, Tao;Shen, Lu;Hosaka, Sumio;Yin, You;Miura, Takeshi;Hou, Wenmei, 2017年, SCIENCE OF ADVANCED MATERIALS, SCIENCE OF ADVANCED MATERIALS, 9, 1, 151, 155

  DOI
• Ab initio Study of Tunable Band Gap of Monolayer and Bilayer Phosphorene by the Vertical Electronic Field, Wang Tao;Guo Wei;Wen Luowei;Liu Yan;Zhang Bin;Sheng Kuang;Yin You, 2017年, JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION, JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION, 32, 1, 213, 216

  DOI
• GSTの結晶構造および表面形状とラテラル型相変化素子の相変化制御性, 保坂 純男;宮地 晃平;尹 友;仁井田 大輔;曾根 逸人, 2006年03月, 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス, IEICE technical report, 105, 654, 1, 6
• Parallel metal-insulator-metal diode with an ultrathin spin-coated hydrogen silsesquioxane insulating layer, Takashi Akahane; Sho Ishii; Keisuke Yanagisawa; You Yin, 2023年06月01日, Japanese Journal of Applied Physics, 62, SG, 研究論文（学術雑誌）

  DOI
• Characterization of undoped and N-Ti codoped Zn5Sb3Te chalcogenides, Takao Fujiwara; Koji Niiyama; You Yin, 2023年06月01日, Japanese Journal of Applied Physics, 62, 研究論文（学術雑誌）

  DOI
• Braille recognition by E-skin system based on binary memristive neural network, Y. H. Liu; J. J. Wang; H. Z. Wang; S. Liu; Y. C. Wu; S. G. Hu; Q. Yu; Z. Liu; T. P. Chen; Y. Yin; Y. Liu, 2023年04月03日, Scientific Reports, 13, 1, 研究論文（学術雑誌）

  DOI
• Chalcogenides and their applications to advanced phase-change-devices toward future IoT era, You Yin; Wataru Matsuhashi; Koji Niiyama; Dai Nishijo; Keita Sawao, 2020年11月03日, 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings, 研究論文（国際会議プロシーディングス）

  DOI
• N-Doped GeTe for Phase-Change Device with High Reliability, S. Yahagi; Y. Yin, 2023年, Journal of Mechanical and Electrical Intelligent System, 6, 10, 14
• O-doped GeTe/Sb₂Te₃ multilayer chalcogenide for multi-level phase-change device, Mutsumi Miuchi; Kazuki Matsuda; Shota Yoshimoto; Eiji Sawai; You Yin, 2025年04月01日, Japanese Journal of Applied Physics, 64, 4, 04SP29, 04SP29, 研究論文（学術雑誌）

  DOI
• Effect of RESET operation of CiM with PCM on recognition accuracy, Kento Yano; You Yin; Kazuteru Namba, 2024年07月, ICCE-Taiwan, 3, 4
• N-O Doped Sb2Te3 Phase-Change Materials for High Performance Artificial Synaptic Device, You Yin; Koji Niiyama, 2024年03月, IAEAC, 7, 1585

MISC

• Electromagnetic Analysis of Antenna Used for Optical Rectenna, K. Yanagisawa, T. Akahane, and Y. Yin, 2020年12月
• Measurement of coercive force enhanced by nanometer-sizing of magnetic dot by X-ray magnetic circular dichroism (XMCD), Sumio Hosaka; Zulfakri Mohamad; You Yin; Hiroshi Sakurai; Yuji Kondo; Jun Ariake; Naoki Honda; Motohiro Suzuki, 2013年, ADVANCED MICRO-DEVICE ENGINEERING III, 534, 122, +

  DOI
• 高密度パターンドメディアのための電子線描画ポスト格子とガイドラインによる自己組織化パターンの規則配列制御, 赤羽隆志; HUDA Mifutakhul; 田村拓郎; YIN You; 保坂純男; 木原尚子; 鎌田芳幸; 喜々津哲, 2010年08月30日, 応用物理学会学術講演会講演予稿集(CD-ROM), 応用物理学会学術講演会講演予稿集(CD-ROM), 71st, ROMBUNNO.14A-NC-11
• 高密度磁気配録のためのブロック共重合体による自己組織化10mmナノドット形成, HUDA Miftakhul; 赤羽隆志; 田村拓郎; YIN You; 保坂純男; 木原尚子; 鎌田芳幸; 喜々津哲, 2010年08月30日, 応用物理学会学術講演会講演予稿集(CD-ROM), 応用物理学会学術講演会講演予稿集(CD-ROM), 71st, ROMBUNNO.14A-NC-10
• 相変化メモリの原理と将来性, 保坂 純男; 尹 友, 2012年07月12日, 電子情報通信学会技術研究報告. MR, 磁気記録, IEICE technical report. Magnetic recording, 112, 137, 1, 11
• 相変化メモリの原理と将来性 (マルチメディアストレージ), 保坂 純男; 尹 友, 2012年07月, 映像情報メディア学会技術報告, 36, 28, 1, 11
• Annealing effect of phase change and current control in phase change channel transistor memory, YIN You; NIIDA Daisuke; SONE Hayato; HOSAKA Sumio, 2005年09月13日, Extended abstracts of the ... Conference on Solid State Devices and Materials, 2005, 644, 645

書籍等出版物

• State-of-the-Art of Quantum Dot System Fabrications, 2012年, ISBN: 9789535106494

