Researcher Profile and Settings

Researcher

• Name

  GOTOH Tamihiro

Profile and Settings

• Name

  Gotoh, Tamihiro

Foreign language

• Use in presentation

  English

• Use in publication

  English

Affiliation

• Gunma University, Graduate School of Science and Technology, Associate Professor
• Gunma University, Graduate School of Science and Technology, Associate Professor

Education

• Apr. 1994, Mar. 1996, Gifu University, Graduate School of Engineering
• Apr. 1996, Sep. 1998, Gifu University, Graduate School of Engineering
• Apr. 1990, Mar. 1994, Gifu University, Faculty of Engineering
• 1994, Gifu University, Faculty of Engineering

Degree

• 条件付必須項目の入力がありません
• 条件付必須項目の入力がありません

Research Experience

• Oct. 1998, Apr. 2005, Hokkaido University, Research assistance
• Apr. 1998, Sep. 1998
• May 2005, Sep. 2020, Gunma University, Graduate School of Science and Technology, Associate professor, Associate prof lecturer lv
• 1998, 2005, Hokkaido University Research Associate
• Oct. 2020, 9999, Gunma University, Graduate School of Science and Technology, Professor, Prof lv

Research Activities

Research Areas

• Nanotechnology/Materials, Inorganic materials
• Nanotechnology/Materials, Applied materials
• Nanotechnology/Materials, Crystal engineering
• Nanotechnology/Materials, Applied physics - general

Research Interests

• chalcogenide materials
• phase change phenomena
• photothermal deflection spectroscopy
• amorphous semiconductors
• nano fractal structure
• amorphous semiconductorscanning probe microscopyphotothermal spectroscopy

Published Papers

• The role of arsenic in the operation of sulfur-based electrical threshold switches, Renjie Wu, Rongchuan Gu, Tamihiro Gotoh, Zihao Zhao, Yuting Sun, Shujing Jia, Xiangshui Miao, Stephen R. Elliott, Min Zhu, Ming Xu & Zhitang Song, 29 Sep. 2023, Nature Communications, 14, 6095, Scientific journal

  DOI
• Quantitative evaluation of low-concentration OH impurities in quartz glass by infrared photothermal deflection spectroscopy, Tamihiro Gotoh, Min Zhu, 21 Jul. 2023, Japanese Journal of Applied Physics, 62, 071004, Scientific journal

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• Screening Switching Materials with Low Leakage Current and High Thermal Stability for Neuromorphic Computing, Renjie Wu, Shujing Jia, Tamihiro Gotoh, Qing Luo, Zhitang Song, Min Zhu, 03 Apr. 2022, Advanced Electronic Materials, 2200150, 2200150(7)

  DOI
• 赤外光熱偏向分光法による相変化メモリ材料の局在準位評価, 後藤民浩, 15 Feb. 2022, SOLID STATE PHYSICS, 57, 2, 23, 30
• Elemental electrical switch enabling phase segregation–free operation, Jiabin Shen, Shujing Jia, Nannan Shi, Qingqin Ge, Tamihiro Gotoh, Shilong Lv, Qi Liu, Richard Dronskowski, Stephen R.Elliott, Zhitang Song, Min Zhu, 09 Dec. 2021, Science, 374, 6573, 1390, 1394

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• Ultrahigh drive current and large selectivity in GeS selector, Shujing Jia; Huanglong Li; Tamihiro Gotoh; Christophe Longeaud; Bin Zhang; Juan Lyu; Shilong Lv; Min Zhu; Zhitang Song; Qi Liu; John Robertson; Ming Liu, Sep. 2020, Nature Communications, 11, 4636, 4636(9), Scientific journal

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• Effect of heat treatments on the electronic properties of indium sulfide films, Tamihiro Gotoh, Apr. 2020, Eur. Phys. J. Appl. Phys., 89

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• Defect absorption in selenium films by photothermal deflection spectroscopy, Tamihiro Gotoh, Mar. 2020, Eur. Phys. J. Appl. Phys., 89, 10301

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• Defect Absorption in Ge2Sb2Te5 Phase-Change Films, Tamihiro Gotoh, Jan. 2020, Phys. Status Solidi B, 257, 1900278, Scientific journal

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• 自主性を育む物理実験の実践, 後藤 民浩; 高橋 浩; 平井 光博, 2019, 25, 38, Scientific journal

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• Copper Sulfide Dendrites Prepared by Sulfur Gas Heat Treatment of Copper, Tamihiro Gotoh, Dec. 2017, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 214, 12, 1700621, Scientific journal

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• Control of carrier concentration in SnS films by annealing with S and Sn, Tamihiro Gotoh, Jul. 2016, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 213, 7, 1869, 1872, Scientific journal

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• Effect of annealing on carrier concentration in Ge2Sb2Te5 films, Tamihiro Gotoh, Jul. 2014, CANADIAN JOURNAL OF PHYSICS, 92, 44385.0, 681, 683, Scientific journal

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• Electrical Properties of SnS Films Deposited by Thermal Evaporation of Sulfurized Sn Powder, Tamihiro Gotoh; Kosuke Yazawa; Kento Imai, 2014, ADVANCED MICRO-DEVICE ENGINEERING IV, 596, 21, 25, International conference proceedings

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• 相変化材料の特性コントラストの起源, 後藤 民浩, 2014, 29, 1, 18, 22
• 光熱偏向分光法による相変化薄膜の評価, 後藤 民浩, 2014, 42, 96, 86, 88
• Electrical Properties of DC-sputtered Amorphous InGaZnO4 Films, Kenji Kaneda; Tamihiro Gotoh, 2013, ADVANCED MICRO-DEVICE ENGINEERING III, 534, 36, 39, International conference proceedings

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• Sub-gap absorption study of amorphous InGaZnO4 films by photothermal deflection spectroscopy, Tamihiro Gotoh; Kenji Kaneda, Sep. 2012, JOURNAL OF NON-CRYSTALLINE SOLIDS, 358, 17, 2450, 2452, Scientific journal