講演・口頭発表等

• Doped Chalcogenides for High-Performance Phase Change Devices, Y. Yin, M. Miuchi, S. Yahagi, and T. Fujiwara, 2023 IEEE 15th International Conference on ASIC (ASICON 2023), 2023年10月24日, 2023年10月27日
• Electromagnetic Analysis of Antenna Used for Optical Rectenna, K. Yanagisawa, T. Akahane, and Y. Yin, International Conference on Technology and Social Science 2020 (ICTSS2020), 2020年12月
• “Nanosecond-Order Fast Switching and Ultra-Multilevel Storage in Lateral GeTe and Ge1Sb4Te7-Based Phase-Change Memories”, The 11th International Conference on ASIC (ASICON 2015), 2015年
• “Crystal growth control in chalcogenide and its application to multilevel storage in phase-change memory”, The Collaborative Conference on Crystal Growth (3CG 2015),, 2015年12月, 国際会議
• “Fast switching and resistance control in chalcogenide-based memory device”, The Collaborative Conference on Crystal Growth (3CG 2016), 2016年
• “Multilevel Storage in Lateral Phase-Change Memory”, 2016 International Workshop on Information Storage / 10th International Symposium on Optical Storage (IWIS/ISOS 2016), 2016年04月
• [招待講演]“相変化記録の多値化と高速化へのアプローチおよび微細性”, MR ITE-MMS, 2017年07月
• “Properties of N-doped Sb2Te3 Film and Its Application to Artificial Intelligence Synaptic Device”, International Conference on Technology and Social Science 2018 (ICTSS 2018), 2018年04月, 国際会議
• “High-performance phase-change memory devices”, 3rd International Conference on Engineering and Its Education (3rd ICAEE 2018), 2018年10月, 国際会議
• “Chalcogenide-based Artificial Intelligence Synaptic Device”, 2018 IEEE 14th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2018), 2018年11月, 国際会議
• “Fabrication of nanodot array and its characterization by scanning near field circular polarization optical microscope”, the 5th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2018), 2018年11月, 国際会議
• Realization of Flexible Block Copolymer-Incorporated One Diode-One Phase Change Memory Array on Plastic Substrate, 2015 MRS Fall Meeting, Boston, 2015年12月
• Resistance Control for Multilevel Storage in Phase-Change Memory by Pulse Engineering, The 7th IEEE international Nanoelectronics Conference 2016 (INEC 2016), 2016年05月
• “Advanced Nanofabrication and its Application to Nano Phase-Change Memory for Reducing Writing Current”, 2016 IEEE 13th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2016), 2016年10月
• Nano Phase-Change Memory Array, 3rd International Symposium of Gunma University Medical Innovation (GUMI) and 8th International Conference on Advanced Micro-Device Engineering (AMDE), 2016年12月
• Phase-Change Materials and Memory Devices for IoT Application, The IEEE 12th International Conference on ASIC (ASICON 2017), 2017年10月
• N-Sb2Te3を用いたシナプス素子に関する研究, The 14th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, 2017年11月
• 有限要素法による低動作電流相変化メモリの検討, The 14th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, 2017年11月
• “High-Performance Phase-Change Memory”, Gunma University International Symposium for Collaboration of Research and Education 2018 (GUISCRE2018), 2018年03月
• C-doped and C-N-codoped Sb2Te3 Chalcogenides for Reducing Power Consumption of Phase-change Memory, GUMI & AMDE2018, 2018年12月
• Nanostructure-incorporated Phase-change Memory, GUMI & AMDE2018, 2018年12月
• Ultrahigh-density Nano Phase-change Memory Array, Gunma International Symposium 2018 on Membranes, 2D Matters and Device Applications, 2018年01月
• N-doped Chalcogenide Films and Their Application to Multi-level Storage Phase-change Memory, Gunma International Symposium 2018 on Membranes, 2D Matters and Device Applications, 2018年01月
• Phase-change Memory with Low Programing Current and Power Consumption for IoT Application, Gunma International Symposium 2018 on Membranes, 2D Matters and Device Applications, 2018年01月
• N-doped Sb2Te3 synaptic device for brain-like computer, Gunma International Symposium 2018 on Membranes, 2D Matters and Device Applications, 2018年01月
• Fabrication of Nanometer Sized Si Dot Arrays Using Reactive Ion Etching with Metal Dot Arrays, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010年
• Pico-Newton Controlled Step-in Mode NC-AFM Using a Quadrature Demodulator and a Slim Probe in Air for CD-AFM, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010年
• Monte Carlo Simulation of Electron Scattering Processes for High-Resolution Electron Beam Lithography, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010年
• Guide Pattern Functionalization for Regularly Arranged PS-PDMS Self-Assembled Nanodot Pattern by Brush Processing, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010年
• Formation of 12-nm Nanodot Pattern by Diblock Copolymer Self-Assembly Technique, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010年
• Random-Access Multilevel Storage in Phase-Change Memory by Staircase-Like Pulse Programming, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010年
• Challenge to form 25x25 nm2 pitch dot on magnetic thin film on glass substrate for 1 Tb/in2 magnatic strage, 2nd International Workshop on Nanotechnology, 2009年
• Near-filed Raman spectroscopy using illumination-collection mode with typical AFM pyramidal probe, 2nd International Workshop on Nanotechnology, 2009年
• Multiple-Level Storage in N-doped-SbTe Phase-Change Memory with an Additional Top TiN Layer, 2nd International Workshop on Nanotechnology, 2009年
• Research activities on nanotechnology in Hosaka Lab, 2nd International Workshop on Nanotechnology, 2009年
• Small consumption power and multi-level storage in lateral type phase-change memory with a top heater, PCOS 2008, 2008年
• 20 nm x 20 nm pitch fine dot arrays formed by 30 keV EB lithography and ion-milling, MRS International Materials Research Conference 2008, 2008年
• Fabrication of fine magnetic column arrays by 30 keV EB lithography and ion-milling, 34th International Conference on Micro- and Nano-Engineering 2008, 2008年
• Low power writing in lateral type phase-change memory, 2008 European/Phase Change and Ovonics Symposium, 2008年
• Multi-level-storage in lateral SbTeN-based phase-change memory with an additional top TiN layer, Extended Abstracts of the International Conference on Solid State Devices and Materials, 2008年
• Formation of 20 nm x 20 nm fine pitch dot arrays by 30 keV EB lithography, The International MRS 2008 Conference Beijing AAA Satellite Meeting on Advanced Technologies for Advanced Characterizations of Advanced Materials, 2008年
• Reactively sputtered Ti-Si-N films for application to heating layer in low-current phase-change memory, MRS International Materials Research Conference 2008, 2008年
• Ultramultiple-level storage in N-doped-Sb2Te3 phase-change memory with an additional top TIN layer, The International MRS 2008 Conference Beijing AAA Satellite Meeting on Advanced Technologies for Advanced Characterizations of Advanced Materials, 2008年
• Nanometer scale studies of phase-change material using NC-AFM, XRD, and TEM, The 2nd Gunma International Symposium on Chemistry, 2007年
• Direct and indirect heating of low power lateral type PCMD, 1st Surface and Nano Science Workshop, 2007年
• Nano-dot arrays with a pitch of 25 nm x 25nm written by EB writer for over 1 Tb/in2 storage, 1st Surface and Nano Science Workshop, 2007年
• Characteristics of N-doped Sb2Te3 Films by X-Ray Diffraction and Resistance Measurement for Phase-Change Memory, 2007 MRS Spring Meeting, 2007年
• UHV NC-AFM Observation of Surface Structure and Grain Size Changes of Ge2Sb2Te5 Films by Annealing Effect, The 14th International Colloquium on Scanning Probe Microscopy, 2006年
• A Novel Multi-Channel Phase-Change Memory Cell for Multi-State Storage with High Controllability, 8th Intern. Conf. on Solid-State and Integrated Circuit Technology, 2006年
• Thickness Dependences of Phase Change and Channel Current Control in Phase-Change Channel Transistor, 2005 IEEE International Conference on Electron Devices and Solid-State Circuits, 2005年
• Annealing effect of phase change and current control in phase change channel transistor memory, 2005 Intern. Conf. Solid State Devices and Materials (SSDM 2005), 2005年
• Electric properties of thin GeSbTe and AgInSbTe films by annealing, 16th Symposium Phase Change Optical Information Storage PCOS 2004, 2004年
• Large Resistance Ratio for High Reliability of Multi-Level Storage in Phase-Change Memory, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009年
• Guide Pattern for Long-Range-Order Nanofabrication of Self-Assembled Block Copolymers, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009年
• Self-Assembled Nanodot Fabrication by Using Diblock Copolymer, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009年
• Fabrication of Si Dot Arrays by EB Lithography and Dry Etching for Quantum Dot Solar Cells, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009年
• Prototype of illumination-collection mode scanning near-field optical microscopy and Raman spectroscopy with aperture-less pyramidal probe, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009年
• Material engineering in phase-change memory for low power consumption and multi-level storage, the 5th Interna-tional Conference on Electron Devices and Solid State Circuits, 2009年
• Multi-Level Storage in Lateral Phase-Change Memory, the International Conference on Nanoscience and Technology, China 2009 (ChinaNANO 2009), 2009年
• Nano magnetic column arrays fabrication for patterned media in magnetic recording using EB lithography and ion milling, the 5th Interna-tional Conference on Electron Devices and Solid State Circuits, 2009年
• Nano magnetic column arrays fabrication for patterned media in magnetic recording using EB lithography and ion milling, the International Conference on Nanoscience and Technology, China 2009 (ChinaNANO 2009), 2009年
• Research on low power consumption and multi-level storage in phase-change memory, the 2nd NSC-JST Nano Device Workshop, 2009年
• Challenge to form 25 × 25 nm2 pitch dot on magnetic thin film on glass substrate for 1Tb/in2 magnetic storage, 2nd International Workshop on Nanotechnology, 2009年
• Ultra low operation current lateral phase-change memory, the International Conference on Solid State Devices and Materials, 2006年
• Lateral type phase-change memory with top heater for low-power consumption, 2nd International Workshop on Nanotechnology, 2009年
• Nano-dot and pit arrays with a pitch of 25 nm x 25 nm fabricated by EB drawing, RIE and nano-imprinting toward 1 Tb/ in2 storage, 2nd international symposium on MONODZUKURI, 2009年
• Fabrication of dot arrays by EB lithography for quantum dot solar cell, 2nd international symposium on MONODZUKURI, 2009年
• Fine dot pattern formation on magnetic film for high density magnetic storage, 2nd international symposium on MONODZUKURI, 2009年
• Research on low power consumption and multi-level storage in phase-change memory, 2nd international symposium on MONODZUKURI, 2009年
• Low power lateral phase-change memory, 2nd international symposium on MONODZUKURI, 2009年
• Characterization of N-Doped Chalcogenide Film for Application to Phase-Change Memory as Next-Generation Memory, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010年
• Multi-level storage in phase-change memory: from multi-layer to single layer, The 22nd Symposium on Phase Change Optical Information Storage (PCOS2010), 2010年
• Long-range-ordering of nanodot arrays using self-assembled block copolymers with EB drawn guide post and line mixing templates, The 36th International Conference on Micro & Nano Engineering (MNE), 2010年
• Multilevel storage in lateral phase-change memory by promotion of nanocrystallization, The 36th International Conference on Micro & Nano Engineering (MNE), 2010年
• Multi-levels phase change memory using pulse modulation, EPCOS 2010, 2010年
• Step-in mode NC-AFM for CD measurement of fine structure in air, The 13th International Conference on Non-Contact Atomic Force Microscopy, 2010年
• Measurement of Local Stress Distribution in Fine Silicon Gate Using Illumination-Collection Mode Scanning Near-Field Optical Microscopy and Raman Spectroscopy, The 7h International Forum on Advanced Material Science and Technology, 2010年
• Ultramultiple-multi-level storage in SbTeN-based phase-change memory, The 7h International Forum on Advanced Material Science and Technology, 2010年
• Observation of Si pattern sidewall using inclination AFM for evaluation of line edge roughness, TBN 2008, 2008年
• ヒーター層付きラテラル型相変化メモリのジュール加熱シミュレーション, 第54回応用物理学会関連連合講演会, 2007年
• ヒーター層付きラテラル型相変化メモリ素子の繰り返し相変化実験, 第54回応用物理学会関連連合講演会, 2007年
• ラテラル型相変化抵抗素子における相変化繰り返し実験, 第53回応用物理学会関連連合講演会, 2006年
• UHV-AFMを用いた加熱前/後におけるGe2Sb2Te5薄膜の表面構造の観察, 第66回応用物理学会学術講演会, 2005年
• 相変化メモリトランジスタと結晶成長, 日本結晶成長学会 第34回結晶成長国内会議, 2004年
• 相変化チャンネルを用いたメモリトランジスタの可能性, シリコン材料・デバイス研究会「新型不揮発性メモリー」, 2004年
• ラテラル型窒素ドープSbTeによる多値記録マルチレイヤー相変化メモリ, 第68回応用物理学会学術講演会, 2007年
• ＲＲＡＭスイッチング動作に及ぼすジュール加熱の影響, 2008年春季 第55回応用物理学関係連合講演会, 2008年
• 低消費電力化のための上部ヒーター付ラテラル相変化素子, 2008年秋季 第69回応用物理学会学術講演会, 2008年
• 上部ヒータ付ラテラル型相変化メモリの多値記録, 2008年秋季 第69回応用物理学会学術講演会, 2008年
• In Situ SEM Observation of Grain Formation and Growth Induced by Electrical Pulses in Lateral Ge2Sb2Te5 Phase-Change Memory, 2007 MRS Spring Meeting, 2007年
• Scanning Near-field Raman spectroscopy (SNRS) to detect the stress distribution for high spatial resolution, 2nd international symposium on MONODZUKURI, 2009年
• Coercive force enhanced by nanaometer-sizing of magnetic column for patterned media and measured by X-ray magnetic circular dichroism in SR, the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), 2011年
• Electron Beam Lithography for 10-nm-Wide Nanowire Phase-Change Memory, 2011 MRS Spring Meeting, 2011年
• Diblock Copolymer Self-Assembled Nanodots for Next-Generation Magnetic Recording, the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), 2011年
• Estimation of Nanometer-Scale Patterning of Calixarene Resist in Electron Beam Lithography, the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), 2011年
• Formation of 13-nm-Pitch Block Copolymer Self-Assembled Nanodots Pattern for High-Density Magnetic Recording, The 4th Nanoscience and Nanosmposium, 2011年
• 10-nm-Order-Wide Nanowire Phase-Change Memory, the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), 2011年
• Ordering of 12 nm-pitched nanodot arrays using block copolymers self-assemble and EB drawn guide line template for 5 Tbit/in2 magnetic recording, the 38th International Micro & Nano Engineering Conference (MNE 2012), 2012年
• Controlled promotion of crystallization for multilevel phase-change memory, the 38th International Micro & Nano Engineering Conference (MNE 2012), 2012年
• Current-driven crystallization promotion for multilevel storage in phase-change memory, The 24th Symposium on Phase Change Oriented Science (PCOS 2012), 2012年
• Pattern Transfer of 23-nm-Diameter Block Copolymer Self- Assembled Nanodots Using CF4 etching with Carbon Hard Mask (CHM) as Mask, Nanotechnology Applications in Energy and Environment (NAEE2012), 2012年
• Fast Operation and Resistance Control in GeTe-Based Lateral Phase Change Memory, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012年
• Fusion of top-down and bottom-up technologies for single nano-patterning, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012年
• Fabrication of CoPt Nanodot Array with a Pitch of 33 nm Using Pattern-Transfer Technique of PS-PDMS Self-Assembly, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012年
• Fabrication of Carbon Nanodot Arrays with a Pitch of 20 nm for Pattern-Transfer of PDMS Self-Assembled nanodots, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012年
• Ordering of Self-Assembled Nanodots Improved by Guide Pattern with Low Line Edge Roughness for 5 Tbit/in.2 Patterned Media, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012年
• A New Modeling of Calculating Resist Profile Based on Energy Deposition Distribution in Electron Beam Lithography, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012年
• Controlled Crystallization Process of Phase-change Memory device by a Separate Heater Structure, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012年
• Fabrication of 25-nm-Pitched CoPt Magnetic Dot Arrays using 30-keV-Electron Beam Drawing, RIE and Ion milling, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012年
• Challenge to form the 10-nm-order pitch of self-assembled nanodots using PS-PDMS block copolymer, the Sixth International Conference on Advanced Materials and Nanotechnology (AMN6), 2013年
• Nanometer effect of dot diameter for 40 nm magnetic dot pitch for patterned media prepared by EBL and ion milling and measured by Micro X-Ray Magnetic Circular Dichroism, the Sixth International Conference on Advanced Materials and Nanotechnology (AMN6), 2013年
• Low-Volume-Change High-Crystallization-Temperature Phase-Change Material for High-Performance Phase-Change Memory by N-Doping into GeTe, 2013 MRS Spring Meeting, 2013年
• Fast Operation and Freely Achievable Multiple Resistance Levels in GeTe-Based Lateral Phase Change Memory, 2013 MRS Spring Meeting, 2013年
• Simulation of Fine Resist Profile Formation by Electron Beam Drawing and Development with Solubility Rate Based on Energy Deposition Distribution, 7th International Conference on Materials for Advanced Technologies (ICMAT), 2013年
• Long-range Ordering of 6-nm-sized Nanodot Arrays Using Self-assemble and Eb-drawing, 7th International Conference on Materials for Advanced Technologies (ICMAT), 2013年
• TiSiN Films by Reactive RF Magnetron Co-Sputtering for Ultra-Low-Current Phase-Change Memory, 5th International Conference on Mechanical and Electrical Technology (ICMET 2013), 2013年
• Evaluation of ordering of block copolymers with pre-patterned guides for bit patterned media, SPIE Advanced Lithography 2012, 2012年
• Multi-Level Storage Phase-Change Memory, 2012 International Conference on Mechatronics and Intelligent Materials, 2012年
• Coercive force enhanced by nanometer-sizing of magnetic column and measured by X-ray magnetic circular dichroism (XMCD), 2012 International Conference on Mechatronics and Intelligent Materials, 2012年
• Low-stress high-crystallization-temperature doped GeTe for improving performance of phase-change memory, the 38th International Micro & Nano Engineering Conference (MNE 2012), 2012年
• Fabrication of Ultrahigh Density 10-nm-order Sized C Nanodot Array as a Pattern-transfer Mask, 26th International Microprocesses and Nanotechnology Conference (MNC 2013), 2013年
• Ultralow-write-current Nano-contact Phase-change Memory, 26th International Microprocesses and Nanotechnology Conference (MNC 2013), 2013年
• Fabrication of Ultrahigh Density 10-nm-Order Sized Si Nanodot Array by Pattern-Transfer of Block Copolymer Self-Assembled Nanodots, 8th NANOSMAT, 2013年
• Large Area Ultrahigh Density 10-nm-Order Sized C Nanodot Array as a Pattern-Transfer Mask, the 39th International Micro & Nano Engineering Conference (MNE 2013), 2013年
• Staircase pulse programming for recrystallization control in phase-change memory, the 39th International Micro & Nano Engineering Conference (MNE 2013), 2013年
• Nano-contact phase-change memory for ultralow writing reset current, the 39th International Micro & Nano Engineering Conference (MNE 2013), 2013年
• Multi-level Storage in Lateral Multi-layer and Single Layer Phase-change Memory, 2011 MRS Spring Meeting, 2011年
• Piezoresistive Acceleration Sensor with High Sensitivity and High Responsiveness, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011年
• Long-range-ordering of Nanodot Arrays using Self-assembly and Post and Line Mixing Templates, The 4th Nanoscience and Nanosmposium, 2011年
• Nanometer-size effect of the coercive force of fine magnetic column measured by X-ray magnetic circular dichroism (XMCD), 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011年
• The Effect of Salt Development for Forming HSQ Resist Nanodot Arrays with a Pitch of 15 × 15 nm2 by 30-keV EB drawing, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011年
• Improved Observation Contrast of Blockcopolymer Nanodot Pattern Using Carbon Hard Mask (CHM), 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011年
• A Novel Phase-Change Memory with a Separate Heater Characterized by a Constant Resistance for Multilevel Storage, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011年
• Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011年
• Multi-Level Storage in Lateral Phase-Change Memory: from 3 to 16 Resistance Levels, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011年
• Random access multi-levels phase changing using pulse modulation, the 23rd Symposium on Phase Change Optical Information Storage (PCOS2011), 2011年
• 高密度パターンドメディアのための電子線描画ポスト格子とガイドラインによる自己組織化パターンの規則配列制御, 2010年秋季 第71回 応用物理学会学術講演会（長崎大学）, 2010年