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• Sub-gap states in Ge2Sb2Te5 phase change films, Tamihiro Gotoh, Sep. 2012, JOURNAL OF NON-CRYSTALLINE SOLIDS, 358, 17, 2366, 2368, Scientific journal

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• Sub-gap absorption study of SnS films deposited by thermal evaporation of sulfurized Sn powder, Tamihiro Gotoh, 2012, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 12, 9, 12, 2407, 2410, International conference proceedings

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• Effect of Annealing on Sub-Gap Absorption in Amorphous InGaZnO(4) Films, T. Gotoh; K. Kawarai; H. Wakabayashi; K. Kaneda, 2011, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING I, 459, 19, 22, International conference proceedings

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• Improvement of Crystallization Rate in Post-Annealed Ge(2)Sb(2)Te(5) Films, Kenta Kawarai; Tamihiro Gotoh, 2011, SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING I, 459, 23, 26, International conference proceedings

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• The study of structural changes of amorphous Ge2Sb2Te5 films after annealing by optical absorption spectroscopy, Tamihiro Gotoh; Kenta Kawarai, Mar. 2010, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207, 3, 639, 641, Scientific journal

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• Nanoscale Characterization of Microcrystalline Silicon Solar Cells by Scanning Near-Field Optical Microscopy, Tamihiro Gotoh; Yoshiki Yamamoto; Zhenhua Shen; Shunsuke Ogawa; Norimitsu Yoshida; Takashi Itoh; Shuichi Nonomura, Sep. 2009, JAPANESE JOURNAL OF APPLIED PHYSICS, 48, 9, 91202, Scientific journal

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• Photothermal technique using individual cantilevers for quality monitoring in thin film devices, Tamihiro Gotoh, Jul. 2009, REVIEW OF SCIENTIFIC INSTRUMENTS, 80, 7, 074902-1, Scientific journal

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• Characteristics at high electric fields in amorphous Ge2Sb2Te5 films, Tamihiro Gotoh, May 2008, JOURNAL OF NON-CRYSTALLINE SOLIDS, 354, 19-25, 2728, 2731, Scientific journal

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• Localized oxidation influence from conductive atomic force microscope measurement on nano-scale I-V characterization of silicon thin film solar cells, Zhenhua Shen; Mototaka Eguchi; Tamihiro Gotoh; Norimitsu Yoshida; Takashi Roh; Shuichi Nonornura, Jan. 2008, THIN SOLID FILMS, 516, 5, 588, 592, Scientific journal

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• Study of nano-scale electrical properties of hydrogenated microcrystalline silicon solar cells by conductive atomic force microscope, Zhenhua Shen; Tamihiro Gotoh; Mototaka Eguchi; Norimitsu Yoshida; Takashi Itoh; Shuichi Nonomura, May 2007, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46, 5A, 2858, 2864, Scientific journal

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• いかに興味をもたせるか, 後藤 民浩, 2006, 大学の物理教育, 12, 150

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• Nano-scale phase changes in Ge-Sb-Te films with electrical scanning probe microscopes, K Tanaka; T Gotoh; K Sugawara, Dec. 2004, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 6, 4, 1133, 1140, Scientific journal
• Minimal phase-change marks produced in amorphous Ge2Sb2Te5 films, T Gotoh; K Sugawara; K Tanaka, Jun. 2004, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 43, 6B, L818, L821, Scientific journal

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• Nanoscale phase change in telluride films induced with scanning tunneling microscopes, K Sugawara; T Gotoh; K Tanaka, May 2004, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 43, 5B, L676, L679, Scientific journal

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• 相変化型DVD―その発展と将来―, 菅原 健太郎; 田中 啓司; 後藤 民浩, 2004, 73, 7, 910, 916

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• Scanning tunneling microscope modifications of amorphous Ge-Sb-Te films, K Sugawara; T Gotoh; K Tanaka, Oct. 2003, JOURNAL OF NON-CRYSTALLINE SOLIDS, 326, 37, 41, Scientific journal

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• Nanoscale electrical phase-change in GeSb2Te4 films with scanning probe microscopes, T Gotoh; K Sugawara; K Tanaka, Apr. 2002, JOURNAL OF NON-CRYSTALLINE SOLIDS, 299, 968, 972, Scientific journal

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• Chalcogenide-glass microlenses for optical fibers, A Saitoh; T Gotoh; K Tanaka, Apr. 2002, JOURNAL OF NON-CRYSTALLINE SOLIDS, 299, 983, 987, Scientific journal

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• Photothermal deflection spectroscopy of chalcogenide glasses, K Tanaka; T Gotoh; N Yoshida; S Nonomura, Jan. 2002, JOURNAL OF APPLIED PHYSICS, 91, 1, 125, 128, Scientific journal

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• Scanning tunneling microscope modifications of amorphous Ge-Sb-Te films, K Sugawara; T Gotoh; K Tanaka, 2002, XIIITH INTERNATIONAL SYMPOSIUM ON NON-OXIDE GLASSES AND NEW OPTICAL GLASSES PTS 1 AND 2, 398, 400, International conference proceedings
• Scanning tunneling nanolithography of amorphous GeSb2Te4 films, K Sugawara; T Gotoh; K Tanaka, Sep. 2001, APPLIED PHYSICS LETTERS, 79, 10, 1549, 1551, Scientific journal

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• Photoinduced surface deformations in ion-conducting Ag-As-S glasses. I. Isotropic deformations produced by small light spots, T Gotoh; K Tanaka, May 2001, JOURNAL OF APPLIED PHYSICS, 89, 9, 4697, 4702, Scientific journal

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• Photoinduced surface deformations in ion-conducting Ag-As-S glasses. II. Anisotropic deformation produced by large light spots, T Gotoh; K Tanaka, May 2001, JOURNAL OF APPLIED PHYSICS, 89, 9, 4703, 4706, Scientific journal

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• Chalcogenide-glass microlenses attached to optical-fiber end surfaces, A Saitoh; T Gotoh; K Tanaka, Dec. 2000, OPTICS LETTERS, 25, 24, 1759, 1761, Scientific journal

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• The light-induced metastable lattice expansion in hydrogenated amorphous silicon, S Nonomura; N Yoshida; T Gotoh; T Sakamoto; A Matsuda; S Nitta, May 2000, JOURNAL OF NON-CRYSTALLINE SOLIDS, 266, 474, 480, Scientific journal

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• A study on the correlation between the photoinduced volume expansion and the internal stress in hydrogenated amorphous silicon, T Sakamoto; N Yoshida; H Harada; T Kishida; S Nonomura; T Gotoh; M Kondo; A Matsuda; T Itoh; S Nitta, May 2000, JOURNAL OF NON-CRYSTALLINE SOLIDS, 266, 481, 485, Scientific journal

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• Photoinduced anisotropy in the ion-conducting amorphous semiconductor Ag-As-S, T Gotoh; H Hayakawa; K Tanaka, May 2000, JOURNAL OF NON-CRYSTALLINE SOLIDS, 266, 944, 947, Scientific journal

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• Laser processing of convex structures in chalcogenide glasses, T Gotoh; K Tanaka, 2000, 1ST INTERNATIONAL SYMPOSIUM ON LASER PRECISION MICROFABRICATION, 4088, 351, 354, International conference proceedings

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• Anisotropic patterns formed in Ag-As-S ion-conducting amorphous semiconductor films by polarized light, K Tanaka; T Gotoh; H Hayakawa, Oct. 1999, APPLIED PHYSICS LETTERS, 75, 15, 2256, 2258, Scientific journal

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• レーザー光てこ−ベンディング法による薄膜半導体の光吸収係数とa-Si:H薄膜の光誘起体積変化の測定, 野々村修一; 後藤民浩; 西尾基; 坂元智成; 仁田昌二, 1999, 34, 6, 519, 525
• Photoinduced expansion in hydrogenated amorphous silicon, S Nonomura; T Gotoh; M Nishio; T Sakamoto; M Kondo; A Matsuda; S Nitta, 1999, AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999, 557, 337, 345, International conference proceedings

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• Photo-induced structure metastability and the Staebler and Wronski effect in a-Si : H, DX Han; T Gotoh; M Nishio; T Sakamoto; S Nonomura; S Nitta; Q Wang; E Iwaniczko; H Mahan, 1999, NCPV PHOTOVOLTAICS PROGRAM REVIEW, 462, 260, 265, International conference proceedings

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• 光熱ベンディング分光法, 後藤 民浩, 1999, 68, 10, 1162, 1163

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• Chalcogenide glasses: What is the future?, K. Tanaka; T. Gotoh, 1999, 51, 189, 196
• Temperature dependence of the optical-absorption edge in C-60 thin films, T Gotoh; S Nonomura; H Watanabe; S Nitta; DX Han, Oct. 1998, PHYSICAL REVIEW B, 58, 15, 10060, 10063, Scientific journal

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• Optical and electrical properties of nano-crystalline GaN thin films and their application for thin-film transistor, S Kobayashi; S Nonomura; K Ushikoshi; K Abe; M Nishio; H Furukawa; T Gotoh; S Nitta, Jun. 1998, JOURNAL OF CRYSTAL GROWTH, 189, 749, 752, Scientific journal

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• Experimental evidence of photoinduced expansion in hydrogenated amorphous silicon using bending detected optical lever method, T Gotoh; S Nonomura; M Nishio; S Nitta; M Kondo; A Matsuda, Jun. 1998, APPLIED PHYSICS LETTERS, 72, 23, 2978, 2980, Scientific journal

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• Detection of photoinduced structural change in a-Si : H by bending effect, T Gotoh; S Nonomura; M Nishio; N Masui; S Nitta; M Kondo; A Matsuda, May 1998, JOURNAL OF NON-CRYSTALLINE SOLIDS, 227, 263, 266, Scientific journal

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• Photoluminescence study of nano-crystalline GaN and AlN grown by reactive sputtering, K Abe; S Nonomura; S Kobayashi; M Ohkubo; T Gotoh; M Nishio; S Nitta; S Okamoto; Y Kanemitsu, 1998, JOURNAL OF NON-CRYSTALLINE SOLIDS, 227, 1096, 1100, Scientific journal

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• Correlation of stress with photo-degradation in hydrogenated amorphous silicon prepared by hot-wire CVD, DX Han; T Gotoh; M Nishio; T Sakamoto; S Nonomura; S Nitta; Q Wang; E Iwaniczko, 1998, THIN-FILMS - STRESSES AND MECHANICAL PROPERTIES VII, 505, 445, 450, International conference proceedings

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• Changes of infrared absorption by light soaking and thermal quenching in a-Si:H, T Gotoh; S Nonomura; S Hirata; N Masui; S Nitta, Dec. 1997, SOLAR ENERGY MATERIALS AND SOLAR CELLS, 49, 44200.0, 13, 18, Scientific journal

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• Photothermal bending spectroscopy and photothermal deflection spectroscopy of C-60 thin films, T Gotoh; S Nonomura; S Hirata; S Nitta, Apr. 1997, APPLIED SURFACE SCIENCE, 113, 278, 281, Scientific journal

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• Optical properties of amorphous indium nitride films and their electrochromic and photodarkening effects, M Ohkubo; S Nonomura; H Watanabe; T Gotoh; K Yamamoto; S Nitta, Apr. 1997, APPLIED SURFACE SCIENCE, 113, 476, 479, Scientific journal

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• Optical and electrical properties of amorphous and microcrystalline GaN films and their application to transparent TFT, S Kobayashi; S Nonomura; T Ohmori; K Abe; S Hirata; T Uno; T Gotoh; S Nitta; S Kobayashi, Apr. 1997, APPLIED SURFACE SCIENCE, 113, 480, 484, Scientific journal