• 高密度磁気記録のためのブロック共重合体による自己組織化10nmナノドット形成, 2010年秋季 第71回 応用物理学会学術講演会（長崎大学）, 2010年
• 30-KeV電子線描画法を用いた3 Tbit/in.2（ピッチ15 nm）超高密度磁気記録用ドット列の形成, 2011年秋季 第72回 応用物理学会学術講演会（山形大学）., 2011年
• Observation of Nanometer-Sized Magnetization of PtCo Magnetic Dot Arrays Using Scanning Near-Field Polarization Microscopy, the 40th International Micro & Nano Engineering Conference (MNE 2014), 2014年
• Single-nanodot Arrays and Single-nanohalf-pitch Lines Formed using PS-PDMS Self-assembly and Electron Beam Drawing, 26th International Microprocesses and Nanotechnology Conference (MNC 2013), 2013年
• Nano-contact for small power consumption in phase change memory, The 25th Symposium on Phase Change Oriented Science, 2013年
• Electron Beam Lithography for Fabrication of Nano Phase-Change Memory, 2013 2nd International Symposium on Quantum, Nano and Micro Technologies (ISQNM 2013), 2013年
• Scanning Near-field Polarization Microscopy for magnetization of nanometer-sized magnetic column, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013年
• Computational analysis of heavy ion-DNA interaction using molecular dynamics method, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013年
• Nano-contact phase-change memory, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013年
• Observation of magnetic nanodot arrays by using scanning near-field polarization microscope, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013年
• Fabrication of Ultrahigh Density 10-nm-Order Sized Si Nanodot Array by Pattern-Transfer of Block Copolymer Self-Assembled Nanodot Array, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013年
• Prototype of atomic force microscope with high resolution optical microscope for observing of magnetic nanodot arrays, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013年
• Long Range Ordering of Nanodots with Sub-10-nm-Pitch and 5-nm-dot Size using EB-drawn Guide Line and Self-assembly of Polystyrene-Poly(dimethyl siloxane), 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013年
• Reduction of Write Current in Phase-Change Memory by Incorporating Self-Assembled Nanostructures, the 23rd Australian Conference on Microscopy and Microanalysis (ACMM23) and the International Conference on Nanoscience and Nanotechnology (ICONN 2014), 2014年
• N-doped GeTe for High-Performance Phase-Change Memory, the 23rd Australian Conference on Microscopy and Microanalysis (ACMM23) and the International Conference on Nanoscience and Nanotechnology (ICONN 2014), 2014年
• Ultra-Multilevel-Storage Phase-Change Memory, 2014 International Conference on Materials Science and Engineering Technology (MSET 2014), 2014年
• Modification of GeTe Chalcogenide by N-doping for High-Performance Nonvolatile Phase-Change Memory, 3rd International Conference on Advanced Materials and Practical Nanotechnology (3rd ICAMPN), 2014年
• Observation of Nanometer-Sized Magnetic Dots and its Magnetization using a Scanning Near-Field Polarization Microscopy, 3rd International Conference on Advanced Materials and Practical Nanotechnology (3rd ICAMPN), 2014年
• Multilevel Storage and its Cycling in Ge1Sb4Te7 Phase-Change Memory, The International Conference on Solid State Devices and Materials (SSDM2014), 2014年
• Ultramultiple-level storage in Ge1Sb4Te7-based phase-change memory, the 40th International Micro & Nano Engineering Conference (MNE 2014), 2014年
• Ultrasmall-Volume-Change Chalcogenide for Performance Improvement of Phase-Change Memory, 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2014), 2014年
• Characterization of N-Doped GeTe Films and Their Applications to High-Performance Nano Phase-Change Memory, 27th International Microprocesses and Nanotechnology Conference (MNC 2014), 2014年
• Ge1Sb4Te7 Ultra-Multi-Level Phase-Change Memory, 27th International Microprocesses and Nanotechnology Conference (MNC 2014), 2014年
• Measurement of Magnetic Nanodot Arrays Using Scanning Near-Field Polarization Microscope, 27th International Microprocesses and Nanotechnology Conference (MNC 2014), 2014年
• N-doped GeTe Chalcogenide Film for High-Performance Nonvolatile Phase-Change Memory, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014年
• Low-Reset-Current Ring-Confined-Chalcogenide Phase-Change Memory, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014年
• Ge1Sb2Te4-based N-doped Chalcogenide for Application to Multi-Level-Storage Phase-Change Memory, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014年
• Magnetization of magnetic nanodots measured using a near-field polarization optical scanning microscope, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014年
• Thickness Dependence On Ordering Of Dots And Lines Along EB-drawn Guide Lines Using Self-assembly Of Polystyrene-Poly(dimethyl-siloxane), 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014年
• Magnetization Imaging of Magnetic Nanodot Using Scanning Near-field Polarization Microscopy Under External Magnetic Field, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014年
• Fabrication of Nanometer-sized Magnetic Dots and Their Magnetic Property, 8th International Conference on Materials for Advanced Technologies (ICMAT2015), 2015年
• Ultrahigh-density Multilevel-storage Nano Phase-change Memory Array, 8th International Conference on Materials for Advanced Technologies (ICMAT2015), 2015年
• Oxygen-Doped Sb2Te3 for Low-Power-Consumption Phase-Change Memory, 8th International Conference on Materials for Advanced Technologies (ICMAT2015), 2015年
• Localization of Joule Heating in Phase-Change Memory with Incorporated Insulating Nanostructures and Nanolayer for Ultralow Operation Current, the International Conference on Nanoscience and Technology, China 2015 (ChinaNANO 2015), 2015年
• Characterization of Ge1Sb4Te7 Chalcogenide for its Application to Synaptic Device, the International Conference on Nanoscience and Technology, China 2015 (ChinaNANO 2015), 2015年
• Ordering of either nano-dot arrays or nano-lines along EB-drawn resist guide lines using PS-PDMS self-assembly with a molecular weight of 1.46 kg/mol, the 41st International Micro & Nano Engineering Conference (MNE 2015), 2015年
• Properties of Ge1Sb4Te7 and its application to two terminal synaptic device, the 41st International Micro & Nano Engineering Conference (MNE 2015), 2015年
• Nano-contact phase-change memory with nanostructures and a highly-resistive thin layer, the 41st International Micro & Nano Engineering Conference (MNE 2015), 2015年
• Nanoscale Localized Joule Heating in Phase-Change Memory for Ultra-Low Operation Current, 28th International Microprocesses and Nanotechnology Conference (MNC 2015), 2015年
• Sub 10 ns Fast Switching and Resistance Control in Lateral GeTe-Based Phase-Change Memory, 28th International Microprocesses and Nanotechnology Conference (MNC 2015), 2015年
• Challenge to Control 5-nm-sized Dot Arrays with a Pitch of <10 nm in a Long-range Order along EB-drawn Guide Lines Using PS-PDMS Self-assembly, 28th International Microprocesses and Nanotechnology Conference (MNC 2015), 2015年
• LabVIEW-Controlled Scanning Near-Field Polarization Microscope, The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (11th RASEDA) and The 7th International Conference on Advanced Micro-Device Engineering (7th AMDE), 2015年
• Low Power Phase Change Memory via Block Copolymer Self-assembly Technology, 2013 MRS Spring Meeting, 2013年
• Proposal of memory transistor using a phase change and nano-size effects for high density memory array, Proc. 15th Symp. Phase Change Opt. Inform. Storage (Ed. M. Okuda), 2003年
• Pico-Newton Controlled Step-in Mode NC-AFM Using a Quadrature Demodulator and a Slim Probe in Air for CD-AFM, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010年
• Fabrication of Nanometer Sized Si Dot Arrays Using Reactive Ion Etching with Metal Dot Arrays, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010年
• Monte Carlo Simulation of Electron Scattering Processes for High-Resolution Electron Beam Lithography, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010年
• Guide Pattern Functionalization for Regularly Arranged PS-PDMS Self-Assembled Nanodot Pattern by Brush Processing, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010年
• Formation of 12-nm Nanodot Pattern by Diblock Copolymer Self-Assembly Technique, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010年
• Random-Access Multilevel Storage in Phase-Change Memory by Staircase-Like Pulse Programming, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010年
• Challenge to form 25x25 nm2 pitch dot on magnetic thin film on glass substrate for 1 Tb/in2 magnatic strage, 2nd International Workshop on Nanotechnology, 2009年
• Near-filed Raman spectroscopy using illumination-collection mode with typical AFM pyramidal probe, 2nd International Workshop on Nanotechnology, 2009年
• Multiple-Level Storage in N-doped-SbTe Phase-Change Memory with an Additional Top TiN Layer, 2nd International Workshop on Nanotechnology, 2009年
• Research activities on nanotechnology in Hosaka Lab, 2nd International Workshop on Nanotechnology, 2009年
• Small consumption power and multi-level storage in lateral type phase-change memory with a top heater, PCOS 2008, 2008年
• Fabrication of fine magnetic column arrays by 30 keV EB lithography and ion-milling, 34th International Conference on Micro- and Nano-Engineering 2008, 2008年
• Low power writing in lateral type phase-change memory, 2008 European/Phase Change and Ovonics Symposium, 2008年
• Multi-level-storage in lateral SbTeN-based phase-change memory with an additional top TiN layer, Extended Abstracts of the International Conference on Solid State Devices and Materials, 2008年
• 20 nm x 20 nm pitch fine dot arrays formed by 30 keV EB lithography and ion-milling, MRS International Materials Research Conference 2008, 2008年
• Formation of 20 nm x 20 nm fine pitch dot arrays by 30 keV EB lithography, The International MRS 2008 Conference Beijing AAA Satellite Meeting on Advanced Technologies for Advanced Characterizations of Advanced Materials, 2008年
• Reactively sputtered Ti-Si-N films for application to heating layer in low-current phase-change memory, MRS International Materials Research Conference 2008, 2008年
• Ultramultiple-level storage in N-doped-Sb2Te3 phase-change memory with an additional top TIN layer, The International MRS 2008 Conference Beijing AAA Satellite Meeting on Advanced Technologies for Advanced Characterizations of Advanced Materials, 2008年