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• Electrical and optical properties of nano-crystalline GaN and nano-crystalline GaN : H thin films, S Kobayashi; S Nonomura; K Abe; T Gotoh; S Hirata; S Nitta; Y Kanemitsu, 1997, AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 467, 373, 378, International conference proceedings

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• Photothermal bending spectroscopy: Bending effect of film/substrate by thermal expansion, T Gotoh; S Nonomura; S Hirata; S Nitta, Dec. 1996, PROGRESS IN NATURAL SCIENCE, 6, S34, S37, Scientific journal
• Radiative recombination quantum efficiencies of a-Si:H and C-60 films by photothermal deflection spectroscopy, S Nonomura; T Gotoh; M Kawade; S Nitta, Dec. 1996, PROGRESS IN NATURAL SCIENCE, 6, S18, S21, Scientific journal
• Photoconductive a-GaN prepared by reactive sputtering, S Nonomura; S Kobayashi; T Gotoh; S Hirata; T Ohmori; T Itoh; S Nitta; K Morigaki, May 1996, JOURNAL OF NON-CRYSTALLINE SOLIDS, 200, 174, 177, Scientific journal

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• 1996, 9TH INTERNATIONAL CONFERENCE ON PHOTOACOUSTIC AND PHOTOTHERMAL PHENOMENA, CONFERENCE DIGEST, 6, 333, 334, International conference proceedings
• 光熱偏向分光法, 野々村修一; 後藤民浩; 仁田昌二, 1994, 応用物理, 63, 10, 1043, 1044

  DOI

MISC

• 新しいガラスの魅力, 後藤民浩, 2007
• 古くて新しいガラス, 後藤民浩, 2005
• ナノスケール相変化記録～メモリーはどこまで高密度化できるか？～, 後藤民浩, 2005, 19
• 樹枝状硫化銅の作製〜フラクタルと新機能〜, 後藤民浩, 2018, 17, 4, 8
• Photothermal vibration spectroscopy: The bending effect of the film by thermal expansion, T Gotoh; S Nonomura; H Watanabe; S Nitta, 1996, 9TH INTERNATIONAL CONFERENCE ON PHOTOACOUSTIC AND PHOTOTHERMAL PHENOMENA, CONFERENCE DIGEST, 381, 382, Summary international conference

Books etc

• Andrei Andriesh Homage Book, K. Tanaka; T. Gotoh, INOE&INFM Publishing House, 1999

Presentations

• Localized levels of amorphous chalcogenide films evaluated by infrared photothermal deflection spectroscopy, Tamihiro Gotoh, PCOS2023, 17 Nov. 2023, Japan
• 赤外光熱偏向分光法によるGe2Sb2Te5薄膜のギャップ内準位評価, 後藤民浩, 第70回応用物理学会春季学術講演会, 16 Mar. 2023
• Sn-Se蒸着膜の光学的・電気的性質, 飯田碧、多胡秀斗、後藤民浩, 第84回応用物理学会秋季学術講演会, 23 Sep. 2023
• 光熱偏向分光法によるSb-Te薄膜のギャップ内準位評価, 後藤民浩、澤田航、飯田碧, 第84回応用物理学会秋季学術講演会, 23 Sep. 2023, 19 Sep. 2023, 23 Sep. 2023, Japanese
• 透過・反射分光法によるGe2Sb2Te5薄膜の屈折率評価, 後藤民浩, 第83回応用物理学会秋季学術講演会, 22 Sep. 2022
• 反射分光法によるアモルファスセレン薄膜の評価, 後藤 民浩, 2022年第69回応用物理学会春季学術講演会, 22 Mar. 2022
• Localized states of Ge2Sb2Te5 films evaluated by infrared photothermal deflection spectroscopy, Tamihiro Gotoh, PCOS2021, 18 Nov. 2021, 18 Nov. 2021, 18 Nov. 2021, English
• 光熱偏向分光法による熱処理セレン薄膜の評価, 後藤民浩, 第82回応用物理学会秋季学術講演会, 12 Sep. 2021
• アモルファスセレン薄膜の欠陥準位評価, 後藤 民浩; 黒岩 昌悟, 2020年第81回応用物理学会秋季学術講演会, 08 Sep. 2020
• Ge2Sb2Te5 薄膜のギャップ内準位とキャリア特性, 後藤 民浩, 2020年第67回応用物理学会春季学術講演会, 13 Mar. 2020
• セレン薄膜のサブギャップ光吸収ピーク, 後藤民浩, 第80回応用物理学会秋季学術講演会, 20 Sep. 2019
• Control of carrier density in indium sulfide films by heat treatment, T. Gotoh, 28th International Conference on Amorphous and Nanocrystalline Semiconductors, 06 Aug. 2019
• Optical properties of copper sulfide dendrites, T. Gotoh, 28th International Conference on Amorphous and Nanocrystalline Semiconductors, 06 Aug. 2019
• Photothermal deflection spectroscopy of selenium films, T. Gotoh, 28th International Conference on Amorphous and Nanocrystalline Semiconductors, 05 Aug. 2019
• 樹枝状硫化銅の光吸収スペクトル, 後藤民浩; 西川遼太郎, 第66回応用物理学会春季学術講演会, 10 Mar. 2019
• Ge2Sb2Te5薄膜の近赤外吸収, 後藤民浩, 第79回応用物理学会秋季学術講演会, 19 Sep. 2018
• 樹枝状硫化銅の作製, 後藤民浩; 廣瀬宏樹; 西川遼太郎, 第65回応用物理学会学術講演会, 20 Mar. 2018
• 熱処理による硫化インジウム薄膜のキャリア制御, 後藤民浩, 第78回秋季応用物理学会学術講演会, 08 Sep. 2017
• Se薄膜のサブギャップ光吸収スペクトル, 後藤民浩, 第64回応用物理学会学術講演会, 15 Mar. 2017
• 熱処理による硫化物半導体の特性制御, 後藤民浩, 平成28年度プロセス研究会講演会, 01 Oct. 2016
• 硫化インジウム薄膜のギャップ内準位評価, 後藤民浩, 第77回秋季応用物理学会学術講演会, 15 Sep. 2016
• SnS薄膜のキャリア濃度の制御, 後藤民浩, 第63回応用物理学会関係連合講演会, 22 Mar. 2016
• 相変化薄膜の特性コントラスト, 後藤民浩, 平成27年度プロセス研究会講演会, 17 Oct. 2015
• Effects of annealing on the carrier concentration of SnS films, T. Gotoh; K. Yazawa, 26th International Conference on Amorphous and Nanocrystalline Semiconductors, 14 Sep. 2015
• 硫化銅薄膜のギャップ内準位評価, 後藤民浩, 第62回応用物理学会関係連合講演会, 12 Mar. 2015
• 硫黄ガス熱処理によるSnS薄膜の特性変化, 矢澤広祐; 後藤民浩, 第62回応用物理学会関係連合講演会, 12 Mar. 2015
• 熱処理によるGe2Sb2Te5薄膜のキャリア濃度変化, 後藤民浩, 第61回応用物理学会関係連合講演会, 19 Mar. 2014
• Sub-gap states in In-S films deposited by thermal evaporation, T. Gotoh; K. Yazawa, 5th International Conference on Advanced Micro-Device Engineering, 19 Dec. 2013
• n型ワイドギャップIn-S薄膜の光吸収スペクトル, 後藤民浩; 今井健人; 矢澤広祐, 第74回秋季応用物理学会学術講演会, Sep. 2013
• Effect of annealing on carrier density in Ge2Sb2Te5 films, T. Gotoh, 25th International Conference on Amorphous and Nanocrystalline Semiconductors, 20 Aug. 2013
• SnS蒸着膜の電気伝導特性, 後藤民浩; 矢澤広祐; 今井健人, 第60回応用物理学会関係連合講演会, Mar. 2013
• Electrical Properties of SnS Films by Thermal Evaporation of Sulfurized Sn Powder, T. Gotoh; K. Yazawa; K. Imai, 4th International Conference on Advanced Micro-Device Engineering, 07 Dec. 2012
• SnS半導体薄膜の作製とギャップ内準位の評価, 後藤民浩, 高機能セラミック薄膜のプロセス研究会, Oct. 2012
• SnS蒸着膜のギャップ内準位評価, 後藤民浩, 第73回秋季応用物理学会学術講演会, Sep. 2012
• Sub-gap Absorption Study of SnS Films Deposited by Thermal Evaporation of Sulfurized Sn Powder, T. Gotoh, Fifth International Conference on Optical, Optoelectronic and Photonic Materials and Applications, 06 Jun. 2012
• Ge2Sb2Te5相変化薄膜の熱起電力特性, 後藤民浩; 金田健児, 第59回応用物理学会関係連合講演会, Mar. 2012
• 直流スパッタ法によるアモルファスInGaZnO4薄膜の作製と熱処理効果, 金田健児; 後藤民浩, 第59回応用物理学会関係連合講演会, Mar. 2012
• Electrical Properties of dc-sputtered Amorphous InGaZnO4 Films, K. Kaneda; T. Gotoh, 3rd International Conference on Advanced Micro-Device Engineering, 08 Dec. 2011
• 直流スパッタ法によるアモルファスInGaZnO4薄膜の作製と評価, 金田健児; 後藤民浩, 第3回薄膜太陽電池セミナー, Oct. 2011
• 光熱偏向分光法による相変化薄膜のギャップ内準位の評価, 後藤民浩, 高機能セラミック薄膜のプロセス研究会, Sep. 2011