• Nanometer scale studies of phase-change material using NC-AFM, XRD, and TEM, The 2nd Gunma International Symposium on Chemistry, 2007年
• Direct and indirect heating of low power lateral type PCMD, 1st Surface and Nano Science Workshop, 2007年
• Nano-dot arrays with a pitch of 25 nm x 25nm written by EB writer for over 1 Tb/in2 storage, 1st Surface and Nano Science Workshop, 2007年
• Characteristics of N-doped Sb2Te3 Films by X-Ray Diffraction and Resistance Measurement for Phase-Change Memory, 2007 MRS Spring Meeting, 2007年
• UHV NC-AFM Observation of Surface Structure and Grain Size Changes of Ge2Sb2Te5 Films by Annealing Effect, The 14th International Colloquium on Scanning Probe Microscopy, 2006年
• A Novel Multi-Channel Phase-Change Memory Cell for Multi-State Storage with High Controllability, 8th Intern. Conf. on Solid-State and Integrated Circuit Technology, 2006年
• Thickness Dependences of Phase Change and Channel Current Control in Phase-Change Channel Transistor, 2005 IEEE International Conference on Electron Devices and Solid-State Circuits, 2005年
• Annealing effect of phase change and current control in phase change channel transistor memory, 2005 Intern. Conf. Solid State Devices and Materials (SSDM 2005), 2005年
• Electric properties of thin GeSbTe and AgInSbTe films by annealing, 16th Symposium Phase Change Optical Information Storage PCOS 2004, 2004年
• Large Resistance Ratio for High Reliability of Multi-Level Storage in Phase-Change Memory, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009年
• Guide Pattern for Long-Range-Order Nanofabrication of Self-Assembled Block Copolymers, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009年
• Self-Assembled Nanodot Fabrication by Using Diblock Copolymer, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009年
• Fabrication of Si Dot Arrays by EB Lithography and Dry Etching for Quantum Dot Solar Cells, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009年
• Prototype of illumination-collection mode scanning near-field optical microscopy and Raman spectroscopy with aperture-less pyramidal probe, 1st International Conference on Advanced Micro-Device Engineering (AMDE), 2009年
• Material engineering in phase-change memory for low power consumption and multi-level storage, the 5th Interna-tional Conference on Electron Devices and Solid State Circuits, 2009年
• Multi-Level Storage in Lateral Phase-Change Memory, the International Conference on Nanoscience and Technology, China 2009 (ChinaNANO 2009), 2009年
• Nano magnetic column arrays fabrication for patterned media in magnetic recording using EB lithography and ion milling, the 5th Interna-tional Conference on Electron Devices and Solid State Circuits, 2009年
• Nano magnetic column arrays fabrication for patterned media in magnetic recording using EB lithography and ion milling, the International Conference on Nanoscience and Technology, China 2009 (ChinaNANO 2009), 2009年
• Research on low power consumption and multi-level storage in phase-change memory, the 2nd NSC-JST Nano Device Workshop, 2009年
• Challenge to form 25 × 25 nm2 pitch dot on magnetic thin film on glass substrate for 1Tb/in2 magnetic storage, 2nd International Workshop on Nanotechnology, 2009年
• Ultra low operation current lateral phase-change memory, the International Conference on Solid State Devices and Materials, 2006年
• Lateral type phase-change memory with top heater for low-power consumption, 2nd International Workshop on Nanotechnology, 2009年
• Nano-dot and pit arrays with a pitch of 25 nm x 25 nm fabricated by EB drawing, RIE and nano-imprinting toward 1 Tb/ in2 storage, 2nd international symposium on MONODZUKURI, 2009年
• Fabrication of dot arrays by EB lithography for quantum dot solar cell, 2nd international symposium on MONODZUKURI, 2009年
• Fine dot pattern formation on magnetic film for high density magnetic storage, 2nd international symposium on MONODZUKURI, 2009年
• Research on low power consumption and multi-level storage in phase-change memory, 2nd international symposium on MONODZUKURI, 2009年
• Low power lateral phase-change memory, 2nd international symposium on MONODZUKURI, 2009年
• Characterization of N-Doped Chalcogenide Film for Application to Phase-Change Memory as Next-Generation Memory, 2nd International Conference on Advanced Micro-Device Engineering (AMDE), 2010年
• Multi-level storage in phase-change memory: from multi-layer to single layer, The 22nd Symposium on Phase Change Optical Information Storage (PCOS2010), 2010年
• Long-range-ordering of nanodot arrays using self-assembled block copolymers with EB drawn guide post and line mixing templates, The 36th International Conference on Micro & Nano Engineering (MNE), 2010年
• Multilevel storage in lateral phase-change memory by promotion of nanocrystallization, The 36th International Conference on Micro & Nano Engineering (MNE), 2010年
• Multi-levels phase change memory using pulse modulation, EPCOS 2010, 2010年
• Step-in mode NC-AFM for CD measurement of fine structure in air, The 13th International Conference on Non-Contact Atomic Force Microscopy, 2010年
• Measurement of Local Stress Distribution in Fine Silicon Gate Using Illumination-Collection Mode Scanning Near-Field Optical Microscopy and Raman Spectroscopy, The 7h International Forum on Advanced Material Science and Technology, 2010年
• Ultramultiple-multi-level storage in SbTeN-based phase-change memory, The 7h International Forum on Advanced Material Science and Technology, 2010年
• Observation of Si pattern sidewall using inclination AFM for evaluation of line edge roughness, TBN 2008, 2008年
• In Situ SEM Observation of Grain Formation and Growth Induced by Electrical Pulses in Lateral Ge2Sb2Te5 Phase-Change Memory, 2007 MRS Spring Meeting, 2007年
• Scanning Near-field Raman spectroscopy (SNRS) to detect the stress distribution for high spatial resolution, 2nd international symposium on MONODZUKURI, 2009年
• Coercive force enhanced by nanaometer-sizing of magnetic column for patterned media and measured by X-ray magnetic circular dichroism in SR, the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), 2011年
• Electron Beam Lithography for 10-nm-Wide Nanowire Phase-Change Memory, 2011 MRS Spring Meeting, 2011年
• Diblock Copolymer Self-Assembled Nanodots for Next-Generation Magnetic Recording, the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), 2011年
• Estimation of Nanometer-Scale Patterning of Calixarene Resist in Electron Beam Lithography, the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), 2011年
• Formation of 13-nm-Pitch Block Copolymer Self-Assembled Nanodots Pattern for High-Density Magnetic Recording, The 4th Nanoscience and Nanosmposium, 2011年
• 10-nm-Order-Wide Nanowire Phase-Change Memory, the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), 2011年
• Ordering of 12 nm-pitched nanodot arrays using block copolymers self-assemble and EB drawn guide line template for 5 Tbit/in2 magnetic recording, the 38th International Micro & Nano Engineering Conference (MNE 2012), 2012年
• Controlled promotion of crystallization for multilevel phase-change memory, the 38th International Micro & Nano Engineering Conference (MNE 2012), 2012年
• Current-driven crystallization promotion for multilevel storage in phase-change memory, The 24th Symposium on Phase Change Oriented Science (PCOS 2012), 2012年
• Pattern Transfer of 23-nm-Diameter Block Copolymer Self- Assembled Nanodots Using CF4 etching with Carbon Hard Mask (CHM) as Mask, Nanotechnology Applications in Energy and Environment (NAEE2012), 2012年
• Fast Operation and Resistance Control in GeTe-Based Lateral Phase Change Memory, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012年
• Fusion of top-down and bottom-up technologies for single nano-patterning, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012年
• Fabrication of CoPt Nanodot Array with a Pitch of 33 nm Using Pattern-Transfer Technique of PS-PDMS Self-Assembly, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012年
• Fabrication of Carbon Nanodot Arrays with a Pitch of 20 nm for Pattern-Transfer of PDMS Self-Assembled nanodots, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012年
• Ordering of Self-Assembled Nanodots Improved by Guide Pattern with Low Line Edge Roughness for 5 Tbit/in.2 Patterned Media, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012年
• A New Modeling of Calculating Resist Profile Based on Energy Deposition Distribution in Electron Beam Lithography, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012年
• Controlled Crystallization Process of Phase-change Memory device by a Separate Heater Structure, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012年
• Fabrication of 25-nm-Pitched CoPt Magnetic Dot Arrays using 30-keV-Electron Beam Drawing, RIE and Ion milling, 4th International Conference on Advanced Micro-Device Engineering (AMDE), 2012年
• Challenge to form the 10-nm-order pitch of self-assembled nanodots using PS-PDMS block copolymer, the Sixth International Conference on Advanced Materials and Nanotechnology (AMN6), 2013年
• Nanometer effect of dot diameter for 40 nm magnetic dot pitch for patterned media prepared by EBL and ion milling and measured by Micro X-Ray Magnetic Circular Dichroism, the Sixth International Conference on Advanced Materials and Nanotechnology (AMN6), 2013年
• Low-Volume-Change High-Crystallization-Temperature Phase-Change Material for High-Performance Phase-Change Memory by N-Doping into GeTe, 2013 MRS Spring Meeting, 2013年
• Fast Operation and Freely Achievable Multiple Resistance Levels in GeTe-Based Lateral Phase Change Memory, 2013 MRS Spring Meeting, 2013年
• Simulation of Fine Resist Profile Formation by Electron Beam Drawing and Development with Solubility Rate Based on Energy Deposition Distribution, 7th International Conference on Materials for Advanced Technologies (ICMAT), 2013年
• Long-range Ordering of 6-nm-sized Nanodot Arrays Using Self-assemble and Eb-drawing, 7th International Conference on Materials for Advanced Technologies (ICMAT), 2013年
• TiSiN Films by Reactive RF Magnetron Co-Sputtering for Ultra-Low-Current Phase-Change Memory, 5th International Conference on Mechanical and Electrical Technology (ICMET 2013), 2013年