• 光熱偏向分光法によるGe2Sb2Te5薄膜のギャップ内準位の評価, 後藤民浩, 第72回秋季応用物理学会学術講演会, Aug. 2011
• Sub-gap states in Ge2Sb2Te5 phase change films, T. Gotoh, 24th International Conference on Amorphous and Nanocrystalline Semiconductors, Aug. 2011
• Sub-gap absorption study of amorphous InGaZnO4 films by photothermal deflection spectroscopy, T. Gotoh; K. Kaneda, 24th International Conference on Amorphous and Nanocrystalline Semiconductors, Aug. 2011
• 直流スパッタ法によるアモルファスInGaZnO4薄膜の作製と熱処理効果, 金田健児; 柿沼匠; 笠原俊; 後藤民浩, 第58回応用物理学会関係連合講演会, Mar. 2011
• Ge2Sb2Te5薄膜のサブギャップ光吸収, 後藤民浩, 第58回応用物理学会関係連合講演会, Mar. 2011
• Photoconductive properties of dc sputtered amorphous InGaZnO4 films, K. Kaneda; T. Gotoh, 2nd International Conference on Advanced Micro-Device Engineering, Dec. 2010
• シリコン系薄膜太陽電池のナノスケール接合評価, 後藤民浩, 第2回薄膜太陽電池セミナー, Nov. 2010
• 薄膜シリコン太陽電池のナノスケール接合評価, 後藤民浩, 高機能セラミック薄膜のプロセス研究会, Nov. 2010
• 熱処理によるGe2Sb2Te5薄膜の構造変化III, 後藤民浩; 川原井健太, 第71回秋季応用物理学会学術講演会, Sep. 2010
• 熱処理によるGe2Sb2Te5薄膜の構造変化I, 川原井健太; 後藤民浩, 第57回応用物理学会関係連合講演会, Mar. 2010
• 熱処理によるGe2Sb2Te5薄膜の構造変化II, 後藤民浩; 川原井健太, 第57回応用物理学会関係連合講演会, Mar. 2010
• Ge2Sb2Te5薄膜の高速結晶化 ―熱処理効果―, 川原井健太; 後藤民浩, 群馬大学平成21年度ATEC第9回談話会, Jan. 2010
• 導電性プローブによるナノスケール相変化記録, 後藤民浩, 日本顕微鏡学会走査型プローブ顕微鏡分科会平成21年度研究会, 15 Dec. 2009
• Improvement of crystallization rate in post-annealed Ge2Sb2Te5 films, K. Kawarai; T. Gotoh, 1st International Conference on Advanced Micro-Device Engineering, Dec. 2009
• Sub-gap absorption in InGaZnO4 films, T. Gotoh; K. Kawarai; H. Wakabayashi; K. Kaneda, 1st International Conference on Advanced Micro-Device Engineering, Dec. 2009
• Ge2Sb2Te5薄膜の光吸収スペクトル, 後藤民浩, 高機能セラミック薄膜の創製と物性に関する研究会, Oct. 2009
• Optical properties of post-annealed Ge2Sb2Te5 films, T. Gotoh; K. Kawarai, European Phase Change and Ovonics Symposium, Sep. 2009
• Optical absorption study of structural changes of Ge2Sb2Te5 films after annealing, T. Gotoh; K. Kawarai, 23rd International conference on Amorphous and Nanocrystalline Semiconductors, Aug. 2009
• アモルファスGe2Sb2Te5薄膜の結晶化速度−熱処理効果−, 川原井健太; 後藤民浩, 第56回応用物理学会関係連合講演会, 31 Mar. 2009
• アモルファスGe2Sb2Te5薄膜の結晶化速度－熱処理効果－, 川原井健太; 後藤民浩, 第56回応用物理学会関係連合講演会, 19 Mar. 2009
• アモルファスGe2Sb2Te5薄膜の高電界現象, 後藤民浩; 川原井健太, 平成20年度ATEC研究成果報告会, 19 Mar. 2009
• Nanoscale crystallization in Ge2Sb2Te5 films using conductive AFM, T. Gotoh, Lab Visit: Discussion and Seminar at Utrecht University, 2009
• Nanoscale characterization of thin-film silicon solar cells, T. Gotoh, Lab Visit: Discussion and Seminar at RWTH Aachen University, 2009
• アモルファスGe2Sb2Te5薄膜の結晶化速度, 平成20年度ATEC研究成果報告会, 2009
• アモルファスGe2Sb2Te5薄膜の高電界現象のモデル, 後藤民浩, 第55回応用物理学会関係連合講演会, Mar. 2008
• Nano-area I-V characteristics in thin film solar cells, S. Nonomura; T. Gotoh; T. Itoh, 4th Workshop on the future direction of photovoltaics, Mar. 2008
• Nano-scale characterization of microcrystalline silicon solar cells by scanning nearfield optical microscopy, T. Gotoh; Y. Yamamoto; Z. Shen; S. Ogawa; N. Yoshida; T. Itoh; S. Nonomura, 17th International Photovoltaic Science and Engineering Conference, Dec. 2007
• 近接場光学顕微鏡によるSi系薄膜太陽電池のナノスケール接合評価, 山本 芳樹; 後藤 民浩; 市川 裕之; 川上 知宏; 小川 俊輔; 吉田 憲充; 野々村 修一, 第54回応用物理学会関係連合講演会, Sep. 2007
• Characteristics at high electric fields in amorphous Ge2Sb2Te5 films, T. Gotoh, 22nd International conference on Amorphous and Microcrystalline Semiconductors, Aug. 2007
• 近接場光学顕微鏡によるa-Si:H薄膜太陽電池のナノスケール発電評価, 山本芳樹; 後藤民浩; 沈振華; 小川俊輔; 吉田憲充; 野々村修一, 第54回応用物理学会関係連合講演会, Mar. 2007
• Localized oxidation influence of conductive atomic force microscope measurements on nano-scale I-V characterization of silicon thin film solar cells, Zhenhua Shen; M. Eguchi; T. Gotoh; N.Yoshida; T.Itoh; S. Nonomura, 4th International Conference on Hot-Wire CVD (Cat-CVD) Process, Oct. 2006
• Ge-Sb-Te薄膜の電気相変化過程, 後藤民浩, 高機能セラミック薄膜の創製と物性に関する研究会, Sep. 2006
• Ge2Sb2Te5薄膜の高電界現象, 後藤民浩, 応用物理学会, Mar. 2006
• ナノスケール電気相変化記録, 後藤民浩, 高機能セラミック薄膜の創製と物性に関する研究会, Nov. 2005