• Evaluation of ordering of block copolymers with pre-patterned guides for bit patterned media, SPIE Advanced Lithography 2012, 2012年
• Multi-Level Storage Phase-Change Memory, 2012 International Conference on Mechatronics and Intelligent Materials, 2012年
• Coercive force enhanced by nanometer-sizing of magnetic column and measured by X-ray magnetic circular dichroism (XMCD), 2012 International Conference on Mechatronics and Intelligent Materials, 2012年
• Low-stress high-crystallization-temperature doped GeTe for improving performance of phase-change memory, the 38th International Micro & Nano Engineering Conference (MNE 2012), 2012年
• Fabrication of Ultrahigh Density 10-nm-order Sized C Nanodot Array as a Pattern-transfer Mask, 26th International Microprocesses and Nanotechnology Conference (MNC 2013), 2013年
• Ultralow-write-current Nano-contact Phase-change Memory, 26th International Microprocesses and Nanotechnology Conference (MNC 2013), 2013年
• Fabrication of Ultrahigh Density 10-nm-Order Sized Si Nanodot Array by Pattern-Transfer of Block Copolymer Self-Assembled Nanodots, 8th NANOSMAT, 2013年
• Large Area Ultrahigh Density 10-nm-Order Sized C Nanodot Array as a Pattern-Transfer Mask, the 39th International Micro & Nano Engineering Conference (MNE 2013), 2013年
• Staircase pulse programming for recrystallization control in phase-change memory, the 39th International Micro & Nano Engineering Conference (MNE 2013), 2013年
• Nano-contact phase-change memory for ultralow writing reset current, the 39th International Micro & Nano Engineering Conference (MNE 2013), 2013年
• Multi-level Storage in Lateral Multi-layer and Single Layer Phase-change Memory, 2011 MRS Spring Meeting, 2011年
• Piezoresistive Acceleration Sensor with High Sensitivity and High Responsiveness, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011年
• Long-range-ordering of Nanodot Arrays using Self-assembly and Post and Line Mixing Templates, The 4th Nanoscience and Nanosmposium, 2011年
• Nanometer-size effect of the coercive force of fine magnetic column measured by X-ray magnetic circular dichroism (XMCD), 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011年
• The Effect of Salt Development for Forming HSQ Resist Nanodot Arrays with a Pitch of 15 × 15 nm2 by 30-keV EB drawing, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011年
• Improved Observation Contrast of Blockcopolymer Nanodot Pattern Using Carbon Hard Mask (CHM), 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011年
• A Novel Phase-Change Memory with a Separate Heater Characterized by a Constant Resistance for Multilevel Storage, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011年
• Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011年
• Multi-Level Storage in Lateral Phase-Change Memory: from 3 to 16 Resistance Levels, 3rd International Conference on Advanced Micro-Device Engineering (AMDE), 2011年
• Random access multi-levels phase changing using pulse modulation, the 23rd Symposium on Phase Change Optical Information Storage (PCOS2011), 2011年
• Observation of Nanometer-Sized Magnetization of PtCo Magnetic Dot Arrays Using Scanning Near-Field Polarization Microscopy, the 40th International Micro & Nano Engineering Conference (MNE 2014), 2014年
• Single-nanodot Arrays and Single-nanohalf-pitch Lines Formed using PS-PDMS Self-assembly and Electron Beam Drawing, 26th International Microprocesses and Nanotechnology Conference (MNC 2013), 2013年
• Nano-contact for small power consumption in phase change memory, The 25th Symposium on Phase Change Oriented Science, 2013年
• Electron Beam Lithography for Fabrication of Nano Phase-Change Memory, 2013 2nd International Symposium on Quantum, Nano and Micro Technologies (ISQNM 2013), 2013年
• Scanning Near-field Polarization Microscopy for magnetization of nanometer-sized magnetic column, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013年
• Computational analysis of heavy ion-DNA interaction using molecular dynamics method, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013年
• Nano-contact phase-change memory, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013年
• Observation of magnetic nanodot arrays by using scanning near-field polarization microscope, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013年
• Fabrication of Ultrahigh Density 10-nm-Order Sized Si Nanodot Array by Pattern-Transfer of Block Copolymer Self-Assembled Nanodot Array, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013年
• Prototype of atomic force microscope with high resolution optical microscope for observing of magnetic nanodot arrays, 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013年
• Long Range Ordering of Nanodots with Sub-10-nm-Pitch and 5-nm-dot Size using EB-drawn Guide Line and Self-assembly of Polystyrene-Poly(dimethyl siloxane), 5th International Conference on Advanced Micro-Device Engineering (AMDE), 2013年
• Reduction of Write Current in Phase-Change Memory by Incorporating Self-Assembled Nanostructures, the 23rd Australian Conference on Microscopy and Microanalysis (ACMM23) and the International Conference on Nanoscience and Nanotechnology (ICONN 2014), 2014年
• N-doped GeTe for High-Performance Phase-Change Memory, the 23rd Australian Conference on Microscopy and Microanalysis (ACMM23) and the International Conference on Nanoscience and Nanotechnology (ICONN 2014), 2014年
• Ultra-Multilevel-Storage Phase-Change Memory, 2014 International Conference on Materials Science and Engineering Technology (MSET 2014), 2014年
• Modification of GeTe Chalcogenide by N-doping for High-Performance Nonvolatile Phase-Change Memory, 3rd International Conference on Advanced Materials and Practical Nanotechnology (3rd ICAMPN), 2014年
• Observation of Nanometer-Sized Magnetic Dots and its Magnetization using a Scanning Near-Field Polarization Microscopy, 3rd International Conference on Advanced Materials and Practical Nanotechnology (3rd ICAMPN), 2014年
• Multilevel Storage and its Cycling in Ge1Sb4Te7 Phase-Change Memory, The International Conference on Solid State Devices and Materials (SSDM2014), 2014年
• Ultramultiple-level storage in Ge1Sb4Te7-based phase-change memory, the 40th International Micro & Nano Engineering Conference (MNE 2014), 2014年
• Ultrasmall-Volume-Change Chalcogenide for Performance Improvement of Phase-Change Memory, 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2014), 2014年
• Characterization of N-Doped GeTe Films and Their Applications to High-Performance Nano Phase-Change Memory, 27th International Microprocesses and Nanotechnology Conference (MNC 2014), 2014年
• Ge1Sb4Te7 Ultra-Multi-Level Phase-Change Memory, 27th International Microprocesses and Nanotechnology Conference (MNC 2014), 2014年
• Measurement of Magnetic Nanodot Arrays Using Scanning Near-Field Polarization Microscope, 27th International Microprocesses and Nanotechnology Conference (MNC 2014), 2014年
• N-doped GeTe Chalcogenide Film for High-Performance Nonvolatile Phase-Change Memory, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014年
• Low-Reset-Current Ring-Confined-Chalcogenide Phase-Change Memory, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014年
• Ge1Sb2Te4-based N-doped Chalcogenide for Application to Multi-Level-Storage Phase-Change Memory, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014年
• Magnetization of magnetic nanodots measured using a near-field polarization optical scanning microscope, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014年
• Thickness Dependence On Ordering Of Dots And Lines Along EB-drawn Guide Lines Using Self-assembly Of Polystyrene-Poly(dimethyl-siloxane), 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014年
• Magnetization Imaging of Magnetic Nanodot Using Scanning Near-field Polarization Microscopy Under External Magnetic Field, 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), 2014年
• Fabrication of Nanometer-sized Magnetic Dots and Their Magnetic Property, 8th International Conference on Materials for Advanced Technologies (ICMAT2015), 2015年
• Ultrahigh-density Multilevel-storage Nano Phase-change Memory Array, 8th International Conference on Materials for Advanced Technologies (ICMAT2015), 2015年
• Oxygen-Doped Sb2Te3 for Low-Power-Consumption Phase-Change Memory, 8th International Conference on Materials for Advanced Technologies (ICMAT2015), 2015年
• Localization of Joule Heating in Phase-Change Memory with Incorporated Insulating Nanostructures and Nanolayer for Ultralow Operation Current, the International Conference on Nanoscience and Technology, China 2015 (ChinaNANO 2015), 2015年
• Characterization of Ge1Sb4Te7 Chalcogenide for its Application to Synaptic Device, the International Conference on Nanoscience and Technology, China 2015 (ChinaNANO 2015), 2015年
• Ordering of either nano-dot arrays or nano-lines along EB-drawn resist guide lines using PS-PDMS self-assembly with a molecular weight of 1.46 kg/mol, the 41st International Micro & Nano Engineering Conference (MNE 2015), 2015年
• Properties of Ge1Sb4Te7 and its application to two terminal synaptic device, the 41st International Micro & Nano Engineering Conference (MNE 2015), 2015年
• Nano-contact phase-change memory with nanostructures and a highly-resistive thin layer, the 41st International Micro & Nano Engineering Conference (MNE 2015), 2015年
• Nanoscale Localized Joule Heating in Phase-Change Memory for Ultra-Low Operation Current, 28th International Microprocesses and Nanotechnology Conference (MNC 2015), 2015年
• Sub 10 ns Fast Switching and Resistance Control in Lateral GeTe-Based Phase-Change Memory, 28th International Microprocesses and Nanotechnology Conference (MNC 2015), 2015年
• Challenge to Control 5-nm-sized Dot Arrays with a Pitch of <10 nm in a Long-range Order along EB-drawn Guide Lines Using PS-PDMS Self-assembly, 28th International Microprocesses and Nanotechnology Conference (MNC 2015), 2015年
• LabVIEW-Controlled Scanning Near-Field Polarization Microscope, The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (11th RASEDA) and The 7th International Conference on Advanced Micro-Device Engineering (7th AMDE), 2015年
• Low Power Phase Change Memory via Block Copolymer Self-assembly Technology, 2013 MRS Spring Meeting, 2013年
• Proposal of memory transistor using a phase change and nano-size effects for high density memory array, Proc. 15th Symp. Phase Change Opt. Inform. Storage (Ed. M. Okuda), 2003年