• 相変化メモリーの基礎, 後藤民浩, 第32回アモルファスセミナー, Nov. 2005
• Nano-scale I-V characterization of uc-Si:H solar cell by Conductive Atomic Force Microscope, Zhenhua Shen; M. Eguchi; S. Ogawa; T. Gotoh; K.Sato; T.Itoh; N.Yoshida; S. Nonomura, International Photovoltaic Science and Engineering Conference, Oct. 2005
• ナノスケール電気相変化記録, 後藤民浩, 高機能セラミック薄膜の創製と物性に関する研究会, Aug. 2005
• AFMによるGe2Sb2Te5結晶薄膜へのナノスケール電気相変化記録, 佐藤秀幸; 菅原健太郎; 後藤民浩; 田中啓司, 第52回応用物理学会関係連合講演会, Mar. 2005
• ナノスケール電気相変化, 後藤民浩, 第31回アモルファス物質の物性と応用セミナー, Nov. 2004
• STMとAFMによる電気相変化の特性比較, 菅原健太郎; 後藤民浩; 田中啓司, 第62回秋季応用物理学会学術講演会, Sep. 2004
• Nanoscale phase changes in Ge-Sb-Te films with AFM and STM, K. Tanaka; T. Gotoh; K. Sugawara, 6th Solid State Chemistry 2004, Sep. 2004
• 走査型プローブ顕微鏡によるナノスケール電気相変化記録, 後藤民浩; 菅原健太郎; 田中啓司, 第30回アモルファス物質の物性と応用セミナー, Dec. 2003
• STMによるGe2Sb2Te5アモルファス薄膜の表面変形, 菅原健太郎; 後藤民浩; 田中啓司, 第61回秋季応用物理学会学術講演会, Sep. 2003
• 電気相変化記録の微小極限サイズ, 後藤民浩; 菅原健太郎; 田中啓司, 第50回応用物理学会関係連合講演会, Mar. 2003
• Scanning tunneling microscope modifications of amorphous Ge-Sb-Te films, K. Sugawara; T. Gotoh; K. Tanaka, 13th International symposium on non-oxide glasses and new optical glasses, Sep. 2002
• 原子間力顕微鏡によるGeSb2Te4薄膜へのナノスケール電気相変化記録, 後藤民浩; 菅原健太郎; 田中啓司; 大石健司, 第62回応用物理学会学術講演会, Sep. 2001
• 相変化電気メモリー：STM, AFMタイプ, 後藤民浩, 第62回秋季応用物理学会学術講演会, Sep. 2001
• Nanoscale electrical phase-change in GeSb2Te4 films with scanning probe microscopes, T. Gotoh; K. Sugawara; K. Tanaka, 19th International conference on Amorphous and Microcrystalline Semiconductors, Aug. 2001
• Chalcogenides-glass microlenses for optical fibers, A. Saitoh; T. Gotoh; K. Tanaka, 20th International conference on Amorphous and Microcrystalline Semiconductors, Aug. 2001
• STMによるGeSb2Te4薄膜の微細加工, 菅原健太郎; 後藤民浩; 田中啓司; 大石健司, 第48回応用物理学会関係連合講演会, Mar. 2001
• 光ファイバー端面付着型As2S3マイクロレンズ, 斎藤全; 後藤民浩; 田中啓司, 第61回秋季応用物理学会学術講演会, Sep. 2000
• GeSb2Te4薄膜の微細加工(STM、AFM), 後藤民浩; 菅原健太郎; 佐々木政嗣; 田中啓司; 大石健司, 第61回応用物理学会学術講演会, Sep. 2000
• Ag-As-Sガラスの光誘起変形, 後藤民浩; 田中啓司, 第47回春季応用物理学関係連合講演会, Mar. 2000
• Laser processing of convex structures in chalcogenide glasses, T. Gotoh; K. Tanaka, The First International Symposium on Laser Precision Microfabrication, 2000
• Ag-As-Sガラスの巨大光膨張, 後藤民浩; 田中啓司, 第60回秋季応用物理学会学術講演会, Sep. 1999
• Photoinduced anisotropy in the ion-conducting amorphous semiconductor Ag-As-S, T. Gotoh; H. Hayakawa; K. Tanaka, 18th International conference on Amorphous and Microcrystalline Semiconductors, Aug. 1999
• A study on the correlation between the photoinduced volume expansion and the internal stress in hydrogenated amorphous silicon, T. Sakamoto; N. Yoshida; H. Harada; T. Kishida; S. Nonomura; T. Gotoh; M. Kondo; A. Matsuda; T. Itoh; S. Nitta, 19th International conference on Amorphous and Microcrystalline Semiconductors, Aug. 1999
• The light induced metastable lattice expansion in hydrogenated amorphous silicon, S. Nonomura; N. Yoshida; T. Gotoh; T. Sakamoto; M. Kondo; A. Matsuda; S. Nitta, 18th International conference on Amorphous and Microcrystalline Semiconductors, Aug. 1999
• Ag-As-Sガラスの光誘起異方性のメカニズム（1）, 早川秀樹; 後藤民浩; 田中啓司, 第46回春季応用物理学関係連合講演会, Mar. 1999
• Ag-As-Sガラスの光誘起異方性のメカニズム（2）, 後藤民浩; 早川秀樹; 田中啓司, 第47回春季応用物理学関係連合講演会, Mar. 1999
• Photoinduced expansion in hydrogenated amorphous silicon, S. Nonomura; T. Gotoh; M. Nishio; T. Sakamoto; S. Nitta, Materials Research Society Symposium, 1999
• a-Si:Hの光誘起体積変化-uc-Si:Hを含む水素希釈率依存性-, 後藤民浩; 近藤道雄; 西尾基; 青野祐美; 野々村修一; 伊藤貴司; 松田彰久; 仁田昌二, 第45回春季応用物理学関係連合講演会, Mar. 1998
• a-Si:Hの光誘起体積変化-?c-Si:Hを含む水素希釈率依存性-, 後藤民浩; 近藤道雄; 西尾基; 青野祐美; 野々村修一; 伊藤貴司; 松田彰久; 仁田昌二, 第45回春季応用物理学関係連合講演会, Mar. 1998
• Correlation of stress with photo-degradation in hydrogenerated amorphous silicon prepared by hot-wire CVD, Daxing Han; T. Gotoh; M. Nishio; S. Nonomura; S. Nitta; Q. Wang; E. Iwaniczko, Materials Research Society Symposium, 1998
• ベンディング法によるa-Si:Hの光誘起構造変化の評価, 後藤民浩; 西尾基; 野々村修一; 仁田昌二; 近藤道雄; 松田彰久, 第24回アモルファス物質の物性と応用セミナー, Nov. 1997
• 光熱ベンディング分光法によるa-Si:Hの光誘起構造変化の観察, 西尾基; 後藤民浩; 青野祐美; 桝井直継; 伊藤貴司; 野々村修一; 仁田昌二, 第58回秋季応用物理学会学術講演会, Oct. 1997
• ベンディング効果によるa-Si:Hの光誘起構造変化の評価, 後藤民浩; 近藤道雄; 西尾基; 青野祐美; 野々村修一; 伊藤貴司; 松田彰久; 仁田昌二, 第58回秋季応用物理学会学術講演会, Oct. 1997
• Sensitive detection of photoinduced structural change in a-Si:H by bending effect, T. Gotoh; S. Nonomura; M. Nishio; N. Masui; S. Nitta; M. Kondo; A. Matsuda, 17th International conference on Amorphous and Microcrystalline Semiconductors, Aug. 1997
• Photoluminescence study of nanocrystalline GaN and AlN by reactive sputtering, K. Abe; S. Nonomura; S. Okamoto; Y. Kanemitsu; S. Kobayashi; M. Ohkubo; T. Gotoh; M. Nishio; S. Nitta, 17th International conference on Amorphous and Microcrystalline Semiconductors, Aug. 1997
• 高次フラーレンの薄膜作製とその性質, 大森貴志; 渡辺英樹; 後藤民浩; 西尾基; 野々村修一; 伊藤貴司; 仁田昌二, 第13回フラーレン総合シンポジウム, Jul. 1997
• Localized states related to oxygen molecules intercalated into C70 films, H. Habuchi; D. Han; S. Nitta; T. Itoh; T. Gotoh; S. Nonomura, The 3rd International Workshop in Russia, Fullerenes and Atomic Clusters, Jun. 1997
• a-Si:Hの光誘起構造変化(1)-光熱ベンディング分光法による弾性率の変化-, 桝井直継; 後藤民浩; 近藤道雄; 野々村修一; 伊藤貴司; 岡本博明; 松田彰久; 仁田昌二, 第44回春季応用物理学関係連合講演会, Mar. 1997
• a-Si:Hの光誘起構造変化(2)-赤外光熱偏向分光法-, 後藤民浩; 平田聡; 桝井直継; 野々村修一; 伊藤貴司; 仁田昌二, 第44回春季応用物理学関係連合講演会, Mar. 1997
• Electrical and optical properties of nano-crystalline GaN and nano-crystalline GaN:H thin films, S. Kobayashi; S. Nonomura; K. Abe; T. Gotoh; S Hirata; S. Nitta; Y. Kanemitsu, Materials Research Society Symposium, Mar. 1997
• a-Si:Hの赤外吸収の観察(1)-赤外光熱ベンディング分光法の開発-, 後藤民浩; 平田聡; 桝井直継; 野々村修一; 伊藤貴司; 仁田昌二, 第57回秋季応用物理学会学術講演会, Sep. 1996
• a-Si:Hの赤外吸収の観察(2)-光照射と急速冷却効果-, 平田聡; 後藤民浩; 桝井直継; 野々村修一; 伊藤貴司; 仁田昌二, 第57回秋季応用物理学会学術講演会, Sep. 1996
• 高感度光熱振動分光法によるa-Si:Hの評価, 後藤民浩; 渡辺英樹; 野々村修一; 仁田昌二, 第43回春季応用物理学関係連合講演会, Mar. 1996
• Photothermal bending spectroscopy, T. Gotoh; S. Nonomura; S. Hirata; S. Nitta, 8th International conference on photoacoustic and photothermal phenomena, 1996
• Radiative recombination quantum efficiencies of a-Si:H and C60 films by photothermal deflection spectroscopy, S. Nonomura; T. Gotoh; M. Kawade; S. Nitta, 8th International conference on photoacoustic and photothermal phenomena, 1996
• Photothermal bending spectroscopy and photothermal deflection spectroscopy of C60 thin films, T. Gotoh; S. Nonomura; S. Hirata; S. Nitta, 8th International conference on solid film and surface, 1996
• Optical and electrical properties of amorphous and microcrystalline GaN films and their application to transparent TFT, S. Kobayashi; S. Nonomura; T. Ohmori; K. Abe; S. Hirata; T. Uno; T. Gotoh; S. Nitta, 9th International conference on solid film and surface, 1996
• Optical properties of amorphous indium nitride films and their electrochromic and photodarkening effects, M. Ohkubo; S. Nonomura; H. Watanabe; T. Gotoh; K. Yamamoto; S. Nitta, 10th International conference on solid film and surface, 1996
• Changes of infrared absorption by light soaking and thermal quenching in a-Si:H, T. Gotoh; S. Nonomura; N. Masui; S. Nitta, 9th International photovoltaic science and engineering conference, 1996
• アモルファスおよび微結晶GaN、InN薄膜の光学的性質, 後藤民浩; 小林智司; 大久保雅雄; 渡辺英樹; 平田聡; 野々村修一; 仁田昌二, 第7回日本MRS学術シンポジウム, Dec. 1995
• 光熱偏向分光法によるC60薄膜の輻射量子効率?の導出, 後藤民浩; 川出正也; 渡辺英樹; 野々村修一; 伊藤貴司; 仁田昌二, 第56回秋季応用物理学関係連合講演会, Aug. 1995
• 光熱偏向分光法および光透過法によるC60薄膜の光学吸収端の温度依存性, 後藤民浩; 川出正也; 渡辺英樹; 野々村修一; 伊藤貴司; 仁田昌二, 第9回フラーレン総合シンポジウム, Jul. 1995
• 低濃度B-doped a-Si:Hに対するPDSとCPM, 後藤民浩; 野々村修一; 伊藤貴司; 仁田昌二, 第42回春季応用物理学関係連合講演会, Mar. 1995
• C60薄膜における光学吸収端の温度依存性, 後藤民浩; 黒川崇; 守川正宏; 川出正也; 野々村修一; 伊藤貴司; 仁田昌二, 第42回春季応用物理学関係連合講演会, Mar. 1995
• a-Si:H薄膜における表面欠陥のPDSによる評価, 後藤民浩; 野々村修一; 伊藤貴司; 仁田昌二, 第55回秋季応用物理学関係連合講演会, Sep. 1994

Industrial Property Rights

• Patent right, 特願2008-50738, 2008

Awards

• ICANS26 Young Researcher Award, 2015
• 1997

Social Contribution

Social Contribution

• 日本学術振興会アモルファス・ナノ材料と応用 第147委員会　(Target:　Researchers)