• Proposal of a Novel Operation Method to Precisely Control Synaptic Strength for Phase-Change Artificial Synapse, Y. Yin, International Conference on Technology and Social Science 2020 (ICTSS2020), 2020年12月, 2020年12月
• Nanofabrication for Quantum Dot Solar Cell with High Conversion Efficiency, Y. Yin, International Conference on Technology and Social Science 2020 (ICTSS2020), 2020年12月, 2020年12月
• Vertical Stack MIM Diode Design for Optical Rectenna, T. Akahane; K. Yanagisawa; Y. Yin, 33rd International Microprocesses and Nanotechnology Conference (MNC 2020), 2020年10月, 2020年10月, 2020年10月
• Chalcogenides and their applications to advanced phase-change-devices toward future IoT era, Y. Yin; W. Matsuhashi; K. Niiyama; D. Nishijo; K. Sawao, 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2020), 2020年10月, 2020年10月
• C-N-Codoped Sb2Te3 Chalcogenidesfor Reducing Power Consumption of Phase-Change Devices, Y. Yin, 32nd International Microprocesses and Nanotechnology Conference (MNC 2019), 2019年10月, 2019年10月, 2019年10月
• Block-copolymer-based Nanostructure Fabrication and Its Application to Low-power Phase-change Memory, Y. Yin, 32nd International Microprocesses and Nanotechnology Conference (MNC 2019), 2019年10月, 2019年10月, 2019年10月
• Control of self-assembled nanodot array orientation using electron beam drawing, T. Akahane; Y. Yin, 4th International Conference on Advanced Engineering and Its Education in 2019 (4th ICAEE 2019), 2019年09月, 2019年09月
• N-Doped GeTe for Highly Reliable Phase-Change Device, S. Yahagi; Y. Yin, 11th International Science, Social Sciences, Engineering and Energy Conference (I-SEEC 2022) and 6th International Conference on Technology and Social Science 2022 (ICTSS 2022), 2022年12月
• Undoped and Doped Zn5Sb3Te Chalcogenides for Use in Phase-Change Device with High Thermal Stability, Y. Yin; T. Fujiwara; K. Niiyama; S. Yahagi, 11th International Science, Social Sciences, Engineering and Energy Conference (I-SEEC 2022) and 6th International Conference on Technology and Social Science 2022 (ICTSS 2022), 2022年12月
• MIM diode with HSQ insulating thin film for optical rectenna, T. Akahane; S. Ishii; K. Yanagisawa; Y. Yin, 35th International Microprocesses and Nanotechnology Conference (MNC 2022), 2022年11月
• N-Ti Codoped Zn5Sb3Te1 Chalcogenide for Artificial Synaptic Functional Material, T. Fujiwara; K. Niiyama; Y. Yin, 35th International Microprocesses and Nanotechnology Conference (MNC 2022), 2022年11月
• Recent Progress in Phase Change Materials and Devices, Y. Yin; K. Niiyama; T. Fujiwara; R. Shirakawa; S. Yahagi; M. Miuchi, 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2022), 2022年
• Doped Sb2Te3 Phase-Change Materials for High Performance Artificial Synaptic Device, Y. Yin; K. Niiyama; W. Matsuhashi; T. Fujiwara, International Conference on Technology and Social Science 2021 (ICTSS2021), 2021年12月
• Finite Element Analysis of Phase-Change Device with Incorporated Nanostructures for Lowering Writing Current, R. Shirakawa; Y. Yin, International Conference on Technology and Social Science 2021 (ICTSS2021), 2021年11月
• Structural analysis for lowering writing current of phase-change device with nanostructure by finite element method, R. Shirakawa; Y. Yin, The 4th International Conference on Memristive Materials, Devices & Systems (MEMRISYS), 2021年11月
• N-O co-doped Sb2Te3 chalcogenide memristive material, K. Niiyama; Y. Yin, The 4th International Conference on Memristive Materials, Devices & Systems (MEMRISYS), 2021年11月
• C-N-codoped Sb2Te3 chalcogenides for high-performance phase-change devices, Y. Yin, The 4th International Conference on Memristive Materials, Devices & Systems (MEMRISYS), 2021年11月
• Pulse programming method for phase-change artificial synapse, Y. Yin, The 4th International Conference on Memristive Materials, Devices & Systems (MEMRISYS), 2021年11月
• Chalcogenides for Their Application to Phase-Change-Memory-Based Synaptic Devices, Y. Yin; K. Niiyama; W. Matsuhashi; R. Shirakawa; T. Fujiwara; K. Sawao, 2021 IEEE 14th International Conference on ASIC (ASICON 2021), 2021年10月
• N-O Co-Doped Sb2Te3 Chalcogenide for High Performance Artificial Synaptic Device, Y. Yin; K. Niiyama; T. Fujiwara, 34th International Microprocesses and Nanotechnology Conference (MNC 2021), 2021年10月
• Ordered Nanodot Array Fabrication for Quantum Dot Solar Cell, Y. Yin; K. Yanagisawa; T. Akahane; R. Mayuzumi, 34th International Microprocesses and Nanotechnology Conference (MNC 2021), 2021年10月
• 太陽光発電素子のためのナノ加工技術に関する研究, 赤羽 隆志; 石井 翔; 尹 友, The 18th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, 2022年11月
• 熱安定性改善のためのZn5Sb3Te1にNとTiをコドープした新規相変化材料の開発, 藤原 貴生; 尹 友, The 18th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, 2022年11月
• 人工シナプス素子の高性能化に向けたN-OコドープSb2Te3相変化材料の開発, 新山 浩司; 尹 友, 2022年春季第69回 応用物理学会学術講演会, 2022年03月
• 局所的電流密度増強による相変化素子の低動作電流化, 白川 遼馬; 尹 友, The 18th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers, 2021年11月
• シナプス素子の高性能化に向けたN-OコドープSb2Te3新相変化材料の開発, 新山 浩司; 尹 友, The 18th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, 2021年11月
• TiOxナノ粒子を用いたフレキシブル抵抗センサの試作と機能実証, 茂木 勇成; 尹 友, The 18th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, 2021年11月
• Sb2Te3へのC-Nコドーピングによる相変化デバイス書き込み電流の削減”, 松橋 航; 尹 友, The 18th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers, 2021年11月
• ナノ構造を有する相変化素子の低動作電流化のための有限要素法解析, 白川 遼馬; 尹 友, 2021年秋季 第82回 応用物理学会学術講演会, 2021年09月
• MIMダイオード構造を備えた光レクテナの設計と電磁界シミュレーション, 栁澤 圭亮; 赤羽 隆志; 尹 友, The 17th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, 2020年11月
• 情報記録素子の高性能化のための相変化材料の開発, 尹 友, 技術開発と人材育成に関する交流会, 2020年01月
• Characterization of Doped Sb3Te and its Application to Phase-change Device, You Yin, 2025 IEEE the 14th International Conference on Communications, Circuits, and Systems (ICCCAS 2025), 2025年05月
• 光レクテナのためのスピンコート法を用いたMIMダイオードの作製, 石井 翔; 栁澤 圭亮; 赤羽 隆志; 尹 友, 2025年第72回応用物理学会春季学術講演会, 2025年03月
• OドープGeTe/Sb2Te3多層膜相変化材料の開発, 美内 睦美; 松田 和希; 吉本 匠汰; 澤井 英志; 尹 友, 2025年第72回応用物理学会春季学術講演会, 2025年03月
• 相変化デバイス高性能化のためのNドープによるSb3Te相変化材料の熱安定性向上, 吉本 匠汰; 矢矧 俊祐; 美内 睦美; 尹 友, 2025年第72回応用物理学会春季学術講演会, 2025年03月
• Vacancy-introduced GeTe/Sb2Te3 superlattice material, E. Sawai; M. Miuchi; Y. Yin, International Conference on Technology and Social Science 2024 (ICTSS2024), 2024年12月
• ZrOx and HfOx Thin films and Their Application to ReRAM Devices, T. Miyata; R. Harakawa; Y. Yin, International Conference on Technology and Social Science 2024 (ICTSS2024), 2024年12月
• OドープGeTe/Sb2Te3多層膜の特性評価とそのデバイスへの応用, 美内 睦美; 松田 和希; 澤井 英志; 吉本 匠汰; 尹 友, The 21st IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, 2024年11月
• 人工シナプスの高性能化のためのNドープによるSb3Te相変化材料の熱安定性の向上, 吉本 匠汰; 矢矧 俊祐; 美内 睦美; 尹 友, The 21st IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, 2024年11月
• 第一原理計算による空孔導入Sb2Te3/GeTe超格子材料の検討, 澤井 英志; 美内 睦美; 尹 友, The 21st IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, 2024年11月
• PS-PDMSブロックコポリマーの自己組織化法によるナノ構造形成と評価, 廣田 優希; 桑原 憂也; 初谷 真隆; 尹 友, The 21st IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, 2024年11月
• 高性能化を目指したHfOx薄膜評価とHfO2を用いたReRAMの開発, 宮田 大暉; 原川 来比登; 尹 友, The 21st IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, 2024年11月
• 反応性スパッタリングによるZrOx薄膜作製とそのReRAMへの応用, 宮田 大暉; 原川 来比登; 尹 友, The 21st IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, 2024年11月
• Doped Sb3Te for High-Performance Phase-Change Device, Y. Yin; S. Yoshimoto; S. Fukuda; S. Yahagi; M. Miuchi, The 36th Symposium on Phase Change Oriented Science (PCOS202４), 2024年11月
• O-Doped GeTe/Sb2Te3 Multi-Layer Phase-Change Materials, M. Miuchi; K. Matsuda; E. Sawai; S. Yoshimoto; Y. Yin, 37th International Microprocesses and Nanotechnology Conference (MNC 2024), 2024年11月
• N-Doped Sb3Te for High-Performance Phase-Change Device, S. Yoshimoto; S. Yahagi; M. Miuchi; Y. Yin, 37th International Microprocesses and Nanotechnology Conference (MNC 2024), 2024年11月
• Nanodot Formation on Si and Polyimide Using 28000-6000 g/mol Molecular Weight PS-PDMS Blockcopolymer, Y. Hirota; Y. Kuwabara; Y. Yin, 2024年11月
• Phase-Change Materials and their Applications, Y. Yin; M. Miuchi; S. Yahagi; E. Sawai; S. Yoshimoto; X. Dong; S. Fukuda; K. Matsuda, 2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2024), 2024年10月
• Effect of RESET operation of CiM with PCM on recognition accuracy, K. Yano; Y. Yin; K. Namba, IEEE International Conference on Consumer Electronics - Taiwan, 2024年07月
• High-Performance Chalcogenide-based Phase-Change Memory Technology, Y. Yin, 2024 IEEE the 13th International Conference on Communications, Circuits, and Systems (ICCCAS), 2024年05月
• 人工シナプス素子の高性能化に向けたNドープSb3Te相変化材料の開発, 吉本 匠汰; 尹 友, 2024年第71回応用物理学会春季学術講演会, 2024年03月
• N-O Doped Sb2Te3 Phase-Change Materials for High Performance Artificial Synaptic Device, Y. Yin; K. Niiyama, IAEAC 2024, 2024年03月
• Nanostructure Formation on Si and Polyimide by Using 47100-9000 g/mol Molecular Weight PS-PDMS Blockcopolymer, Y. Yin; Y. Kuwabara; Y. Hirota, ICTSS2023, 2023年12月
• Nanodot Formation on Si and Polyimide by Using PS-PDMS Blockcopolymer, Y. Kuwabara; Y. Hirota; S. Ishii; T. Akahane; Y. Yin, MNC 2023, 2023年11月
• O-Doped GeTe Chalcogenide for High-Performance Phase-Change Device, S. Yahagi; M. Miuchi; S. Yoshimoto; T. Miyata; T. Fujiwara; Y. Yin, MNC 2023, 2023年11月
• Cross Metal-Insulator-Metal Diode with Hydrogen Silsesquioxane Nanolayer, S. Ishii; T. Akahane; Y. Kuwabara; G. Lin; Y. Yin, MNC 2023, 2023年11月
• First-Principles Study of O-Doped GeTe/Sb2Te3 Superlattice, M. Miuchi; R. Shirakawa; E. Sawai; S. Yahagi; Y. Yin, MNC 2023, 2023年11月
• Doped Chalcogenides for High-Performance Phase Change Devices, Y. Yin; M. Miuchi; S. Yahagi; T. Fujiwara, ASICON 2023, 2023年10月
• PS-PDMSブロックコポリマーを用いたナノ構造の形成と評価, 桑原 憂也; 廣田 優希; 尹 友, The 20th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, 2023年10月
• 光レクテナのためのMIMダイオードの作製と評価, 石井 翔; 赤羽 隆志; 尹 友, The 20th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, 2023年10月
• 高信頼性に向けた酸素添加GeTe相変化薄膜の作製と評価, 矢矧 俊祐; 吉本 匠汰; 宮田 大暉; 美内 睦美; 尹 友, The 20th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, 2023年10月
• 第一原理計算による酸素添加GeTe/Sb2Te3超格子人工シナプス機能材料の研究, 美内 睦美; 白川 遼馬; 澤井 英志; 矢矧 俊祐; 尹 友, The 20th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers (IEEE TOWERS）, 2023年10月
• Doping O into Conventional GeTe/Sb2Te3 Superlattice for Functional Material of Artificial Synapse, M. Miuchi; E. Sawai; S Yahagi; Y. Yin, ICTSS2023

産業財産権

• 特許権, 近接場偏光顕微鏡, 尹 友, 特願PCT/JP2015/072930, 2015年08月13日
• 特許権, メモリ装置、電子機器、相変化メモリ素子への記録方法, 特願2008-115775, 2008年04月25日, 特開2009-266316
• 特許権, 加速度センサ, 特願2010-111424, 2010年05月13日, 特開2011-237390
• 特許権, メモリ素子、メモリセル、メモリセルアレイ及び電子機器, 特願2007-294887, 2007年11月13日, 特開2009-123847
• 特許権, メモリ素子、メモリセル、及びメモリセルアレイ, 特願2007-137813, 2007年05月24日, 特開2008-294207, 特許第5201616号
• 特許権, 近接場偏光顕微鏡, 尹 友, 特願2014-165037, 2014年08月13日
• 特許権, 光電変換素子及びその製造方法, 特願2011-184581, 2011年08月26日

受賞

• BEST STUDENT PRESENTATION AWARD, N-Doped GeTe for Highly Reliable Phase-Change Device, 11th International Science, Social Sciences, Engineering and Energy Conference (I-SEEC 2022) and 6th International Conference on Technology and Social Science 2022 (ICTSS 2022), 2022年12月
• BEST PRESENTATION AWARD, Undoped and Doped Zn5Sb3Te Chalcogenides for Use in Phase-Change Device with High Thermal Stability, 11th International Science, Social Sciences, Engineering and Energy Conference (I-SEEC 2022) and 6th International Conference on Technology and Social Science 2022 (ICTSS 2022), 2022年12月
• BEST STUDENT PAPER AWARD, Finite Element Analysis of Phase-Change Device with Incorporated Nanostructures for Lowering Writing Current, International Conference on Technology and Social Science 2021 (ICTSS2021), 2021年12月
• BEST PRESENTATION AWARD, Doped Sb2Te3 Phase-Change Materials for High Performance Artificial Synaptic Device, International Conference on Technology and Social Science 2021 (ICTSS2021), 2021年12月
• 最優秀学生論文賞, BEST STUDENT PAPER AWARD, K. Yanagisawa;T. Akahane;Y. Yin, K. Yanagisawa;T. Akahane;Y. Yin, Electromagnetic Analysis of Antenna Used for Optical Rectenna, Electromagnetic Analysis of Antenna Used for Optical Rectenna, ICTSS2020国際会議, ICTSS2020, 2020年12月
• 最優秀講演賞, BEST PRESENTATION AWARD, 尹友, You Yin, Nanofabrication for Quantum Dot Solar Cell with High Conversion Efficiency, Nanofabrication for Quantum Dot Solar Cell with High Conversion Efficiency, ICTSS2020国際会議, ICTSS2020, 2020年12月
• 最優秀論文賞, BEST PAPER AWARD, 尹友, You Yin, Proposal of a Novel Operation Method to Precisely Control Synaptic Strength for Phase-Change Artificial Synapse, Proposal of a Novel Operation Method to Precisely Control Synaptic Strength for Phase-Change Artificial Synapse, ICTSS2020国際会議, ICTSS2020, 2020年12月
• 第16回横山科学技術賞, 2012年10月
• 2012 YOKOYAMA AWARD IN SCIENCE AND TECHNOLOGY, 2012年
• BEST POSTER AWARD＜受賞率：20/890＞, 尹 友;板川 太一;保坂 純男, 10-nm-Order-Wide Nanowire Phase-Change Memory, ChinaNANO 2011, 2011年09月
• ICTSS2023 BEST PAPER AWARD, Y. Yin;Y. Kuwabara;Y. Hirota, Nanostructure Formation on Si and Polyimide by Using 47100-9000 g/mol Molecular Weight PS-PDMS Blockcopolymer, 2023年
• ICTSS2023 BEST STUDENT PAPER AWARD, M. Miuchi;E. Sawai;S Yahagi;Y. Yin, Doping O into Conventional GeTe/Sb2Te3 Superlattice for Functional Material of Artificial Synapse, 2023年
• 最優秀学生論文賞, BEST STUDENT PAPER AWARD, ZrOx and HfOx Thin films and Their Application to ReRAM Devices, 2024年
• 最優秀学生プレゼン賞, ICTSS2024 BEST STUDENT PRESENTATION AWARD, Vacancy-introduced GeTe/Sb2Te3 superlattice material, 2024年

共同研究・競争的資金等の研究課題

• ヒトの脳機能を遥かに超えるpsオーダーで動作可能な超格子相変化人工シナプスの研究, 科学研究費, 基盤研究（B）, 2021年04月, 2024年03月, 研究代表者
• IoT時代に向けた超低消費電力記録素子のための炭素含有新相変化材料の開発, 一般財団法人　新素材情報財団, 2019年04月
• 炭素含有新相変化材料を用いた人工知能素子の開発, 一般財団法人　新素材情報財団, 2020年04月
• ナノビット微細加工技術の検討, 保坂 純男, （株）東芝, 2009年04月, 2012年03月, 競争的資金
• 導光板の研究開発, 保坂 純男, （株）高崎モールディング, 共同研究, 2011年04月, 2012年03月, 競争的資金
• 電子線描画と自己組織化法を用いた微小量子ドット列形成, 保坂 純男, （株）トヨタ, 共同研究, 2010年04月, 2011年03月, 競争的資金
• 相変化薄膜素子の微結晶性と不揮発性多値記録特性に関する研究, 保坂 純男, STARC（半導体理工学研究センター）, 共同研究, 2005年, 2008年, 競争的資金
• 将来のAI×IoTの基盤となる情報記録と情報処理用先端材料に関する研究, 尹 友, JST, 日本・アジア青少年サイエンス交流事業(さくらサイエンスプラン) 共同研究活動コース, 2017年11月, 2018年03月, 研究代表者, 競争的資金
• ナノワイヤ相変化メモリにおける縮小化に関する研究, Research on nano wire phase-change memory, イン ユウ, YIN You, 日本学術振興会, Japan Society for the Promotion of Science, 科学研究費助成事業 若手研究(B), Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (B), 若手研究(B), Grant-in-Aid for Young Scientists (B), 群馬大学, Gunma University, 2009年, 2011年, 本研究では、エッチングとリフトオフを用いてナノワイヤ相変化メモリを作製し、評価した。また、超高密度低消費電力相変化メモリセルを開発するため,ブロックコポリマー自己組織化と2ステップエッチングにより相変化TiN/Ge2Sb2Te5(GST)/TiNナノ素子列(207Gbit/in2)を加工し,メモリの電気特性を評価した。1.8V, 100nsのパルスで100μAという低リセット電流でアモルファス化させることに成功した。, In this work, we fabricated the nanowire phase-change memories with two methods :(1)EBL using the positive resist ZEP-520A followed by phase-change material deposition and lift-off processes,(2)EBL using the negative resist hydrogen silsesquioxane(HSQ)followed by reactive ion etching(RIE)after phase-change material deposition. We also demonstrated the fabrication and phase change memory performance of a conical TiN/Ge2Sb2Te5(GST)/TiN nanoarray(aerial array density : 207 Gbit inch2)prepared via block copolymer lithography and straightforward two-step etching. This work provides a significant step for low power consumption and ultra-high density storage based on phase change materials, 21710135

  対象リソースIRI
• ヒトの脳機能を遥かに超えるpsオーダーで動作可能な超格子相変化人工シナプスの研究, Ultrafast Superlattice Phase-change Artificial Synapse, イン ユウ; 難波 一輝, 日本学術振興会, Japan Society for the Promotion of Science, 科学研究費助成事業, Grants-in-Aid for Scientific Research, 基盤研究(B), Grant-in-Aid for Scientific Research (B), 群馬大学, Gunma University, 2021年04月01日, 2024年03月31日, 従来の可逆な超高速相変化が観測されたGeTe/Sb2Te3超格子材料がシナプス機能材料として適していないと考えられる。そこで、本研究では、新しい結晶構造と機能の探索に広く使われている第一原理計算法を用い、異原子添加法により導電率が連続的に変えられる新材料を探求した。最初に、GeTe/Sb2Te3超格子材料の結晶構造モデルを作成した。計算によって最安定構造まで緩和させる後に、電子バンド構造を計算し、バンドギャップと結晶構造との関係を明らかにした。この結果に基づき、N等の進入型異原子を添加したGeTe/Sb2Te3超格子型多層膜の構造モデルを作成し、計算により電子バンド構造を求めた。これにより、添加異原子を決め、更に添加量を最適化し、シナプス機能材料としての超格子型多層膜を見出した。また、低コストで量産化に向いているスパッタリング法による高品質なGeTe/Sb2Te3多層膜の作製法が報告されている。そこで、本研究では、スパッタリング法により、第一原理計算で探求した新材料を作製した。N2が導入された超高真空中でGeTeとSb2Te3層を交互に積層し、基板上に多層材料を成膜した。N2流量制御により、適切な添加量を得ることができた。原子間力顕微鏡やX線回折装置等により作製した材料のラフネスと結晶性などを測定し、成膜挙動を解明した。また、結晶性と界面エネルギーが超格子材料の配向性を左右するので、以上の成膜挙動解明により成膜条件を最適化し、高品質な多層薄膜の作製法を確立した。, 21H01382

  対象リソースIRI
• 誤差許容計算における PCM 書き込み時間削減, Write latency reduction on PCM for approximate computing, 難波 一輝; イン ユウ, 日本学術振興会, Japan Society for the Promotion of Science, 科学研究費助成事業, Grants-in-Aid for Scientific Research, 基盤研究(C), Grant-in-Aid for Scientific Research (C), 千葉大学, Chiba University, 2020年04月01日, 2023年03月31日, 本研究の目的は新しいメモリシステムである PCM (phase-change memory; PRAM, 相変化メモリとも呼ばれる) について，その平均書き込み時間削減のための誤差許容を考慮した手法を検討することである。本年度は昨年度より引き続き，誤差許容が使われる有力な場面である人工知能関連技術についての検討を行った。具体的に，相変化メモリを用いた連想メモリについて，高集積化技術の1種である多値化技術について検討を行った．その結果，本研究の目的である速度向上については想定した結果は得られなかったものの，高集積化については一定の成果を得ている。具体的にビットあたりのトランジスタ数が従来の連想メモリを用いた設計における 9～10個と比べ，提案手法では6個と約 2/3 にまで削減している。また，シミュレータにより本システムが適切に動作することを確認している。 他にも関連研究として本研究より着想を得て，相変化メモリについてではないものの従来種のメモリシステムについて，低電力化技術の提案に成功している。具体的に不均一な情報の制御により，従来法より、ほぼ同等の誤差率で、40% 程度の消費電力削減に成功している。ただし，この手法は本研究の目的とは逆に，アクセス速度，特に読み出し速度を犠牲にした手法となっている。どちらの研究成果もすでに国内研究会で発表を行っており，一定の高評価を得ている。現在，論文投稿準備中である。, 20K11728

  対象リソースIRI

科学研究費の申請・獲得状況

• 基盤研究(B), ヒトの脳機能を遥かに超えるpsオーダーで動作可能な超格子相変化人工シナプスの研究, 新規, 2021年

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